IRFP250MPBF vs IRFP260MPBF Vergleich
Detaillierter Direktvergleich von IRFP250MPBF von Infineon und IRFP260MPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFP250MPBF | IRFP260MPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,55 | $2,85 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRFP250MPBF | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (Vds) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 75 mOhm max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 4 V (typ) | — |
| Total Gate Charge (Qg) | 82 nC | — |
| Power Dissipation (Pd) at Tc=25C | 214 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse / Bauform | TO-247AC (3-pin + tab) | TO-247AC (3-lead through-hole) |
| Montageart | Through Hole | Through Hole |
| Anzahl der Pins | 3 | — |
| Avalanche Rated | Yes | Yes |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL-Level | 1 (unlimited) | Not Applicable (through-hole) |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 300 W |
| On-Resistance RDS(on) max | — | 40 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th)] |
| Input Capacitance Ciss | — | 1560 pF |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg] |
| Betriebstemperaturbereich | — | -55C to +175C |