K4A8G085WC-BCTD vs H5AN8G6NAFR-UHC Comparison
Detailed side-by-side comparison of K4A8G085WC-BCTD by Samsung Electronics and H5AN8G6NAFR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Last Time Buy
Specification Comparison
| Parameter | K4A8G085WC-BCTD | H5AN8G6NAFR-UHC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Last Time Buy | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (CMOS) |
| Density | 8 Gb | — |
| Organization | 1G x 8 | 512M x 16 |
| Data Rate | 2666 Mbps (PC4-2133) | 2400 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | — |
| Package | 78-ball FBGA (78FBGA) | 96-ball FBGA (TFBGA) |
| Ball Pitch | 0.8 mm | — |
| Operating Temperature | 0C to +95C | 0C to +85C |
| Standard Operating Temp Range | 0C to +85C | — |
| Burst Length | 8 (chop 4) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | DM function supported |
| Interface Type | Synchronous, parallel | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Memory Density | — | 8 Gbit |
| Supply Voltage | — | 1.2 V |
| Clock Architecture | — | Differential clock (CK_t / CK_c), fully synchronous |
| Refresh | — | Auto self-refresh |
| Precharge | — | Auto precharge function |
| Reset | — | Asynchronous reset function |
| Termination | — | Dynamic on-chip termination (ODT) |
| Calibration | — | ZQ calibration function |
| Error Checking | — | CRC function |
| Write Leveling | — | Write leveling function supported |