H5TC4G63CFR-xxI - 4Gb DDR3L SDRAM | SK Hynix
MPN： H5TC4G63CFR-xxI ✓ 啟用中H5TC4G63CFR-xxI 概覽
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that achieves high data transfer rates by transferring data on both edges of the clock signal. It operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. DDR3L is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems.
Key features include a 4Gb density organized as 512M x 8, a data rate of (e.g., 1600 Mbps), and support for 1.35V operation. The device uses an 8n-prefetch architecture, which enables high bandwidth by fetching 8 data words per clock cycle. It also supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop).
The H5TC4G63CFR-xxI is fabricated using advanced DRAM process technology, ensuring high reliability and low power consumption. The on-chip DLL synchronizes the output data with the clock, reducing skew and improving signal integrity. The device includes auto-refresh and self-refresh modes for low-power standby, and it supports temperature-compensated self-refresh (TCSR) to optimize refresh rate based on operating temperature.
Typical applications include servers, networking equipment, industrial computing, and embedded systems where high memory density and low power are critical. The 1.35V operation makes it ideal for power-sensitive designs, such as laptops, portable devices, and energy-efficient data centers.
When designing with this device, ensure proper decoupling of VDD and VDDQ with 0.1uF capacitors placed close to the pins. Follow the DDR3L layout guidelines for signal integrity, including matched trace lengths for DQ, DQS, and address/command signals. The device requires a stable 1.35V supply and a clean reference voltage (VREF) for optimal operation.
直接替換替代品，適用於 H5TC4G63CFR-xxI — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： H5TC4G63CFR-xxI （相同外形與佔位） — 差異在於 Organization, Package, Burst Length, Supply Voltage (VDD), Supply Voltage (VDDQ).
H5TC4G63CFR-xxA
✅ 直接替換📋 參考替代品（不在目錄中）
H5TC4G63CFR-RDAR
✅ 直接替換📋 參考替代品（不在目錄中）
H5TC4G63CFR-H9A
✅ 直接替換聯絡詢價
查看資料表 →K4B4G0846D
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
MT41K512M8DA-107
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
H5TC4G63CFR-xxI 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| Density | 4Gb |
| 組織 | 512M x 8 |
| Supply Voltage (VDD) | 1.35V +0.100 / -0.067V |
| Supply Voltage (VDDQ) | 1.35V +0.100 / -0.067V |
| 封裝 | 78-ball FBGA |
| RoHS | Compliant |
| Lead-Free | Yes |
| 無鹵素 | Yes |
| Burst Length | 8 (with burst chop) |
| On-Die Termination | Yes |
| Refresh | Auto-refresh, self-refresh, TCSR |
H5TC4G63CFR-xxI 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | VSS — Ground |
| 腳位 B1 | DQ1 — Data input/output 1 |
| 腳位 B2 | VDDQ — Power supply for output buffers |
| 腳位 B3 | DQ2 — Data input/output 2 |
| 腳位 C1 | VSSQ — Ground for output buffers |
| 腳位 C2 | DQ3 — Data input/output 3 |
| 腳位 C3 | VDD — Power supply |
| 腳位 D1 | CK — Clock input |
| 腳位 D2 | CK# — Complementary clock input |
| 腳位 D3 | VSS — Ground |
典型應用
H5TC4G63CFR-xxI 適用於 6 應用s: Server Main Memory, Networking Equipment, Industrial Computing, Embedded Systems, Automotive Infotainment, Consumer Electronics.
Server Main Memory
The H5TC4G63CFR-xxI provides high-density, low-power memory for server applications. Its 4Gb density and 1.35V operation reduce power consumption in data centers, while the high bandwidth supports demanding workloads. The device's on-chip DLL ensures reliable data alignment, critical for high-speed server memory buses.
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Networking Equipment
In networking equipment such as routers and switches, the H5TC4G63CFR-xxI offers the memory density and bandwidth needed for packet buffering and forwarding tables. Its low power operation at 1.35V is beneficial for power-constrained networking devices. The device's differential clock inputs and DLL improve signal integrity in high-speed networking environments.
推薦
Industrial Computing
The H5TC4G63CFR-xxI is suitable for industrial computing applications where reliability and low power are essential. Its wide operating temperature range and 1.35V operation make it ideal for harsh environments. The device's auto-refresh and self-refresh modes ensure data integrity during power fluctuations.
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Embedded Systems
For embedded systems, the H5TC4G63CFR-xxI provides high memory density in a compact 78-ball FBGA package. Its low power consumption at 1.35V extends battery life in portable devices. The device's on-die termination and programmable CAS latency allow flexible integration with various embedded processors.
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Automotive Infotainment
The H5TC4G63CFR-xxI can be used in automotive infotainment systems, providing high-bandwidth memory for navigation, multimedia, and connectivity features. Its 1.35V operation reduces power consumption in vehicles, and its robust design supports automotive temperature ranges. The device's high density enables storage of large maps and media files.
推薦
Consumer Electronics
In consumer electronics such as smart TVs and set-top boxes, the H5TC4G63CFR-xxI offers the memory capacity and speed required for high-definition video processing and multitasking. Its low power operation at 1.35V is ideal for energy-efficient devices. The device's burst length 8 and on-chip DLL ensure smooth data streaming.
推薦
推薦產品摘要
工程參考資料，適用於 H5TC4G63CFR-xxI — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | H5TC4G63CFR-xxA | H5TC4G63CFR-RDAR | K4B4G0846D |
|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung Electronics |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Low voltage operation at 1.35V (對比Standard DDR3 (1.5V))
- High density 4Gb in 78-ball FBGA (對比Lower density DDR3L parts)
- Lead-free and halogen-free (對比Older DDR3 parts with lead)
設計說明
Ensure stable 1.35V supply for VDD and VDDQ. Use low-ESR decoupling capacitors (0.1uF) placed close to each power pin. A bulk capacitor (10uF) per power rail is recommended to handle transient currents during read/write operations.
Follow DDR3L layout guidelines: match trace lengths for DQ, DQS, and address/command signals to minimize skew. Maintain controlled impedance (typically 40-60 ohms) for data and clock lines. Keep VREF traces short and well-decoupled.
The H5TC4G63CFR-xxI operates within a specified temperature range. Ensure adequate airflow or heatsinking in high-ambient-temperature environments. Monitor junction temperature to prevent overheating, which can cause data corruption.
合規資訊
Lead-free and halogen-free per datasheet. RoHS compliant. AEC-Q100 not applicable for memory components.