IRFP250MPBF vs IRFP260MPBF Comparison

Detailed side-by-side comparison of IRFP250MPBF by Infineon and IRFP260MPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFP250MPBF IRFP260MPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.55 $2.85
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFP250MPBF β€”
Transistor Type N-Channel MOSFET β€”
Technology HEXFET (IR MOSFET) MOSFET (Metal Oxide Semiconductor)
Drain-Source Voltage (Vds) 200 V β€”
Continuous Drain Current (Id) at Tc=25C 30 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] β€”
Static Drain-Source On-Resistance (RDS(on)) 75 mOhm max @ Vgs=10V β€”
Gate-Source Threshold Voltage (Vgs(th)) 4 V (typ) β€”
Total Gate Charge (Qg) 82 nC β€”
Power Dissipation (Pd) at Tc=25C 214 W β€”
Operating Junction Temperature -55C to +175C β€”
Package / Case TO-247AC (3-pin + tab) TO-247AC (3-lead through-hole)
Mounting Type Through Hole Through Hole
Number of Pins 3 β€”
Avalanche Rated Yes Yes
RoHS Status Compliant Compliant
Lead-Free Yes Yes
MSL Level 1 (unlimited) Not Applicable (through-hole)
Part Status β€” Active
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 200 V
Continuous Drain Current (ID) at Tc=25C β€” 50 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C β€” 300 W
On-Resistance RDS(on) max β€” 40 mOhm
Gate Threshold Voltage VGS(th) typ β€” [DATA_NEEDED: VGS(th)]
Input Capacitance Ciss β€” 1560 pF
Total Gate Charge Qg β€” [DATA_NEEDED: Qg]
Operating Temperature Range β€” -55C to +175C

Datasheets & Resources

Browse All Products Create BOM Request Quote