MT25QL02GCBB8E12-0AUT vs W25H02JVTBIM 比較

詳細並排比較 MT25QL02GCBB8E12-0AUT 由 Micron Technology 與 W25H02JVTBIM 由 Winbond. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
MT25QL02GCBB8E12-0AUT MT25QL02GCBB8E12-0AUT - 2Gbit SPI NOR Flash 133MHz | Micron

MT25QL02GCBB8E12-0AUT - 2Gbit SPI NOR Flash 133MHz | Micron

MT25QL02GCBB8E12-0AUT ✓ 啟用中
Winbond
W25H02JVTBIM W25H02JVTBIM - 2Gb QSPI NOR Flash, 24-TFBGA | Winbond

W25H02JVTBIM - 2Gb QSPI NOR Flash, 24-TFBGA | Winbond

W25H02JVTBIM ✓ 啟用中

規格比較

參數 MT25QL02GCBB8E12-0AUT W25H02JVTBIM
品牌 Micron Technology Winbond
類別 Flash Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash, Serial (SPI) Serial NOR Flash
Memory Capacity 2 Gbit (256 MB) —
組織 256M x 8 —
介面 SPI, Dual SPI, Quad I/O SPI / Dual SPI / Quad SPI / QPI / DTR
最大時脈頻率 133 MHz —
供應電壓 2.7 V to 3.6 V —
Programming Voltage 3 V —
工作溫度 -40C to +125C -40C to +85C
封裝 24-T-PBGA (6x8 mm) 24-ball TFBGA (8x6 mm)
安裝類型 Surface Mount Surface Mount
Endurance 100000 write/erase cycles —
Qualification AEC-Q100 (automotive) —
功能特色 XIP, write enable latch, power-on reset, hardware/software write protection, absolute write protection, extended address access —
RoHS 狀態 Compliant Compliant
Marking Code RW340 —
Supply Voltage Class 3 V (MT25QL series) —
Access Protocol Support Standard/Dual-Output/Dual-I/O/Quad-Output/Quad-I/O SPI —
Density — 2 Gbit (256M x 8)
Maximum Clock Rate — 133 MHz
Equivalent Throughput (Quad DTR) — 416 MHz (50 MB/s)
Access Time — 7.5 ns
Supply Voltage (VCC) — 2.7 V to 3.6 V
Sector Size — 4 KB uniform
Block Size — 32 KB and 64 KB
Program/Erase Endurance — 100,000 cycles per sector
Data Retention — 20 years
無鹵素 — Yes
JEDEC Manufacturer ID — 0xEF (Winbond)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價