IRFP250MPBF vs IRFP260MPBF 对比

详细并排对比 IRFP250MPBF 出自 Infineon 和 IRFP260MPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFP250MPBF IRFP260MPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.55 $2.85
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFP250MPBF —
晶体管类型 N-Channel MOSFET —
Technology HEXFET (IR MOSFET) MOSFET (Metal Oxide Semiconductor)
Drain-Source Voltage (Vds) 200 V —
Continuous Drain Current (Id) at Tc=25C 30 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] —
Static Drain-Source On-Resistance (RDS(on)) 75 mOhm max @ Vgs=10V —
Gate-Source Threshold Voltage (Vgs(th)) 4 V (typ) —
Total Gate Charge (Qg) 82 nC —
Power Dissipation (Pd) at Tc=25C 214 W —
工作结温 -55C to +175C —
封装 / 外壳 TO-247AC (3-pin + tab) TO-247AC (3-lead through-hole)
安装类型 Through Hole Through Hole
引脚数 3 —
Avalanche Rated Yes Yes
RoHS 状态 Compliant Compliant
Lead-Free Yes Yes
MSL 等级 1 (unlimited) Not Applicable (through-hole)
Part Status — Active
FET Type — N-Channel
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at Tc=25C — 50 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 300 W
On-Resistance RDS(on) max — 40 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th)]
Input Capacitance Ciss — 1560 pF
Total Gate Charge Qg — [DATA_NEEDED: Qg]
工作温度范围 — -55C to +175C

数据手册与资源

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