1EDN7511BXUSA1 vs 1EDN7126GXTMA1 对比

详细并排对比 1EDN7511BXUSA1 出自 Infineon 和 1EDN7126GXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 1EDN7511BXUSA1 1EDN7126GXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $0.29
Driver Type Low-Side, Single Channel —
Number of Drivers 1 —
输出数量 1 —
Configuration Inverting, Non-Inverting Non-Inverting
Peak Source Current 4 A 1.5 A
Peak Sink Current 8 A 1.5 A
上升时间 [DATA_NEEDED: rise time ns] —
下降时间 4.5 ns —
Propagation Delay ±5 ns (matched) —
工作电源电压 [DATA_NEEDED: VCC range V] —
Input Logic Compatibility TTL / CMOS 3.3 V / 5 V TTL/CMOS (TDI)
UVLO Protection Yes (integrated) —
Output Stage True low-impedance complementary rail-to-rail —
工作温度范围 -40 C to +150 C -40C to +125C
封装 PG-SOT23-6-2 (6-pin SOT-23) PG-VSON-10-4
安装类型 Surface Mount (SMD/SMT) Surface Mount
Packaging Cut Tape (Tape & Reel available) —
RoHS 状态 Compliant Compliant
Lead-Free Yes Yes
功能 — Single-channel TDI gate driver for GaN HEMT and Si MOSFET
Channel Type — Single
Driven Supply Voltage — [DATA_NEEDED: VCC max value]
Common-Mode Voltage (CMR) — 200 V
Input Type — Truly Differential Input (TDI)
Propagation Delay (Typ.) — [DATA_NEEDED: tpd typical value]
Rise / Fall Time (Typ.) — [DATA_NEEDED: tr / tf typical value]
MSL 等级 — [DATA_NEEDED: MSL rating]
Reach — Compliant

数据手册与资源

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