H5CG46MEBDX017N - 16Gb DDR5 4800Mbps DRAM | SK hynix
料号： H5CG46MEBDX017N ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $5.8 | $5.80 |
| 10 | $5.35 | $53.50 |
| 100 | $4.85 | $485.00 |
| 500 | $4.45 | $2,225.00 |
| 1,000 | $4.1 | $4,100.00 |
H5CG46MEBDX017N 概述
DDR5 SDRAM is the fifth generation of double data rate synchronous DRAM, a memory IC category that stores working data for processors in computing systems. In the memory hierarchy, DDR5 DRAM sits at the main-system-memory level, feeding CPUs, SoCs, and embedded controllers that require high bandwidth and large capacity. Compared with DDR4, DDR5 doubles the bank groups, moves power management on-die (PMIC), and reduces operating voltage to 1.1V, cutting power roughly 20% per bit transferred.
Key features of the H5CG46MEBDX017N include a 16 Gbit density organized as 1 Gbit x 16, a 4800 Mbps/pin data rate supporting DDR5-4800 modules and platforms, and the low 1.1 V VDD rail that lowers total platform power. The device follows the JEDEC DDR5 architecture with on-die ECC support, decision-feedback equalization (DFE), and bank-group parallelism for higher effective bandwidth. The FCBGA package provides short flip-chip interconnects that improve signal integrity at high data rates.
Architecturally, this part belongs to SK hynix's DDR5 family (H5CG46 series), where 'E' denotes x16 organization and 'M' indicates the DDR5-4800 speed bin (AGBD variants in the same family are DDR5-5600). Like all DDR5 devices, it integrates a PMIC interface, on-die termination, and a 1T1C DRAM cell array with internal bank groups supporting concurrent access.
Typical applications include desktop and notebook PC main memory modules (UDIMM/SODIMM), embedded computing modules, industrial controllers, networking equipment, and firmware/data buffering in storage systems. The x16 organization suits compact or cost-sensitive designs that need a narrow 16-bit bus per device.
Design considerations: DDR5 signaling requires length-matched fly-by routing, on-die termination configuration via mode registers, and careful VDDQ (1.1V) rail decoupling. Verify the speed bin (4800 Mbps) against your memory controller's training capability and platform JEDEC DDR5-4800 support.
This page synthesizes verified distributor stock data, same-family drop-in speed/density variants, pinout guidance, and procurement FAQs not consolidated in the manufacturer datasheet.
直接替换替代料： H5CG46MEBDX017N ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5CG46MEBDX017N （相同外形与封装尺寸） ——差异在于 Data Rate, Interface, Interface Type, Package, RoHS Status.
快速对比工具——选择替代料号进行并排对比：
H5CG46MEBDX015N
✅ 直接替换✓ 有现货
$3.65 / 个
查看数据手册 →H5CG46AGBDX017N
✅ 直接替换✓ 有现货
$91.73 / 个
查看数据手册 →H5CG46AGBDX017
✅ 直接替换✓ 有现货
$92.1 / 个
查看数据手册 →H5CG46AGBDX015
✅ 直接替换✓ 有现货
$4.95 / 个
查看数据手册 →H5CG46MEBDX017N 最大额定值与电气特性
| 存储器类型 | DDR5 SDRAM |
| Density | 16 Gbit |
| 存储组织 | 1G x 16 |
| 数据速率 | 4800 Mbps/pin |
| Speed Grade | DDR5-4800 |
| VDD Supply Voltage | 1.1 V |
| VDDQ Supply Voltage | 1.1 V |
| 接口类型 | DDR5 (synchronous, double data rate) |
| Package Type | FCBGA (flip-chip ball grid array) |
| 安装类型 | Surface Mount |
| On-Die ECC | Yes (DDR5 standard feature) |
| Bank Groups | DDR5 architecture (8 bank groups) |
| Part Family | H5CG46 series |
| Manufacturer Status | MP (mass production) |
H5CG46MEBDX017N fcbga (flip-chip ball grid array) 引脚配置指南
H5CG46MEBDX017N（fcbga (flip-chip ball grid array) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： H5CG46MEBDX017N.
请参阅 数据手册 以查看完整引脚配置。
典型应用
H5CG46MEBDX017N 适用于 6 应用s: PC Main Memory (UDIMM/SODIMM Modules), Industrial Controllers and Automation, Embedded Computing Modules (COM/SoM), Networking and Communication Equipment, Storage and SSD Controller Buffering, Embedded Logging and Firmware Systems.
PC Main Memory (UDIMM/SODIMM Modules)
The H5CG46MEBDX017N is a JEDEC-standard DDR5 component designed for desktop and notebook main-memory modules. Its 16 Gbit density in x16 organization allows module builders to reach 16 GB on a UDIMM with eight x16 devices or to build high-capacity SODIMMs for laptops. At 4800 Mbps/pin, it meets the DDR5-4800 profile used by current Intel and AMD client memory controllers, and the 1.1 V rail combined with on-module PMIC keeps power within client thermal budgets. SK hynix developed the industry's first JEDEC-compliant DDR5 DRAM, making this family a first-choice component for module ODMs. Devices are mounted on the fly-by address/command bus with per-byte data lanes; the on-die ECC improves module-level reliability versus DDR4 at the same density.
推荐
Industrial Controllers and Automation
Industrial controllers, PLCs, and factory-automation compute modules need dependable, high-bandwidth main memory with long lifecycle support. The H5CG46MEBDX017N provides 16 Gbit of DDR5 in a compact FCBGA footprint, and its x16 organization allows 16-bit or 32-bit buses that simplify layout on space-constrained controller boards. The 1.1 V supply reduces heat inside sealed industrial enclosures, and DDR5's on-die ECC raises data integrity for process-critical logging and control loops. Its mass-production status and wide distribution channel availability (tens of thousands of pcs in distributor stock per Octopart data) support multi-year procurement programs. Designers should verify the industrial temperature range requirement against the datasheet speed/temperature tables before qualification.
推荐
Embedded Computing Modules (COM/SoM)
Computer-on-Module and System-on-Module vendors use x16 DDR5 components like the H5CG46MEBDX017N on soldered-down memory designs where SODIMM sockets are impractical. The FCBGA package supports standard SMT reflow on the carrier board or module PCB, and the 1G x 16 organization lets a COM pair four devices for a 64-bit bus at 16 GB capacity or two devices for a cost-optimized 32-bit bus. At DDR5-4800 the bus provides the bandwidth needed for edge AI inference and video pipelines in embedded platforms. The 1.1 V VDDQ rail simplifies power-tree design with common buck regulators. DDR5 training is handled by the host SoC memory controller during boot, with mode-register programming per the SK hynix device operation document.
推荐
Networking and Communication Equipment
Switches, routers, and 5G baseband cards rely on large, fast main memory for packet buffering, route tables, and control-plane software. The H5CG46MEBDX017N supplies 16 Gbit per device at 4800 Mbps, and multiple devices populate to reach the 8 GB to 32 GB capacities typical of access and aggregation equipment. DDR5's eight bank groups allow concurrent access that improves effective bandwidth for the mixed read/write traffic patterns in network workloads, while on-die ECC protects against soft errors in always-on telecom environments. The 1.1 V rail reduces the power budget in fanless outdoor and edge-network hardware. High-speed routing should follow DDR5 fly-by topology with strict length matching on data byte lanes.
推荐
Storage and SSD Controller Buffering
Enterprise SSDs and storage controllers use DRAM for FTL (flash translation layer) mapping tables and write buffering, where capacity per watt matters. The H5CG46MEBDX017N offers 16 Gbit in a single x16 device, letting a controller attach a 32-bit bus with just two packages, saving board area inside 2.5-inch, M.2, and U.2 form factors. At DDR5-4800 the interface keeps mapping-table updates from becoming the bottleneck on high-IOPS NVMe designs. The 1.1 V operation lowers the drive's idle power, which is a key metric for datacenter TCO, and on-die ECC complements controller-level ECC schemes for end-to-end data protection. DRAM-less designs can also use this component in hybrid caching tiers.
推荐
Embedded Logging and Firmware Systems
Data loggers, gateways, and firmware-heavy embedded systems need working memory for boot code execution, runtime logging, and analytics buffers. The H5CG46MEBDX017N's 16 Gbit capacity accommodates Linux-class firmware with headroom for logging and telemetry accumulation, while the x16 organization minimizes component count on cost-sensitive boards. DDR5-4800 bandwidth accelerates firmware decompression and OTA update staging compared to DDR4-based predecessors, and the low 1.1 V rail suits battery-backed and energy-harvesting logging nodes. The part's mass-production lifecycle status from SK hynix supports the long design-in windows typical of logging and metering products, which often ship for a decade after launch.
推荐
推荐产品汇总
工程参考数据： H5CG46MEBDX017N ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5CG46MEBDX015N | H5CG46AGBDX017N | H5CG46AGBDX017 | H5CG46AGBDX015 |
|---|---|---|---|---|---|
| Package | FCBGA | FCBGA - same | FCBGA - same | FCBGA - same | FCBGA - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 |
| Data Rate | 4800 Mbps/pin | 4800 Mbps/pin | 5600 Mbps/pin | 5600 Mbps/pin | 5600 Mbps/pin |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
关键差异点
- DDR5-4800 speed bin at lowest family cost （对比 H5CG46AGBDX017N)
- Identical die as alternate test bins for dual sourcing （对比 H5CG46MEBDX015N)
- x16 organization minimizes component count （对比 H5CG48MEBDX014N (x8))
设计说明
At 4800 Mbps/pin, DDR5 data strobes (DQS) and data lines require precise length matching - typically within +/-25 mil intra-byte-lane skew on standard FR-4. Use fly-by routing for address/command lines with series termination per the SK hynix DDR5 design guide, and configure on-die termination (ODT) values via mode registers MR11/MR22 through memory-controller training. Simulate eye diagrams at the package ball level including the FCBGA via transitions, since flip-chip interconnects introduce low but non-zero inductance that affects SI margins at the DDR5-4800 operating point.
The H5CG46MEBDX017N operates from 1.1 V VDD/VDDQ rails. Decouple each device with a network of low-ESR ceramic capacitors (mix of 100 nF and 10 uF) placed within 2-3 mm of the ball exits, plus bulk capacitance per the platform PDN design. Estimate peak current: at 4800 Mbps x 16 lanes with toggling rates typical of DDR5, per-device peak current can reach several hundred mA during bursts, so design the 1.1 V buck regulator and its layout for transient response. Unlike DDR4, DDR5 moves PMIC functions to the module - component-level designs must supply clean 1.1 V directly.
Do not assume all suffix variants are interchangeable without checking the speed bin: H5CG46AGBDX017N parts are DDR5-5600 while this MEBD part is DDR5-4800, and mixing bins on the same bus forces the whole channel to the slowest device's timing. Also verify the host memory controller supports DDR5 training and mode-register programming for this generation of die. Procurement teams should confirm suffix compatibility (015N vs 017N test bins) with their controller vendor's memory support list before qualifying alternate SK hynix suffixes for volume production.
合规信息
Verified web data does not include explicit RoHS/REACH/environmental certificates for this MPN. SK hynix DDR5 production parts are generally RoHS-compliant and lead-free as standard practice, but confirm via manufacturer material declaration before procurement sign-off.
