IS43TR16256AL-107MBL vs K4B4G1646E-BYMATCV Comparison
Detailed side-by-side comparison of IS43TR16256AL-107MBL by ISSI, Integrated Silicon Solution Inc and K4B4G1646E-BYMATCV by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBL ✓ ActiveSamsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ ActiveSpecification Comparison
| Parameter | IS43TR16256AL-107MBL | K4B4G1646E-BYMATCV |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit | 4 Gbit (256M x 16) |
| Organization | 256M x 16 | — |
| Supply Voltage | 1.35 V | 1.35 V |
| Data Rate | 1866 MT/s | 1866 Mbps |
| Clock Frequency | 933 MHz | — |
| Access Time | 20 ns | — |
| CAS Latency | 13 | Programmable (e.g., 13, 12, 11) |
| Interface | Parallel | — |
| Package | 96-TWBGA (9x13 mm) | 96-ball FBGA |
| Operating Temperature | 0°C to +95°C (case) | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | Compliant | Compliant |
| Burst Length | 8 and 4 (with burst chop) | 8 (with burst chop 4) |
| On-Die Termination | Yes (ODT) | — |
| I/O Voltage (VDDQ) | — | 1.35 V |
| Number of Pins | — | 96 |
| Operating Temperature Range | — | -40°C to +95°C |
| Number of Banks | — | 8 |
| On-Die Termination (ODT) | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |