K9DVGB8U5M vs K9HCG08U1M Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K9DVGB8U5M sa pamamagitan ng Samsung Electronics at K9HCG08U1M sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K9DVGB8U5M K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M ✓ Nakahanda
Samsung Electronics
K9HCG08U1M K9HCG08U1M - 64Gb 8Gx8 MLC NAND Flash | Samsung | SSD Storage

K9HCG08U1M - 64Gb 8Gx8 MLC NAND Flash | Samsung | SSD Storage

K9HCG08U1M ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro K9DVGB8U5M K9HCG08U1M
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory NAND Flash —
Organisasyon [DATA_NEEDED: capacity organization] 8G x 8
Interface Asynchronous x8-bit I/O —
Volte ng Pagbibigay [DATA_NEEDED: VCC range] [DATA_NEEDED: supply voltage]
Packhaging [DATA_NEEDED: package type and dimensions] TSOP-48 (PDSO48)
Uri ng Pagpapasok Surface Mount Surface Mount
Page Size [DATA_NEEDED: main page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: erase block size] [DATA_NEEDED: block size]
Read Time (tR) [DATA_NEEDED: page read cycle time] [DATA_NEEDED: read time]
Program Time (tPROG) [DATA_NEEDED: page program time] [DATA_NEEDED: program time]
Erase Time (tBERS) [DATA_NEEDED: block erase time] —
Endurance [DATA_NEEDED: program/erase cycles] —
Data Retention [DATA_NEEDED: retention specification] —
Temperature na Operasyon [DATA_NEEDED: temperature range] -40C to +105C (TA)
Access Interface Signals CLE, ALE, WE, RE, CE, R/B, WP —
Bad Block Management Host-managed (controller ECC and bad-block table required) —
Tindminan RoHS [DATA_NEEDED: RoHS compliance] —
Memory Technology — MLC NAND Flash
Total Capacity — 64 Gbit
Width ng Data Bus — 8 bit
Uri ng Interface — Asynchronous NAND (multiplexed address/data/command)
Program/Erase Cycles — [DATA_NEEDED: endurance]
Ready/Busy Output — Yes (R/B#)
Die Technology — Samsung E-die (per datasheet family)
Full Ordering Code — K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita