1EDN7126GXTMA1 vs 1EDN7511BXUSA1 对比

详细并排对比 1EDN7126GXTMA1 出自 Infineon 和 1EDN7511BXUSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 1EDN7126GXTMA1 1EDN7511BXUSA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.29 $0.95
功能 Single-channel TDI gate driver for GaN HEMT and Si MOSFET —
Configuration Non-Inverting Inverting, Non-Inverting
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A 4 A
Peak Sink Current 1.5 A 8 A
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) —
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
工作温度范围 -40C to +125C -40 C to +150 C
封装 PG-VSON-10-4 PG-SOT23-6-2 (6-pin SOT-23)
安装类型 Surface Mount Surface Mount (SMD/SMT)
MSL 等级 [DATA_NEEDED: MSL rating] —
RoHS 状态 Compliant Compliant
Reach Compliant —
Lead-Free Yes Yes
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) TTL / CMOS
Driver Type — Low-Side, Single Channel
Number of Drivers — 1
输出数量 — 1
上升时间 — [DATA_NEEDED: rise time ns]
下降时间 — 4.5 ns
Propagation Delay — ±5 ns (matched)
工作电源电压 — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (integrated)
Output Stage — True low-impedance complementary rail-to-rail
Packaging — Cut Tape (Tape & Reel available)

数据手册与资源

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