K4A8G085WB-BIWE vs H5AN8G8NDJR 对比
详细并排对比 K4A8G085WB-BIWE 出自 Samsung Electronics 和 H5AN8G8NDJR 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G085WB-BIWE | H5AN8G8NDJR |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.50 | $24.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gb | — |
| Memory Organization | 1G x 8 | — |
| 数据速率 | 3200 Mbps | 3200 MT/s |
| 电源电压 | 1.2 V | — |
| 工作温度 | 0°C to +85°C | 0°C to +95°C (Tc) |
| 封装 | 78-FBGA | FBGA-78 (7.5x11 mm) |
| 安装类型 | Surface Mount | — |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| CAS 延迟 | [DATA_NEEDED: CL value] | 22 (typical) |
| Refresh | Auto-refresh, self-refresh | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | Yes |
| 无卤 | Yes | — |
| Density | — | 8 Gb |
| 存储组织 | — | 1G x 8 |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VDDQ | — | 1.2 V |
| VPP | — | 2.5 V |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Burst Length | — | 8 and 4 (with burst chop) |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |
| RoHS | — | Compliant |