K4A8G085WC-BCTD vs H5AN8G6NAFR-UHC 对比
详细并排对比 K4A8G085WC-BCTD 出自 Samsung Electronics 和 H5AN8G6NAFR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ 最后一次采购
规格对比
| 参数 | K4A8G085WC-BCTD | H5AN8G6NAFR-UHC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 最后采购期 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $50.85 | $5.74 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 存储组织 | 1G x 8 | 512M x 16 |
| 数据速率 | 2666 Mbps (PC4-2133) | 2400 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | — |
| 封装 | 78-ball FBGA (78FBGA) | FBGA-96 |
| Ball Pitch | 0.8 mm | — |
| 工作温度 | 0C to +95C | 0°C to +85°C |
| Standard Operating Temp Range | 0C to +85C | — |
| Burst Length | 8 (chop 4) | 8, 4 (with burst chop) |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| 接口类型 | Synchronous, parallel | — |
| 安装类型 | Surface Mount | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | — |
| 电源电压 | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Code | — | TFBGA |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |
| RoHS Compliant | — | Yes |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| Refresh | — | Auto self-refresh |