W25H02JVTBIM vs MT25QL02GCBB8E12-0AUT 比較

詳細並排比較 W25H02JVTBIM 由 Winbond 與 MT25QL02GCBB8E12-0AUT 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Winbond
W25H02JVTBIM W25H02JVTBIM - 2Gb QSPI NOR Flash, 24-TFBGA | Winbond

W25H02JVTBIM - 2Gb QSPI NOR Flash, 24-TFBGA | Winbond

W25H02JVTBIM ✓ 啟用中
Micron Technology
MT25QL02GCBB8E12-0AUT MT25QL02GCBB8E12-0AUT - 2Gbit SPI NOR Flash 133MHz | Micron

MT25QL02GCBB8E12-0AUT - 2Gbit SPI NOR Flash 133MHz | Micron

MT25QL02GCBB8E12-0AUT ✓ 啟用中

規格比較

參數 W25H02JVTBIM MT25QL02GCBB8E12-0AUT
品牌 Winbond Micron Technology
類別 Memory ICs Flash
生命週期狀態 啟用中 啟用中
Density 2 Gbit (256M x 8) —
記憶體類型 Serial NOR Flash NOR Flash, Serial (SPI)
介面 SPI / Dual SPI / Quad SPI / QPI / DTR SPI, Dual SPI, Quad I/O
Maximum Clock Rate 133 MHz —
Equivalent Throughput (Quad DTR) 416 MHz (50 MB/s) —
Access Time 7.5 ns —
Supply Voltage (VCC) 2.7 V to 3.6 V —
Sector Size 4 KB uniform —
Block Size 32 KB and 64 KB —
Program/Erase Endurance 100,000 cycles per sector —
Data Retention 20 years —
封裝 24-ball TFBGA (8x6 mm) 24-T-PBGA (6x8 mm)
工作溫度 -40C to +85C -40C to +125C
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
無鹵素 Yes —
JEDEC Manufacturer ID 0xEF (Winbond) —
Memory Capacity — 2 Gbit (256 MB)
組織 — 256M x 8
最大時脈頻率 — 133 MHz
供應電壓 — 2.7 V to 3.6 V
Programming Voltage — 3 V
Endurance — 100000 write/erase cycles
Qualification — AEC-Q100 (automotive)
功能特色 — XIP, write enable latch, power-on reset, hardware/software write protection, absolute write protection, extended address access
Marking Code — RW340
Supply Voltage Class — 3 V (MT25QL series)
Access Protocol Support — Standard/Dual-Output/Dual-I/O/Quad-Output/Quad-I/O SPI

資料表與資源

瀏覽所有產品 建立 BOM 索取報價