STW11NK90Z vs STW12NK95Z 比較
詳細並排比較 STW11NK90Z 由 STMicroelectronics 與 STW12NK95Z 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
STMicroelectronics
STW12NK95Z - 950V 10A Zener SuperMESH MOSFET | STMicroelectronics
STW12NK95Z ✓ 啟用中規格比較
| 參數 | STW11NK90Z | STW12NK95Z |
|---|---|---|
| 品牌 | STMicroelectronics | STMicroelectronics |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-Source Voltage (VDS) | 900 V | — |
| Continuous Drain Current (ID) at 25°C | 9.5 A | — |
| Continuous Drain Current (ID) at 100°C | 6 A | — |
| Pulsed Drain Current (IDM) | 38 A | — |
| Gate-Source Voltage (VGS) | ±30 V | — |
| On-Resistance (RDS(on)) | 0.85 ohm | — |
| Gate Threshold Voltage (VGS(th)) | 3 V to 5 V | — |
| Gate Charge (Qg) | 45 nC | — |
| Input Capacitance (Ciss) | 1900 pF | — |
| Output Capacitance (Coss) | 150 pF | — |
| Reverse Transfer Capacitance (Crss) | 20 pF | — |
| Maximum Power Dissipation (PD) | 250 W | — |
| Operating Junction Temperature (Tj) | -55°C to +150°C | — |
| 封裝 | TO-247 | TO-247-3 |
| 安裝類型 | Through Hole | Through Hole |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Polarity | — | N-Channel |
| Drain-Source Breakdown Voltage (Vdss) | — | 950 V |
| Continuous Drain Current (Id) at Tc | — | 10 A |
| On-Resistance (Rds on) Max | — | 0.90 ohm |
| On-Resistance (Rds on) Typ | — | 0.69 ohm |
| Power Dissipation (Pd) at Tc | — | 230 W |
| Technology | — | SuperMESH (Zener-protected PowerMESH) |
| Gate Protection | — | Zener-protected gate oxide |
| Avalanche Rating | — | 100% avalanche tested |
| dv/dt Capability | — | Extremely high [DATA_NEEDED: dv/dt value] |
| 工作溫度 | — | -55C to +150C (junction) |
| Gate Charge | — | Minimized [DATA_NEEDED: Qg typical value] |