LM358DT vs NCV2904DR2G 比較

詳細並排比較 LM358DT 由 STMicroelectronics 與 NCV2904DR2G 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

STMicroelectronics
LM358DT LM358DT - Dual Low Power Op Amp | STMicroelectronics | SOIC-8

LM358DT - Dual Low Power Op Amp | STMicroelectronics | SOIC-8

LM358DT ✓ 啟用中

規格比較

參數 LM358DT NCV2904DR2G
品牌 STMicroelectronics onsemi
類別 Amplifier ICs Amplifier ICs
生命週期狀態 啟用中 啟用中
單價 (USD) $0.05 —
Number of Channels 2 —
Supply Voltage (Single) 3 V to 32 V —
Supply Voltage (Split) ±1.5 V to ±16 V —
Quiescent Current (per Amp) 350 µA (typical) —
Input Offset Voltage 2 mV (typical) —
Input Bias Current 45 nA (typical) Low input bias current
Gain-Bandwidth Product 1.1 MHz —
Slew Rate 0.6 V/µs —
Common-Mode Rejection Ratio 85 dB (typical) —
Power Supply Rejection Ratio 100 dB (typical) —
Output Current 40 mA (source/sink) —
工作溫度範圍 0°C to +70°C [DATA_NEEDED: operating temperature range]
封裝 SOIC-8 (SO-8) SOIC-8 (Case 751, D suffix)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant [DATA_NEEDED: RoHS status]
Amplifier Type — General Purpose Operational Amplifier
Number of Circuits — 2
Supply Voltage (Single Supply) — 3.0 V to 26 V
Supply Voltage (Split Supply) — +/-1.5 V to +/-13 V
Common Mode Input Range — Extends to ground/VEE
Output — Short circuit protected
Input Stage — True differential input
Compensation — Internally compensated
ESD Protection — ESD clamps on inputs
Power Drain — Low power drain
Qualification — NCV automotive grade

資料表與資源

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