K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
MPN： K4A8G165WB-BCWE ✓ 啟用中| 數量 | 單價 | 小計 |
|---|---|---|
| 1 | $8.35 | $8.35 |
| 10 | $7.85 | $78.50 |
| 100 | $7.35 | $735.00 |
| 500 | $6.95 | $3,475.00 |
| 1,000 | $6.55 | $6,550.00 |
K4A8G165WB-BCWE 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a volatile memory technology that transfers data on both edges of the clock signal, doubling bandwidth versus DDR3 at the same clock. As a member of the voltage regulator of system cost and power - DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 hierarchy - it operates at 1.2 V instead of the 1.5 V of DDR3, cutting power consumption by roughly 25% while raising density and bandwidth. DDR4 is the industry-standard main memory for servers, workstations, desktops, networking, and embedded computing platforms.
Key features of the K4A8G165WB-BCWE include the 3200 Mbps speed bin (PC4-25600 class), a 16-bit data interface suited to space-constrained boards that cannot use 64/72-bit DIMM channels, bank group architecture for improved effective bandwidth, and on-die termination with ZQ calibration for signal integrity. The commercial temperature range of 0 to +85 C covers consumer, computing, and most industrial environments.
Architecturally, this device belongs to Samsung's DDR4 B-die family, widely recognized for tight timing and strong overclocking headroom. It uses a burst length of 8, supports auto precharge, asynchronous reset, CRC and data mask functions, and dynamic on-chip termination, all of which reduce controller overhead and improve bus efficiency at high data rates.
Typical applications include desktop and embedded x86/ARM main memory, networking line cards, industrial gateways, set-top boxes, and gaming or workstation graphics-adjacent memory buffers, where an 8 Gb x16 device allows 4 GB to 8 GB of memory in only two to four packages.
Design consideration: route the 3200 Mbps data lines with controlled impedance and length matching, and place decoupling capacitors directly at the 1.2 V VDD balls; the datasheet layout guidelines should be followed to avoid eye-diagram closure.
This page synthesizes distributor pricing, verified drop-in alternatives across Samsung, Micron, and Nanya, and practical design notes not found in the manufacturer datasheet alone.
直接替換替代品，適用於 K4A8G165WB-BCWE — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4A8G165WB-BCWE （相同外形與佔位） — 差異在於 Package, Data Rate, Interface, Operating Temperature, Memory Size.
快速比較工具 — 選擇替代零件進行並排比較：
K4A8G165WC-BCWE
✗ 缺貨
$38 / 單位
查看資料表 →K4A8G165WB-BCTD
✗ 缺貨
$37 / 單位
查看資料表 →K4A8G165WB-BCRC
✗ 缺貨
$12.57 / 單位
查看資料表 →K4A8G165WB-BIRC
聯絡詢價
查看資料表 →K4A8G165WB-BCPB
聯絡詢價
查看資料表 →MT40A512M16LY-062E AAT:E
聯絡詢價
查看資料表 →NT5AD512M16A4-GZ
聯絡詢價
查看資料表 →K4A8G165WB-BCWE 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| Density | 8 Gb |
| 組織 | 512M x 16 |
| 資料速率 | 3200 Mbps |
| 供應電壓 | 1.2 V |
| Access Time (CAS Latency) | 19 ns |
| 介面 | Parallel |
| 封裝 | 96FBGA |
| 安裝類型 | Surface Mount |
| 工作溫度 | 0C to +85C |
| Burst Length | 8 |
| Bank Group Architecture | Yes |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration |
| Functions | Auto precharge, asynchronous reset, CRC, data mask |
| RoHS 狀態 | Compliant |
| Lead Free | Yes |
K4A8G165WB-BCWE 96fbga 腳位配置指南
K4A8G165WB-BCWE（96fbga 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： K4A8G165WB-BCWE.
請參閱 資料表 以查看完整腳位配置。
典型應用
K4A8G165WB-BCWE 適用於 6 應用s: Desktop and Workstation Main Memory, Networking Equipment and Line Cards, Embedded ARM and Industrial Computing, Gaming and Enthusiast PC Memory Modules, Set-Top Boxes and Smart Home Hubs, Edge AI and Data Acquisition Systems.
Desktop and Workstation Main Memory
The K4A8G165WB-BCWE serves as main system memory in desktop PCs, mini-PCs, and workstations where x16 organization is used on SO-DIMM style or soldered-down memory designs. Its 3200 Mbps data rate matches DDR4-3200 (PC4-25600) JEDEC-class memory controllers in modern Intel and AMD platforms, and the 8 Gb density allows 8 GB of RAM in only four packages on space-constrained boards. The Samsung B-die silicon provides margin above the rated timings for stability under memory-controller stress, and dynamic ODT with ZQ calibration maintains signal integrity across the high-speed bus. Designers should follow the datasheet fly-by routing and length-matching guidance at 3200 Mbps to keep eye margins at the controller.
推薦
Networking Equipment and Line Cards
Enterprise switches, routers, and industrial gateways use DDR4 x16 components like the K4A8G165WB-BCWE for packet buffering, route tables, and control-plane memory. The 16-bit interface lets designers build 32-bit or 64-bit buses with two or four packages, and the 3200 Mbps rate supplies the bandwidth required for gigabit-class and multi-gigabit forwarding paths. Bank group architecture improves effective throughput on random access patterns typical of packet processing, while CRC and asynchronous reset functions improve link robustness in always-on equipment. The 1.2 V operation reduces total board power versus DDR3 solutions, an important factor in fanless and PoE-budget-constrained network hardware.
推薦
Embedded ARM and Industrial Computing
Embedded ARM SoCs (NXP i.MX, TI Sitara, Rockchip, Allwinner families) with DDR4 controllers commonly pair with x16 DRAM such as the K4A8G165WB-BCWE in soldered-down designs. The 8 Gb density supports Linux, real-time analytics, and edge-AI inference workloads without external storage paging, and the 96FBGA footprint fits dense carrier boards. The 0C to +85C commercial-industrial range covers most factory-floor enclosures; for unheated outdoor installations, designers should select the BCRC or industrial BI suffix variants rated to 95C or beyond. Layout attention to the 3200 Mbps signal integrity requirements - length matching, reference planes, and VTT termination - is essential for production reliability.
推薦
Gaming and Enthusiast PC Memory Modules
The K4A8G165WB-BCWE is a Samsung B-die component, a silicon revision celebrated in the PC enthusiast community for exceptional overclocking and tight subtimings. UDIMM and SODIMM module builders use B-die x16 parts for high-performance gaming memory where latencies below JEDEC defaults are achievable at 3200 Mbps and beyond. The 512M x 16 organization is specifically used in SODIMMs and small-outline modules for compact gaming laptops and mini-ITX systems. Strictly within specification, the part delivers DDR4-3200 with 19 ns access timing; headroom beyond that is an engineering margin bonus rather than a guarantee, so module qualification should still validate every timing register across voltage and temperature corners.
推薦
Set-Top Boxes and Smart Home Hubs
Consumer set-top boxes, Android TV platforms, and smart home hub gateways use soldered-down DDR4 x16 memory such as the K4A8G165WB-BCWE alongside SoCs from Amlogic, Rockchip, and Allwinner. The 8 Gb density supports 1 GB to 2 GB RAM configurations (one or two packages), adequate for 4K video decoding buffers and smart-home middleware. Its 1.2 V rail simplifies power-tree design in cost-sensitive consumer products, and the 96FBGA package supports compact two- or four-layer stack-ups common in this segment. The 0C to +85C range covers typical living-room and cabinet environments, and burst-length-8 operation aligns with the burst-oriented memory controllers in these media SoCs.
推薦
Edge AI and Data Acquisition Systems
Edge-AI inference modules, machine-vision cameras, and high-speed data acquisition systems require fast frame buffers and model storage, which the K4A8G165WB-BCWE provides at low power. The 3200 Mbps rate delivers the bandwidth needed to stream multiple sensor interfaces into DRAM while an NPU or GPU consumes activation data, and the 8 Gb density holds neural-network weights for vision models without falling back to flash. Its x16 organization suits the 16/32-bit DDR4 controllers on edge compute modules. For passively cooled edge enclosures, thermal analysis should confirm junction temperatures remain within the 0C to +85C window or that the BCRC (95C) variant is selected, ensuring long-term data retention margins and refresh reliability.
推薦
推薦產品摘要
工程參考資料，適用於 K4A8G165WB-BCWE — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4A8G165WC-BCWE | K4A8G165WB-BCRC | MT40A512M16LY-062E AAT | NT5AD512M16A4-GZ |
|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA - same | 96FBGA (PBGA96) - same | E: 96FBGA - same | 96FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | E: Micron Technology | Nanya Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | E: 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | E: 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | E: 1.2 V | 1.2 V |
主要差異化特點
- Samsung B-die silicon with strong timing margin (對比NT5AD512M16A4-GZ)
- Native 16-bit organization for compact boards (對比H5AN8G6NDJR)
- Cost trade-off vs same-family 95C variant (對比K4A8G165WC-BCWE)
設計說明
At 3200 Mbps, DDR4 signal integrity dominates design success. Route all DQ/DQS/DM nets as tightly length-matched groups (intra-byte-lane matching typically within a few mils) over continuous reference planes, and use fly-by routing for address/command/clock with on-die termination configured via mode registers. Simulate the eye diagram at the controller with IBIS models from Samsung before tape-out, and verify VTT (0.6 V) termination regulation under simultaneous switching of all 16 DQ balls.
Provide three rails: VDD/VDDQ at 1.2 V, VPP at 2.5 V, and VTT at 0.6 V (VDDQ/2). Estimate: with 16 DQ lines terminating to VTT, transient currents can reach amperes during burst writes, so place bulk and high-frequency decoupling (10 uF bulk plus multiple 0.1 uF/0.01 uF ceramics) directly at the 96FBGA power ball array. A dedicated LDO or VTT termination regulator (sourcing and sinking) is required - do not derive VTT from a resistive divider.
Do not mix speed-bin suffixes (WB-BCWE vs WB-BCRC vs WC-BCWE) on the same memory bus without verifying AC timing and temperature ranges in your memory controller initialization code - RC and WC suffixes extend to 95C and carry different feature sets (CRC, data mask). Also confirm the controller's ZQ calibration interval settings match the datasheet; skipping or misconfiguring ZQ calibration is a frequent cause of intermittent failures at DDR4-3200.
合規資訊
RoHS compliant and lead-free per internal database description. REACH and conflict-minerals status not stated in provided data.
