K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
Référence : K4A8G165WC-BCWE ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $47.51 | $47,51 |
| 10 | $45 | $450,00 |
| 100 | $42.5 | $4 250,00 |
| 500 | $40 | $20 000,00 |
| 1 000 | $38 | $38 000,00 |
K4A8G165WC-BCWE Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than previous generations, reducing power consumption while delivering higher bandwidth. DDR4 is the industry standard for main memory in servers, desktops, laptops, and embedded systems, offering improved reliability and performance over its predecessors.
Key features of the K4A8G165WC-BCWE include auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check) for data integrity, ZQ calibration for improved signal integrity, dynamic on-chip termination (ODT) for better signal quality, and data mask function. These features enhance system reliability and performance, especially in high-speed data transmission environments. The device complies with JEDEC standards for DDR4 memory, ensuring interoperability with a wide range of controllers and systems.
Technically, the K4A8G165WC-BCWE utilizes Samsung's advanced C-die process technology, which contributes to its high speed and low power consumption. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for modern PCB designs. The device supports a burst length of 8 and burst chop of 4, and includes programmable CAS latency and additive latency for flexible timing configurations.
Typical applications include high-performance computing, networking equipment, data centers, and embedded systems requiring large memory capacity and high bandwidth. The 512M x 16 organization is ideal for systems with a 16-bit data bus, such as advanced microprocessors and FPGAs. The low operating voltage and high speed make it suitable for power-sensitive applications like laptops and portable devices.
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. Also, follow the JEDEC DDR4 layout guidelines for signal integrity, especially for high-speed signals. The device requires a stable 1.2V supply and a separate VPP of 2.5V for word line boost, which must be properly regulated.
Alternatives de remplacement direct pour K4A8G165WC-BCWE — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4A8G165WC-BCWE (même facteur de forme et même empreinte) — différant par Interface, Package, Data Rate, Memory Type, Supply Voltage.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4A8G165WG-BCWE
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$29.5313 / unité
Voir la fiche technique →K4A8G165WC-BCRC
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$23 / unité
Voir la fiche technique →K4A8G165WB-BCWE
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$6.55 / unité
Voir la fiche technique →MT40A512M16JY-075E
✓ En stock
$30.5 / unité
Voir la fiche technique →H5AN8G6NDJR
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$35 / unité
Voir la fiche technique →AS4C512M16D4A-62BCN
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$7.2 / unité
Voir la fiche technique →NT5AD512M16C4-JRI
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$75.58 / unité
Voir la fiche technique →YZ48G16V-F9HPI-M
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$8.6 / unité
Voir la fiche technique →K4A8G165WC-BCWE Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gb |
| Organisation de la mémoire | 512M x 16 |
| Débit de données | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V |
| VPP Voltage | 2.5 V |
| Plage de température de fonctionnement | 0°C to +95°C |
| Boîtier | 96-FBGA |
| Type de montage | Surface Mount |
| Burst Length | 8 (BL8) / 4 (BC4) |
| Number of Banks | 16 |
| Row Address Bits | 16 |
| Column Address Bits | 10 |
| Interface | Differential (CK, /CK) |
| Statut RoHS | Compliant |
| JEDEC Standard | JEDEC DDR4 |
Configuration des broches de K4A8G165WC-BCWE
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | VSS — Ground |
| Broche B1 | DQ1 — Data input/output 1 |
| Broche B2 | VDDQ — Power supply for output buffers |
| Broche B3 | DQ2 — Data input/output 2 |
| Broche C1 | VSSQ — Ground for output buffers |
| Broche C2 | DQ3 — Data input/output 3 |
| Broche C3 | VDD — Power supply (1.2V) |
| Broche D1 | DQ4 — Data input/output 4 |
| Broche D2 | VSS — Ground |
| Broche D3 | DQ5 — Data input/output 5 |
| Broche E1 | VDDQ — Power supply for output buffers |
| Broche E2 | DQ6 — Data input/output 6 |
| Broche E3 | VSSQ — Ground for output buffers |
| Broche F1 | DQ7 — Data input/output 7 |
| Broche F2 | VDD — Power supply (1.2V) |
| Broche F3 | DQ8 — Data input/output 8 |
| Broche G1 | VSS — Ground |
| Broche G2 | DQ9 — Data input/output 9 |
| Broche G3 | VDDQ — Power supply for output buffers |
| Broche H1 | DQ10 — Data input/output 10 |
| Broche H2 | VSSQ — Ground for output buffers |
| Broche H3 | DQ11 — Data input/output 11 |
| Broche J1 | VDD — Power supply (1.2V) |
| Broche J2 | DQ12 — Data input/output 12 |
| Broche J3 | VSS — Ground |
| Broche K1 | DQ13 — Data input/output 13 |
| Broche K2 | VDDQ — Power supply for output buffers |
| Broche K3 | DQ14 — Data input/output 14 |
| Broche L1 | VSSQ — Ground for output buffers |
| Broche L2 | DQ15 — Data input/output 15 |
| Broche L3 | VDD — Power supply (1.2V) |
| Broche M1 | VSS — Ground |
| Broche M2 | CK — Clock input (positive) |
| Broche M3 | VDDQ — Power supply for output buffers |
| Broche N1 | /CK — Clock input (negative) |
| Broche N2 | VSSQ — Ground for output buffers |
| Broche N3 | CKE — Clock enable |
| Broche P1 | VDD — Power supply (1.2V) |
| Broche P2 | VSS — Ground |
| Broche P3 | CS_n — Chip select (active low) |
Applications typiques
K4A8G165WC-BCWE convient pour 6 applications: High-Performance Computing, Networking Equipment, Embedded Systems, Data Center Servers, Consumer Electronics, Automotive Infotainment.
High-Performance Computing
The K4A8G165WC-BCWE provides 8Gb density and 3200 Mbps speed, making it ideal for servers and workstations that require large memory capacity and high bandwidth. Its low 1.2V operation reduces power consumption in data centers, while the 96-FBGA package enables high-density DIMM designs. The device's CRC and on-die ECC features enhance data integrity in mission-critical computing environments.
Recommandé
Networking Equipment
In routers, switches, and network appliances, the K4A8G165WC-BCWE offers the speed and capacity needed for packet buffering and routing tables. Its 3200 Mbps data rate supports high-throughput data processing, while the 1.2V supply helps meet strict power budgets. The device's dynamic ODT and ZQ calibration improve signal integrity on high-speed buses, ensuring reliable operation in noisy environments.
Recommandé
Embedded Systems
For embedded applications like industrial controllers and IoT gateways, the K4A8G165WC-BCWE provides a balance of density, speed, and power efficiency. Its 0°C to +95°C temperature range covers most commercial and industrial environments. The 96-FBGA package is suitable for compact PCB designs, and the device's low power consumption extends battery life in portable systems.
Recommandé
Data Center Servers
The K4A8G165WC-BCWE is well-suited for data center servers that require high memory capacity and bandwidth for virtualization, databases, and cloud computing. Its 8Gb density allows for large memory modules, and the 3200 Mbps speed meets the demands of modern processors. The low operating voltage reduces total power consumption, contributing to energy-efficient data centers.
Recommandé
Consumer Electronics
In high-end consumer devices like gaming consoles and set-top boxes, the K4A8G165WC-BCWE delivers the memory performance needed for smooth graphics and multitasking. Its 3200 Mbps data rate supports high-resolution video and gaming, while the 1.2V supply helps manage heat and power in compact enclosures. The device's small FBGA package enables slim device designs.
Recommandé
Automotive Infotainment
The K4A8G165WC-BCWE can be used in automotive infotainment systems that require high memory bandwidth for navigation, multimedia, and driver assistance features. Its 0°C to +95°C temperature range is suitable for cabin environments, though not for under-hood applications. The device's reliability features like CRC and ODT ensure stable operation in the electrically noisy automotive environment.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4A8G165WC-BCWE — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4A8G165WG-BCWE | MT40A512M16JY-075E | H5AN8G6NDJR |
|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Principaux différenciateurs
- C-die revision with wide temperature range (vs K4A8G165WG-BCWE)
- Samsung's proven reliability and performance (vs MT40A512M16JY-075E)
- Availability and ecosystem support (vs H5AN8G6NDJR)
Notes de conception
Ensure stable 1.2V VDD and 2.5V VPP supplies with adequate decoupling. Place 0.1uF and 1uF ceramic capacitors close to each power pin to minimize noise and voltage droop during high-speed switching. Follow the JEDEC DDR4 power distribution guidelines for optimal performance.
Route high-speed DQ, DQS, and clock signals with controlled impedance (typically 40-50 ohms) and matched trace lengths to ensure signal integrity. Use ground planes and minimize vias on critical signals. Refer to the Samsung layout guidelines in the datasheet for recommended routing and spacing.
The K4A8G165WC-BCWE operates up to +95°C, but ensure adequate airflow or heatsinking in high-power systems. The 96-FBGA package has a thermal resistance that should be considered; use thermal vias under the package to improve heat dissipation. Monitor junction temperature to avoid exceeding the maximum rating.
Informations de conformité
RoHS compliance is indicated by Samsung's product page. Other compliance details are not explicitly stated in the provided data.
