IRFP250MPBF vs IRFP260MPBF Comparación
Comparación detallada lado a lado de IRFP250MPBF por Infineon y IRFP260MPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFP250MPBF | IRFP260MPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,55 | $2,85 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRFP250MPBF | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (Vds) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 75 mOhm max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 4 V (typ) | — |
| Total Gate Charge (Qg) | 82 nC | — |
| Power Dissipation (Pd) at Tc=25C | 214 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Encapsulado / Carcasa | TO-247AC (3-pin + tab) | TO-247AC (3-lead through-hole) |
| Tipo de montaje | Through Hole | Through Hole |
| Número de pines | 3 | — |
| Avalanche Rated | Yes | Yes |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Nivel MSL | 1 (unlimited) | Not Applicable (through-hole) |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 300 W |
| On-Resistance RDS(on) max | — | 40 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th)] |
| Input Capacitance Ciss | — | 1560 pF |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg] |
| Rango de temperatura de funcionamiento | — | -55C to +175C |