H5AN4G6NBJR-RDC - 4Gb DDR4 SDRAM 256Mx16 TFBGA-96 | SK hynix
Référence : H5AN4G6NBJR-RDC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.09 | $8,09 |
| 10 | $7.6 | $76,00 |
| 100 | $7.05 | $705,00 |
| 500 | $6.6 | $3 300,00 |
| 1 000 | $6.15 | $6 150,00 |
H5AN4G6NBJR-RDC Présentation
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory. Compared with DDR3, DDR4 lowers the operating voltage from 1.5V to 1.2V, increases the internal bank count, and adds features such as bank groups that raise effective data rates. In the system hierarchy, a DDR4 SDRAM sits under the DRAM class, under volatile semiconductor memory, and serves as the main system memory between the processor cache and non-volatile storage such as NAND flash.
Key features of the H5AN4G6NBJR family include fully synchronous operation referenced to both rising and falling edges of the clock, automatic and self-refresh modes, a data mask function, an asynchronous reset function, dynamic on-chip termination (ODT), ZQ calibration, write leveling, and CRC function support. These capabilities simplify controller interfacing and improve signal integrity at high data rates on multi-layer PCBs.
Architecturally, the device uses a CMOS core with bank-group organization and a double-data-rate I/O that transfers data on both clock edges. The -RDC speed grade suffix identifies the validated speed bin and operating conditions for this ordering code, while the BJR die and FBGA-96 package are shared across the family, enabling footprint-compatible density and organization options.
Typical applications include set-top boxes, smart TVs, network video recorders, industrial controllers, and consumer-grade main memory modules where 4Gb density in a x16 organization is preferred for simplified routing of a 16-bit data bus. The industrial -I temperature variants extend use into harsher environments.
When designing with this device, verify the speed grade against your memory controller timing table, follow SK hynix layout guidance for length-matched data lines, and implement ZQ calibration with the recommended precision reference resistor.
This page synthesizes distributor pricing tiers, same-package drop-in alternatives within the H5AN4G6NBJR/H5AN4G8NBJR families, and practical design notes not consolidated in the manufacturer datasheet.
Alternatives de remplacement direct pour H5AN4G6NBJR-RDC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN4G6NBJR-RDC (même facteur de forme et même empreinte) — différant par Package, Interface, RoHS Status, Organization, Supply Voltage (VDD).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN4G6NBJR-VKC
✅ Remplacement direct✓ En stock
$12.96 / unité
Voir la fiche technique →H5AN4G6NBJR-UHC
✅ Remplacement direct✓ En stock
$8.09 / unité
Voir la fiche technique →H5AN4G6NBJR-UHI
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H5AN4G6NBJR-PBC
✅ Remplacement direct✓ En stock
$6.6 / unité
Voir la fiche technique →H5AN4G8NBJR-RDC
✅ Remplacement direct✓ En stock
$2.95 / unité
Voir la fiche technique →H5AN4G8NBJR-VKC
✅ Remplacement direct✓ En stock
$2.4 / unité
Voir la fiche technique →H5AN4G6NBJR-RDC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 4 Gb |
| Organisation de la mémoire | 256M x 16 |
| Tension d'alimentation | 1.2 V |
| Interface | CMOS, fully synchronous |
| Package Code | TFBGA (FBGA-96) |
| Package Shape | Rectangular |
| Package Width | 7.5 mm |
| Number of Terminals | 96 |
| Type de montage | Surface Mount |
| Temperature Grade | OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet |
| Self Refresh | Auto / Self Refresh |
| Data Mask Function | Yes |
| Asynchronous Reset | Yes |
| On-Die Termination | Dynamic ODT |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| CRC Function | Yes |
| Lead-Free / Halogen-Free | Yes (per datasheet cover: Lead-Free & Halogen-Free) |
| Speed Grade | -RDC (see manufacturer datasheet for validated data-rate bin) |
Guide de configuration des broches du H5AN4G6NBJR-RDC 7.5 mm
Configuration des broches du H5AN4G6NBJR-RDC (boîtier 7.5 mm). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour H5AN4G6NBJR-RDC.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
H5AN4G6NBJR-RDC convient pour 6 applications: Set-Top Box Main Memory, Smart TV and Display Systems, Industrial Controllers and HMI, Network Video Recorders (NVR), Networking Equipment, IoT Gateways and Edge Computing.
Set-Top Box Main Memory
The H5AN4G6NBJR-RDC fits set-top box designs that require 512 MB of main memory in a single x16 device. Its 4Gb density and 256M x 16 organization let a 16-bit SoC memory controller attach one chip per 512 MB, minimizing BOM count and routing complexity. The 1.2V DDR4 interface reduces memory subsystem power versus DDR3, while dynamic ODT, ZQ calibration, and write leveling maintain signal integrity across the point-to-point link. Because the H5AN4G6NBJR family is explicitly targeted at consumer main-memory applications needing large density and high bandwidth, the -RDC speed bin typically covers the data rates used by mainstream STB SoCs. Designers should verify controller timing tables against the datasheet speed suffix and enable CRC-protected operation where supported.
Recommandé
Smart TV and Display Systems
Smart TV SoCs with integrated graphics benefit from the H5AN4G6NBJR-RDC bandwidth for frame buffers and application memory. A single x16 device supplies 512 MB, and two devices double bandwidth by interleaving on a 32-bit bus. DDR4 operation at 1.2V lowers memory power consumption compared with DDR3 at 1.5V, which matters for standby regulations and thermal design in thin display housings. Features such as asynchronous reset simplify power-sequencing control from the TV power management IC, and auto/self-refresh preserves frame-buffer contents during low-power states. The FBGA-96 package (7.5 mm wide rectangular body) suits dense main-board layouts near the SoC. Match the -RDC speed grade to the SoC memory controller and use the recommended 240-ohm ZQ reference resistor.
Recommandé
Industrial Controllers and HMI
For industrial programmable controllers and human-machine interface panels, the -I variants of the same die (H5AN4G6NBJR-UHI) are specified from -40C to +95C, and the identical FBGA-96 footprint lets one PCB design serve both consumer (-RDC) and industrial (-UHI) builds. The H5AN4G6NBJR-RDC itself serves cost-optimized industrial SKUs operating in controlled cabinets. Self-refresh and auto self-refresh protect state across power events, while the data mask function allows efficient byte-level writes during logging and visualization tasks. Its 512 MB per device capacity comfortably hosts embedded Linux runtimes used in modern HMI stacks. Designers should enable temperature-compensated self-refresh per the SK hynix datasheet and validate ZQ calibration over the full operating range.
Recommandé
Network Video Recorders (NVR)
Surveillance NVR platforms buffer multiple HD video streams simultaneously, and the H5AN4G6NBJR-RDC provides 512 MB per chip with double-data-rate bandwidth for frame staging before disk writes. Using x16 devices keeps the address/command bus short: two devices on a 32-bit bus deliver 1 GB with a single chip-select pair in many SoC topologies. The asynchronous reset input lets the system CPU reset the DRAM independently during watchdog recovery without a full power cycle, improving camera-stream recovery time. CRC support on DDR4 adds error detection on critical links in electrically noisy environments with many switching supplies. Verify the -RDC speed bin against the SoC controller and apply dynamic ODT settings recommended in the SK hynix consumer DDR4 datasheet.
Recommandé
Networking Equipment
Entry-level routers, switches, and CPE gateways use DDR4 DRAM for packet buffers and embedded Linux execution. The H5AN4G6NBJR-RDC in x16 organization suits single-CPU designs where a 16-bit bus balances bandwidth against PCB layer count; scaling to two devices yields a 32-bit bus with 1 GB. DDR4 bank-group architecture improves effective bandwidth for the small, random read/write patterns typical of packet forwarding. The 1.2V rail simplifies integration with common networking PMICs, and write leveling plus ZQ calibration ensure reliable operation on the four-to-six-layer boards typical of CPE hardware. For telecom temperature builds, the footprint-identical -UHI industrial variant can be substituted without layout changes. Confirm speed-grade compatibility with the network processor memory controller.
Recommandé
IoT Gateways and Edge Computing
IoT gateways aggregating sensor data and running local analytics require hundreds of megabytes of DRAM for containers and protocol stacks; the H5AN4G6NBJR-RDC delivers 512 MB per device at DDR4 efficiency. The fully synchronous DDR4 interface clocks data on both edges of the differential clock, providing bandwidth headroom for TLS session handling and edge inference preprocessing. Low 1.2V operation and self-refresh modes support always-on gateway duty cycles and low-power standby states between uplink intervals. The FBGA-96 surface-mount package reflows alongside the SoC and flash on standard SMT lines. Gateways exposed to wide ambient swings should select the industrial -UHI suffix of the same die, which shares the identical footprint, enabling one layout across consumer and industrial SKUs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN4G6NBJR-RDC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN4G6NBJR-VKC | H5AN4G6NBJR-UHC | H5AN4G6NBJR-UHI | H5AN4G8NBJR-RDC |
|---|---|---|---|---|---|
| Package | FBGA-96 (TFBGA) rectangular, 7.5 mm wide | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 512M x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Temperature Grade | Consumer (OTHER per listing) | Commercial/consumer | -40C to +95C feature listing | Industrial -40C to +95C | Consumer (same suffix class) |
| Speed Grade Suffix | -RDC | -VKC | -UHC | -UHI | -RDC |
| Key Features | Auto/self-refresh, DM, async reset, dynamic ODT, ZQ cal, write leveling, CRC | Same family feature set | Same family feature set | Same family feature set | Same family feature set (x8 I/O) |
Principaux différenciateurs
- Same die and footprint across all suffix variants (vs H5AN4G6NBJR-VKC)
- Industrial-temperature upgrade path without relayout (vs H5AN4G6NBJR-UHI)
- x16 organization reduces bus routing versus x8 (vs H5AN4G8NBJR-RDC)
Notes de conception
DDR4 transfers data on both clock edges, so route data lines length-matched within each byte lane and match address/command/control to the clock per SK hynix consumer DDR4 layout guidance. For the x16 H5AN4G6NBJR-RDC, keep the single-chip point-to-point topology short (ideally under 50 mm) and set dynamic ODT values from the controller output driver/ODT lookup table in the datasheet. Enable write leveling during bring-up to close write timing, and verify ZQ calibration with the specified precision reference resistor before production.
The H5AN4G6NBJR-RDC runs from a 1.2V DDR4 rail; separate VDD and VDDQ power islands with bulk capacitance (e.g., 47 uF per rail region) plus dense 0.1 uF decoupling along the FBGA-96 ball field. Estimated: at typical DDR4-2400 x16 idle currents, a single 4Gb device contributes on the order of 100-300 mW depending on utilization - budget the memory PMIC accordingly and confirm with the datasheet current tables (IDD0/IDD4R/IDD4W) for your speed bin, since the -RDC bin specifics are not published in the retrieved data.
Do not mix suffix variants without verifying speed-bin compatibility: -RDC, -VKC, -UHC, and -UHI share the die and FBGA-96 footprint but code different validated speed/temperature combinations, and a mismatch with the controller timing table causes marginal operation at temperature extremes. Also, the H5AN4G8NBJR x8 variants are same-package but change the data organization - swapping them onto an x16 board breaks the data bus. Confirm the asynchronous reset pin is driven from a controller GPIO and not left floating.
Informations de conformité
Datasheet cover states Lead-Free & Halogen-Free. RoHS compliance inferred from lead-free consumer DDR4 offering; request formal declarations from SK hynix.
