M29F800FB55N3F2 vs M29F160FB55N3F2 比較

詳細並排比較 M29F800FB55N3F2 由 Micron Technology 與 M29F160FB55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29F800FB55N3F2 M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 ✓ 啟用中
Micron Technology
M29F160FB55N3F2 M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 Obsolete

規格比較

參數 M29F800FB55N3F2 M29F160FB55N3F2
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 Obsolete
Memory Density 8389 kbits (8 Mbit) —
組織 1M x 8 / 512K x 16 1 Mword x 16 bits / 2 Mbyte x 8 bits
供應電壓 5 V 5 V
Access Time 55 ns 55 ns
介面類型 Parallel NOR —
Boot Block Architecture Bottom Boot Block Bottom Boot Block
Program/Erase Controller Embedded byte/word program algorithms Embedded byte/word program algorithms
工作溫度 -40C to +125C -40 to +125 C
Temperature Grade Automotive (AEC-Q100) —
Package Type 48-pin TSOP1 48-TSOP
Package Shape Rectangular (JESD designation TSOP1) —
Terminal Count 48 —
JESD-609 Termination Code e3 (lead-free) —
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel (T/R) —
RoHS 狀態 Compliant (lead-free terminations) Compliant (lead-free)
記憶體類型 — Parallel NOR Flash
Density — 16777 kbits (16 Mbit)
Number of Words — 1000 k
Bits per Word — 16 bits
介面 — Parallel
Termination Finish — Lead-free (F2 suffix)
Block Protection — Hardware boot block protection
Speed Grade (from MPN) — 55 (55 ns)

資料表與資源

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