1EDN7511BXUSA1 vs 1EDN7126GXTMA1 Comparison

Detailed side-by-side comparison of 1EDN7511BXUSA1 by Infineon and 1EDN7126GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
1EDN7511BXUSA1 1EDN7511BXUSA1 - 4A/8A Low-Side Gate Driver | Infineon

1EDN7511BXUSA1 - 4A/8A Low-Side Gate Driver | Infineon

1EDN7511BXUSA1 βœ“ Active

Specification Comparison

Parameter 1EDN7511BXUSA1 1EDN7126GXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.54 $0.29
Driver Type Low-Side, Single Channel β€”
Number of Channels 1 β€”
Peak Source Current 4 A 1.5 A
Peak Sink Current 8 A 1.5 A
Output Configuration Inverting / Non-Inverting (2 outputs) β€”
Input Logic TTL / CMOS compatible β€”
Propagation Delay [DATA_NEEDED: typical propagation delay in ns] β€”
Delay Matching Β±5 ns β€”
Rise / Fall Time [DATA_NEEDED: rise/fall time into 1 nF load] β€”
Supply Voltage (VCC) [DATA_NEEDED: VCC min/max range] β€”
UVLO Protection Yes β€”
Operating Temperature -40 Β°C to +150 Β°C β€”
Package PG-SOT23-6-2 (6-pin SOT-23) PG-VSON-10-4
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Supported Switch Technologies MOSFET, GaN FET β€”
Function β€” Single-channel TDI gate driver for GaN HEMT and Si MOSFET
Configuration β€” Non-Inverting
Channel Type β€” Single
Driven Supply Voltage β€” [DATA_NEEDED: VCC max value]
Common-Mode Voltage (CMR) β€” 200 V
Input Type β€” Truly Differential Input (TDI)
Propagation Delay (Typ.) β€” [DATA_NEEDED: tpd typical value]
Rise / Fall Time (Typ.) β€” [DATA_NEEDED: tr / tf typical value]
Operating Temperature Range β€” -40C to +125C
Reach β€” Compliant
Input Logic Compatibility β€” 3.3 V / 5 V TTL/CMOS (TDI)

Datasheets & Resources

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