K4A8G085WB-BIWE vs H5AN8G8NDJR Comparison
Detailed side-by-side comparison of K4A8G085WB-BIWE by Samsung Electronics and H5AN8G8NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB-BIWE | H5AN8G8NDJR |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $24.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | — |
| Memory Organization | 1G x 8 | — |
| Data Rate | 3200 Mbps | 3200 MT/s |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | 0°C to +85°C | 0°C to +95°C (Tc) |
| Package | 78-FBGA | FBGA-78 (7.5x11 mm) |
| Mounting Type | Surface Mount | — |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| CAS Latency | [DATA_NEEDED: CL value] | 22 (typical) |
| Refresh | Auto-refresh, self-refresh | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| Density | — | 8 Gb |
| Organization | — | 1G x 8 |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VDDQ | — | 1.2 V |
| VPP | — | 2.5 V |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Burst Length | — | 8 and 4 (with burst chop) |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |
| RoHS | — | Compliant |