1EDN7126GXTMA1 vs 1EDN7511BXUSA1 Comparison

Detailed side-by-side comparison of 1EDN7126GXTMA1 by Infineon and 1EDN7511BXUSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDN7126GXTMA1 1EDN7511BXUSA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Function Single-channel TDI gate driver for GaN HEMT and Si MOSFET —
Configuration Non-Inverting Inverting, Non-Inverting
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A 4 A
Peak Sink Current 1.5 A 8 A
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) —
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
Operating Temperature Range -40C to +125C -40 C to +150 C
Package PG-VSON-10-4 PG-SOT23-6-2 (6-pin SOT-23)
Mounting Type Surface Mount Surface Mount (SMD/SMT)
MSL Level [DATA_NEEDED: MSL rating] —
RoHS Status Compliant Compliant
Reach Compliant —
Lead-Free Yes Yes
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) TTL / CMOS
Driver Type — Low-Side, Single Channel
Number of Drivers — 1
Number of Outputs — 1
Rise Time — [DATA_NEEDED: rise time ns]
Fall Time — 4.5 ns
Propagation Delay — ±5 ns (matched)
Operating Supply Voltage — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (integrated)
Output Stage — True low-impedance complementary rail-to-rail
Packaging — Cut Tape (Tape & Reel available)

Datasheets & Resources

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