1EDN7511BXUSA1 vs 1EDN7126GXTMA1 Comparison

Detailed side-by-side comparison of 1EDN7511BXUSA1 by Infineon and 1EDN7126GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDN7511BXUSA1 1EDN7126GXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Type Low-Side, Single Channel —
Number of Drivers 1 —
Number of Outputs 1 —
Configuration Inverting, Non-Inverting Non-Inverting
Peak Source Current 4 A 1.5 A
Peak Sink Current 8 A 1.5 A
Rise Time [DATA_NEEDED: rise time ns] —
Fall Time 4.5 ns —
Propagation Delay ±5 ns (matched) —
Operating Supply Voltage [DATA_NEEDED: VCC range V] —
Input Logic Compatibility TTL / CMOS 3.3 V / 5 V TTL/CMOS (TDI)
UVLO Protection Yes (integrated) —
Output Stage True low-impedance complementary rail-to-rail —
Operating Temperature Range -40 C to +150 C -40C to +125C
Package PG-SOT23-6-2 (6-pin SOT-23) PG-VSON-10-4
Mounting Type Surface Mount (SMD/SMT) Surface Mount
Packaging Cut Tape (Tape & Reel available) —
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Function — Single-channel TDI gate driver for GaN HEMT and Si MOSFET
Channel Type — Single
Driven Supply Voltage — [DATA_NEEDED: VCC max value]
Common-Mode Voltage (CMR) — 200 V
Input Type — Truly Differential Input (TDI)
Propagation Delay (Typ.) — [DATA_NEEDED: tpd typical value]
Rise / Fall Time (Typ.) — [DATA_NEEDED: tr / tf typical value]
MSL Level — [DATA_NEEDED: MSL rating]
Reach — Compliant

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