K9DVGB8U5M vs K9HCG08U1M 比較
詳細並排比較 K9DVGB8U5M 由 Samsung Electronics 與 K9HCG08U1M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K9DVGB8U5M | K9HCG08U1M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NAND Flash | — |
| 組織 | [DATA_NEEDED: capacity organization] | 8G x 8 |
| 介面 | Asynchronous x8-bit I/O | — |
| 供應電壓 | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage] |
| 封裝 | [DATA_NEEDED: package type and dimensions] | TSOP-48 (PDSO48) |
| 安裝類型 | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | [DATA_NEEDED: read time] |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | [DATA_NEEDED: program time] |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| 工作溫度 | [DATA_NEEDED: temperature range] | -40C to +105C (TA) |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance] | — |
| Memory Technology | — | MLC NAND Flash |
| Total Capacity | — | 64 Gbit |
| 資料匯流排寬度 | — | 8 bit |
| 介面類型 | — | Asynchronous NAND (multiplexed address/data/command) |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |
| Ready/Busy Output | — | Yes (R/B#) |
| Die Technology | — | Samsung E-die (per datasheet family) |
| Full Ordering Code | — | K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 |