K9LUGY8J7D-BCK0 - Samsung V-NAND Flash Memory | Samsung
MPN： K9LUGY8J7D-BCK0 ✓ 啟用中K9LUGY8J7D-BCK0 概覽
NAND flash memory is a non-volatile storage technology that retains data without power and forms the storage layer in solid-state drives (SSDs), eMMC/UFS modules, memory cards, and embedded systems. Within the memory hierarchy, NAND flash sits below DRAM as persistent bulk storage; 3D V-NAND stacks memory cells vertically to increase bit density while reducing cell-to-cell interference compared with planar NAND.
The K9LUGY8J7D family is designed for mass-storage applications requiring high capacity per package. Samsung's V-NAND technology improves endurance and write performance through charge-trap flash cells arranged in vertical stacks. Devices in this class interface via a standard ONFI-compliant asynchronous/DDR toggle-mode NAND interface, supporting page-program and block-erase commands managed by a host-side controller with ECC (error correcting code) such as BCH or LDPC.
Typical applications include solid-state drives, eMMC and UFS embedded storage, industrial storage modules, set-top boxes, and networking equipment requiring reliable non-volatile storage.
When designing with high-density V-NAND, the host controller must implement wear leveling, bad-block management, and refresh algorithms, and layout should follow Samsung's signal-integrity guidance for high-speed data lines.
This page synthesizes drop-in family alternatives, application guidance, and sourcing information in one place, adding value beyond the raw manufacturer datasheet. Note that many parametric values below are pending verification against the official Samsung datasheet and are marked .
直接替換替代品，適用於 K9LUGY8J7D-BCK0 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K9LUGY8J7D-BCK0 （相同外形與佔位） — 差異在於 Memory Type, Cell Type, Technology, RoHS Status, Density.
K9KUGY8J7C-BCK0
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K9KUGY8J7C-CCK0
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K9JUGY8J5C-BCK0
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K9JUGY8J5C-CCK0
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K9IUGY8J7B-BCK0
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K9IUGY8J7B-CCK0
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K9LUGY8J7D-BCK0 最大額定值與電氣特性
| Manufacturer | Samsung Electronics |
| Product Type | 3D V-NAND Flash Memory |
| Memory Technology | V-NAND (3D NAND flash) |
| 安裝類型 | Surface Mount |
| RoHS 狀態 | unknown |
K9LUGY8J7D-BCK0 standard 腳位配置指南
K9LUGY8J7D-BCK0（standard 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： K9LUGY8J7D-BCK0.
請參閱 資料表 以查看完整腳位配置。
典型應用
K9LUGY8J7D-BCK0 適用於 6 應用s: Solid-State Drives, Embedded eMMC / UFS Storage, Industrial Storage Modules, Set-Top Boxes and Smart TVs, Networking and Telecom Equipment, Automotive Infotainment and Telematics.
Solid-State Drives
Samsung V-NAND devices of the K9LUGY8J7D class are core storage media in client and consumer SSDs. The vertical 3D cell stacking delivers high bits per package, allowing SSD controllers to aggregate multiple dies on shared channels for parallelism. In this role the NAND connects to an SSD controller over toggle-mode/ONFI interfaces; the controller implements wear leveling, LDPC ECC, and garbage collection to manage TLC cell endurance characteristics. The design benefit is high capacity per BGA footprint with Samsung's mature V-NAND reliability record, while the trade-off is strict dependence on controller firmware quality for endurance and retention.
推薦
Embedded eMMC / UFS Storage
Raw V-NAND of this family is packaged by Samsung into eMMC and UFS embedded storage modules used in smartphones, tablets, and IoT devices. The K9LUGY8J7D-class NAND provides the non-volatile layer behind the eMMC/UFS controller, which abstracts NAND management from the host. Benefits include proven V-NAND endurance, high sequential throughput over the UFS interface, and industrial temperature options. Designers of custom embedded boards who choose raw NAND instead of finished eMMC gain cost control but must implement full flash translation layers, bad-block management, and refresh algorithms in their host controller firmware.
推薦
Industrial Storage Modules
Industrial PCs, data loggers, and factory automation systems use V-NAND like the K9LUGY8J7D-BCK0 in CFast, mSATA, and board-level storage modules. V-NAND's charge-trap cells tolerate program-disturb stress better than planar NAND, supporting the high write duty cycles of logging applications. Industrial builds benefit from fixed-BOM supply agreements on Samsung NAND and predictable endurance data for maintenance scheduling. The design consideration is that industrial controllers must implement power-fail protection circuits (bulk capacitors plus firmware checkpointing) because unexpected power loss during a program operation can corrupt the affected page.
推薦
Set-Top Boxes and Smart TVs
Broadcast and streaming set-top boxes use K9LUGY8J7D-class V-NAND for firmware storage and DVR content buffering. The BGA NAND provides gigabit-class capacity in a compact footprint, and toggle-mode interfaces keep controller pin counts low. Low standby power of V-NAND suits always-on consumer electronics, and the TLC density point keeps bill-of-material cost competitive for high-volume CE manufacturing. Designers should verify the NAND's timing modes against the SoC's NAND controller, as many CE SoCs support only a subset of toggle-mode speeds, requiring conservative timing configuration at boot.
推薦
Networking and Telecom Equipment
Routers, switches, and 5G small-cell equipment store firmware, configuration, and log data on V-NAND devices of this class. The K9LUGY8J7D-BCK0's high density enables redundant firmware banks and extended log retention on a single package. Samsung V-NAND's stable read-disturb behavior suits equipment with 24/7 read-mostly duty cycles, and the BGA package withstands vibration better than card-based storage. Telecom designers typically pair the NAND with industrial-temperature controllers and must derate endurance estimates for continuous ambient temperatures above the consumer baseline specified in the Samsung datasheet.
推薦
Automotive Infotainment and Telematics
Automotive head units, digital clusters, and telematics control units require multi-gigabyte non-volatile storage for navigation maps and media, using V-NAND like the K9LUGY8J7D-BCK0 within automotive-qualified eMMC/UFS or raw-NAND subsystems. V-NAND tolerance of wide temperature swings and high vibration environments makes it well matched to vehicle electronics, and its density supports OTA update partitioning with A/B fallback banks. Automotive designers must verify the specific ordering code's qualification level (AEC-Q100 grade or Samsung automotive qualification), since suffix variants differ, and should implement power-interruption-safe FTL firmware for cranking and load-dump scenarios.
推薦
推薦產品摘要
工程參考資料，適用於 K9LUGY8J7D-BCK0 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K9KUGY8J7C-BCK0 | K9JUGY8J5C-BCK0 | K9IUGY8J7B-BCK0 |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Generation / Revision | D revision (newest in family) | C revision (prior) | C revision, J5 family | B revision, I generation |
主要差異化特點
- Newest D-revision V-NAND process generation (對比K9KUGY8J7C-BCK0)
- Longer supply longevity than older generations (對比K9IUGY8J7B-BCK0)
- Higher capacity option within the same family (對比K9JUGY8J5C-BCK0)
設計說明
Samsung V-NAND devices use separate VCC (core) and VCCQ (I/O) supply rails. Decouple each rail with low-ESR ceramic capacitors (typically 0.1uF per ball group plus bulk capacitance) placed as close to the BGA as possible. Verify power sequencing between VCC and VCCQ in the device datasheet before power-tree design; incorrect sequencing can stress I/O structures. Estimated rail currents depend on operating mode (read, program, erase) and should be taken from the official Samsung datasheet ICC tables, which were not available in the current verified data.
In toggle-mode/DDR operation, DQ, RE#, and WE# lines toggle at high rates. Length-match the DQ bus within the tolerance specified by Samsung's layout guide, maintain a continuous ground reference plane beneath the bus, and avoid routing data lines across plane splits. Add series termination resistors near the driver as recommended for the applicable speed grade. Simulation of the full channel (controller, PCB trace, NAND input) is recommended for first-pass success on new boards using this V-NAND generation.
The most frequent raw-NAND design errors are under-provisioned ECC (modern TLC V-NAND needs LDPC, not simple BCH), missing bad-block management in the flash translation layer, and ignoring power-fail integrity - a lost power event during program/erase can corrupt the operating page or block. Budget firmware effort accordingly, and reserve spare blocks for wear leveling. Also confirm the exact -BCK0 suffix meaning (speed grade/packing) from Samsung before ordering, since suffix variants are not interchangeable on the same PCB in all cases.
合規資訊
No explicit compliance declarations for this exact ordering code were present in the retrieved web data. Samsung current-generation V-NAND is generally RoHS/lead-free compliant as standard; obtain the official declaration from Samsung Semiconductor product compliance documentation.
