BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
MPN: BSC100N10NSFGATMA1 ✓ פעילBSC100N10NSFGATMA1 סקירה
An N-channel power MOSFET is a voltage-driven semiconductor switch used to efficiently route or modulate current in power-conversion circuits; the OptiMOS family from Infineon belongs to the broader discrete MOSFET -> power semiconductor -> discrete component taxonomy. Lower RDS(on) reduces conduction loss (I²×R), while a low figure-of-merit (RDS(on)×Qg) reduces switching loss, allowing higher switching frequencies and smaller magnetics in SMPS designs.
Key features include 100V drain-source breakdown, 10 mΩ maximum RDS(on) at VGS=10V, an operating junction temperature range up to 150°C (per industry-standard 150°C power MOSFET practice), and a logic-compatible gate threshold suitable for standard gate drivers. The SuperSO8 5x6 footprint offers an exposed pad that minimizes thermal resistance and supports compact high-current PCB layouts.
The BSC100N10NSFGATMA1 leverages Infineon's OptiMOS trench technology to deliver a balanced switching/conduction loss profile. Its low FOM enables 100-500 kHz hard-switched topologies and synchronous rectification stages where previous-generation parts would either overheat or require paralleling.
Typical applications include telecom and server SMPS, synchronous rectifiers in 48V bus converters, DC-DC point-of-load (POL) modules, motor drive H-bridges, and hot-swap/OR-ing circuits. Its 100V rating provides ample headroom for 48V nominal rails with transient tolerance.
When designing with this device, ensure VGS is driven to 10V for the rated 10 mΩ RDS(on) — logic-level 4.5V drive will increase on-resistance and conduction loss. Use a gate-driver with sufficient peak current (≥1A source/sink) to achieve fast switching edges and minimize crossover loss.
This page synthesizes distributor pricing, drop-in same-package alternatives, parametric comparisons and design notes not collated in the manufacturer datasheet alone.
חלופות תחליף ישיר עבור BSC100N10NSFGATMA1 — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם BSC100N10NSFGATMA1 (אותו גורם צורה וטביעת רגל) — שונים ב Package, Technology, Operating Temperature Range, Part Number, Power Dissipation (Tc).
BSC090N10NS3GATMA1
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
BSC042NE7NS3GATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←BSC040N10NS5SCATMA1
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
BSC123N08NS3GATMA1
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←IAUC100N04S6L020ATMA1
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←BSC093N15NS5ATMA1
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←BSC100N10NSFGATMA1 דירוגים מרביים ומאפיינים חשמליים
| Manufacturer | Infineon Technologies |
| Series | OptiMOS |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID), Ta | 11.4 A |
| Continuous Drain Current (ID), Tc | 90 A |
| Power Dissipation (PD), Tc | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΩ |
| מארז | PG-TDSON-8-1 (SuperSO8 5x6) |
| סוג הרכבה | Surface Mount |
| טווח טמפרטורת פעולה | -55C to +150C (junction) |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) |
| סטטוס RoHS | Compliant |
תצורת פינים של BSC100N10NSFGATMA1
| פין 1 | G — Gate |
| פין 2 | S — Source |
| פין 3 | S — Source |
| פין 4 | S — Source |
| פין 5 | D — Drain |
| פין 6 | D — Drain |
| פין 7 | D — Drain |
| פין 8 | D — Drain |
אזור פעולה בטוח (estimated, based on PG-TDSON-8-1 100V class)
יישומים טיפוסיים
BSC100N10NSFGATMA1 מתאים עבור 6 יישוםs: 48V Telecom/Server SMPS Primary-Side Switch, Synchronous Rectifier in 48V→12V DC-DC Converters, DC-DC Point-of-Load (POL) Buck Stage, Motor Drive H-Bridge / Half-Bridge, Hot-Swap / OR-ing Circuit for Redundant 48V Rails, Solar Inverter / Photovoltaic Boost Stage.
48V Telecom/Server SMPS Primary-Side Switch
The BSC100N10NSFGATMA1 fits 48V nominal telecom and server SMPS primary-side switching where 100V VDS rating tolerates 80V transient excursions on the bus rail. Its 10 mΩ RDS(on) keeps conduction loss manageable at 20-40A load currents, while the low FOM (RDS(on)×Qg) enables 100-300 kHz switching frequencies that shrink magnetic size. Paired with a gate driver such as IRS2153D or IR2127S, it achieves >96% efficiency in 48V→12V LLC or hard-switched forward converters typical of distributed power architectures.
מומלץ
Synchronous Rectifier in 48V→12V DC-DC Converters
In 48V bus to 12V/24V POL converter synchronous rectification stages, the BSC100N10NSFGATMA1 replaces Schottky diodes to cut conduction loss. Its 100V rating covers the rectified 48V bus with substantial margin, and its low gate charge (Qg) enables fast switching transitions that minimize dead-time loss in the complementary pair. The SuperSO8 5x6 footprint with exposed thermal pad supports the high RMS currents typical of continuous-conduction-mode (CCM) synchronous rectification at 100-300 kHz switching frequency.
מומלץ
DC-DC Point-of-Load (POL) Buck Stage
For 24-48V input to 3-12V output buck POL modules, the BSC100N10NSFGATMA1 serves as the high-side or low-side switch. Its 100V VDS provides headroom for 48V telecom inputs with inductive ringing, while the 10 mΩ RDS(on) at 10V VGS drive keeps full-load efficiency above 95% at moderate switching frequencies. The SuperSO8 5x6 package's small footprint and exposed thermal pad allow compact POL designs that fit beneath BGA processors in server and networking equipment.
מומלץ
Motor Drive H-Bridge / Half-Bridge
In 24-48V brushless DC (BLDC) and stepper motor H-bridge stages, the BSC100N10NSFGATMA1 handles PWM switching up to 50 kHz with low crossover loss thanks to its low Qgd/Qgs ratio. Its 100V rating covers back-EMF spikes from 48V motors under hard braking, and the 90A pulsed current rating supports inrush transients during motor startup. The SuperSO8 5x6 footprint allows compact multi-axis motor driver PCB designs for industrial automation and robotics.
מומלץ
Hot-Swap / OR-ing Circuit for Redundant 48V Rails
In hot-swap and OR-ing circuits for redundant 48V server/telecom power feeds, the BSC100N10NSFGATMA1 acts as the load-switching element. Its 10 mΩ RDS(on) minimizes steady-state voltage drop and power dissipation in the always-on conduction path, while the 100V VDS rating handles inrush transients and back-feed from parallel supplies. The device's logic-level compatible gate threshold (when driven above 10V VGS) enables simple controller ICs such as the BTS500801TEAAUMA1 to manage turn-on/turn-off sequencing.
מומלץ
Solar Inverter / Photovoltaic Boost Stage
In photovoltaic solar inverter boost stages operating from 24-80V panel input, the BSC100N10NSFGATMA1's 100V VDS rating tolerates open-circuit panel voltage at cold-temperature extremes while its 10 mΩ RDS(on) minimizes conduction loss in continuous PWM operation. The low FOM enables 50-100 kHz switching frequencies that shrink inductor size, and the exposed thermal pad supports sustained current at elevated ambient temperatures typical of outdoor inverter enclosures. The part's -55°C to +150°C junction rating ensures reliability across outdoor thermal cycling.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור BSC100N10NSFGATMA1 — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | BSC090N10NS3GATMA1 | BSC042NE7NS3GATMA1 | BSC040N10NS5SCATMA1 | BSC123N08NS3GATMA1 | IAUC100N04S6L020ATMA1 | BSC093N15NS5ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 75 V | 100 V | 80 V | 40 V | 150 V |
| RDS(on) max at VGS=10V | 10 mΩ | 9 mΩ | 4.2 mΩ | 4 mΩ | 12.3 mΩ | 2 mΩ | 9.3 mΩ |
| Continuous Drain Current (Tc) | 90 A | 90 A | 100 A | 100 A | 90 A | 100 A | 90 A |
| Technology Generation | OptiMOS | OptiMOS | OptiMOS 3 | OptiMOS 5 | OptiMOS | OptiMOS | OptiMOS 5 |
| Param Match % | 100% | 90% | 80% | 90% | 80% | 70% | 70% |
מבדילים עיקריים
- Drop-in compatible with broader Infineon OptiMOS SuperSO8 5x6 family (לעומתBSC090N10NS3GATMA1)
- Higher VDS rating than competing OptiMOS 3 part (לעומתBSC042NE7NS3GATMA1)
- Established OptiMOS generation with proven OptiMOS 5 successor available (לעומתBSC040N10NS5SCATMA1)
הערות תכנון
Estimated: At ID=30A continuous and RDS(on)=10 mΩ, conduction loss is ~9W (I²×R). On a 4-layer PCB with 1 oz copper and ~25×25 mm top-layer copper pour under the PG-TDSON-8-1 thermal pad, the resulting θJA is approximately 50°C/W, yielding a junction temperature rise of ~75°C above a 50°C ambient. This places Tj near 125°C — acceptable but tight. For continuous operation above 30A, increase copper area to 1 square inch or use forced-air cooling to maintain a >50,000-hour MTBF.
Solder the exposed thermal pad (pins 5-8 drain) to a continuous PCB copper plane with minimum 6 thermal vias (0.3 mm drill, 1 mm pitch) to inner copper layers. Place the gate-drive loop (gate resistor → MOSFET gate → driver GND) area-minimized and away from the power loop to prevent dv/dt-induced false turn-on. Use a 10-100 Ω gate resistor to control switching edge rate and reduce ringing on the gate node.
Do not drive VGS with logic-level 3.3V or 5V — the BSC100N10NSFGATMA1 requires 10V VGS to achieve the rated 10 mΩ RDS(on); under-driving will multiply conduction loss 2-3× and risk thermal runaway. Add a TVS diode or snubber across drain-source if the application has repetitive avalanche stress above 80V. Verify that the chosen gate driver can source/sink ≥1A peak current to fully switch the gate charge within 20-50 ns.
מידע על תאימות
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified — not intended for automotive safety-critical applications.
