K4A8G085WC-BCTD vs H5AN8G6NAFR-UHC Comparison
Detailed side-by-side comparison of K4A8G085WC-BCTD by Samsung Electronics and H5AN8G6NAFR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC-BCTD
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD β Last Time BuySK hynix
H5AN8G6NAFR-UHC
H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix
H5AN8G6NAFR-UHC β ActiveSpecification Comparison
| Parameter | K4A8G085WC-BCTD | H5AN8G6NAFR-UHC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Last_time_buy | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $50.85 | $0.12 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 512M x 16 |
| Data Rate | 2666 Mbps (PC4-2133) | 2400 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | β |
| Package | 78-ball FBGA (78FBGA) | FBGA-96 |
| Ball Pitch | 0.8 mm | β |
| Operating Temperature | 0C to +95C | 0Β°C to +85Β°C |
| Standard Operating Temp Range | 0C to +85C | β |
| Burst Length | 8 (chop 4) | 8, 4 (with burst chop) |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| CRC Function | Yes | β |
| ZQ Calibration | Yes | β |
| Dynamic ODT | Yes | β |
| Data Mask | Yes | β |
| Interface Type | Synchronous, parallel | β |
| Mounting Type | Surface Mount | β |
| RoHS Status | [DATA_NEEDED: RoHS status] | β |
| Supply Voltage | β | 1.2 V |
| Number of Terminals | β | 96 |
| Package Code | β | TFBGA |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| RoHS Compliant | β | Yes |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Refresh | β | Auto self-refresh |