K4A8G085WB-BICH - 8Gb DDR4 SDRAM 1Gx8 | Samsung
MPN： K4A8G085WB-BICH ✓ 啟用中K4A8G085WB-BICH 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) and features higher module densities and improved signal integrity through on-die termination (ODT) and data bus inversion (DBI). DDR4 is the industry standard for main memory in servers, desktops, and embedded systems.
Key features include a 1.2V power supply, 8Gb density, x8 organization, and a 78-ball FBGA package. The device supports various burst lengths (BL8, BL16) and features programmable CAS latency, write latency, and refresh rates. It also includes on-die ECC, error correction coding, and temperature-compensated refresh for enhanced reliability.
Technically, the K4A8G085WB-BICH utilizes Samsung's advanced B-die process technology, offering low power consumption and high-speed operation. It supports a wide operating temperature range of 0°C to 85°C, making it suitable for commercial and industrial environments. The device is RoHS compliant and lead-free.
Typical applications include servers, data centers, networking equipment, and high-end consumer electronics. Its high density and speed make it ideal for memory-intensive tasks such as virtualization, cloud computing, and real-time analytics.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and careful attention to timing parameters for reliable operation.
直接替換替代品，適用於 K4A8G085WB-BICH — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4A8G085WB-BICH （相同外形與佔位） — 差異在於 Data Rate, Operating Temperature, Burst Length, Package, Supply Voltage.
K4A8G085WB-BCPB
✅ 直接替換✓ 有庫存
$13.7813 / 單位
查看資料表 →K4A8G085WB-BCRC
✅ 直接替換聯絡詢價
查看資料表 →K4A8G085WB-BIRC
✅ 直接替換✓ 有庫存
$6.5625 / 單位
查看資料表 →K4A8G085WC-BIWE
✅ 直接替換聯絡詢價
查看資料表 →K4A8G085WB-BCTD
✅ 直接替換聯絡詢價
查看資料表 →K4A8G085WB-BITD
✅ 直接替換聯絡詢價
查看資料表 →K4A8G085WB-BICH 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| Density | 8Gb |
| 組織 | 1G x 8 |
| 供應電壓 | 1.2V |
| 資料速率 | 2400 Mbps (DDR4-2400) |
| 封裝 | 78-ball FBGA |
| 工作溫度 | 0°C to 85°C |
| Max Supply Current | 170mA |
| Burst Length | BL8, BL16 |
| CAS 延遲 | Programmable |
| On-Die ECC | Yes |
| Data Bus Inversion | Yes |
| RoHS | Compliant |
| Lead-Free | Yes |
| Die Revision | B-die |
K4A8G085WB-BICH 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 B1 | DQ2 — Data input/output 2 |
| 腳位 B2 | DQ3 — Data input/output 3 |
| 腳位 B3 | VDD — Power supply |
| 腳位 B4 | DQ4 — Data input/output 4 |
| 腳位 C1 | DQ5 — Data input/output 5 |
| 腳位 C2 | VSS — Ground |
| 腳位 C3 | DQ6 — Data input/output 6 |
| 腳位 C4 | DQ7 — Data input/output 7 |
典型應用
K4A8G085WB-BICH 適用於 6 應用s: Server Memory, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment, Data Center Storage.
Server Memory
The K4A8G085WB-BICH provides high-density, high-speed memory for servers, enabling fast data processing and virtualization. Its 8Gb density and DDR4-2400 speed support demanding workloads, while 1.2V operation reduces power consumption in data centers. The FBGA-78 package allows compact module designs, and on-die ECC enhances reliability for enterprise applications.
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Networking Equipment
In networking equipment such as routers and switches, the K4A8G085WB-BICH offers high bandwidth and low latency for packet processing and routing tables. Its 1.2V operation minimizes heat generation, crucial for dense line cards. The x8 organization simplifies board layout, and the wide temperature range supports outdoor and industrial networking gear.
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Industrial Computing
For industrial PCs and embedded systems, the K4A8G085WB-BICH provides reliable memory operation from 0°C to 85°C. Its high density supports complex control algorithms and data logging. The FBGA package is robust for harsh environments, and the low power consumption is ideal for fanless designs. On-die ECC helps prevent data corruption in critical applications.
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Consumer Electronics
In high-end consumer devices like gaming consoles and set-top boxes, the K4A8G085WB-BICH delivers fast memory performance for smooth graphics and multitasking. Its 8Gb density allows for rich multimedia experiences, while 1.2V operation extends battery life in portable devices. The compact FBGA package enables slim product designs.
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Automotive Infotainment
The K4A8G085WB-BICH supports automotive infotainment systems requiring high memory bandwidth for navigation, multimedia, and driver assistance. Its wide temperature range and reliability make it suitable for vehicle environments. The 1.2V operation reduces power draw, and the FBGA package withstands vibration. On-die ECC enhances data integrity for safety-critical functions.
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Data Center Storage
In data center storage systems, the K4A8G085WB-BICH provides high-speed cache memory for SSDs and storage controllers. Its 8Gb density and DDR4-2400 speed accelerate data access, while low power consumption reduces operational costs. The FBGA package is ideal for high-density storage arrays, and on-die ECC ensures data integrity in large-scale deployments.
推薦
推薦產品摘要
工程參考資料，適用於 K4A8G085WB-BICH — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4A8G085WB-BCPB | K4A8G085WB-BCRC | K4A8G085WB-BIRC |
|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
主要差異化特點
- B-die process technology (對比K4A8G085WC-BIWE (C-die))
- Wide operating temperature range (對比K4A8G085WB-BCPB)
- On-die ECC support (對比K4A8G085WB-BCRC)
設計說明
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and route DQ signals with matched trace lengths to ensure signal integrity. Follow the layout guidelines in the Samsung datasheet for optimal performance.
The K4A8G085WB-BICH operates up to 85°C. Ensure adequate airflow or heatsinking in high-temperature environments. The max supply current is 170mA, so power dissipation is moderate, but thermal management is still important for reliability.
Use on-die termination (ODT) settings to match the memory controller's impedance and reduce reflections. Set the appropriate ODT values in the memory controller registers. Also, enable data bus inversion (DBI) to reduce simultaneous switching noise.
合規資訊
RoHS compliant per Samsung datasheet. Lead-free. AEC-Q100 not applicable for memory components.
