K4B4G1646Q - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
料号： K4B4G1646Q ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.2 | $720.00 |
| 500 | $6.8 | $3,400.00 |
| 1,000 | $6.5 | $6,500.00 |
K4B4G1646Q 概述
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a reduced I/O voltage of 1.35V, compared to standard DDR3's 1.5V. This lower voltage reduces power consumption by approximately 15-20%, making it ideal for power-sensitive devices such as laptops, servers, and industrial systems. DDR3L is part of the DDR3 memory family, which uses an 8n-prefetch architecture to achieve high data rates, and is a predecessor to DDR4.
Key features of the K4B4G1646Q include a 16-bit data bus, a data rate of up to 1866 Mbps (PC3-14900), and a 96-ball FBGA package. It is lead-free and halogen-free, and RoHS compliant. The device supports a burst length of 8 (BL8) and on-die termination (ODT) for improved signal integrity. It also features programmable CAS latency and additive latency, allowing system designers to optimize performance.
Technically, the K4B4G1646Q uses Samsung's Q-die process technology, which is a 20nm-class DRAM process. This advanced process node enables higher density and lower power consumption compared to older D-die or E-die variants. The device includes an internal temperature sensor for self-refresh rate control, which helps manage power in thermally constrained environments.
Typical applications include main memory for laptops and ultrabooks, embedded systems, networking equipment, and industrial PCs. Its low voltage and high density make it suitable for designs where power efficiency and board space are critical.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins, and follow the layout guidelines in the datasheet for the 96-ball FBGA package to maintain signal integrity at high data rates.
直接替换替代料： K4B4G1646Q ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4B4G1646Q （相同外形与封装尺寸） ——差异在于 Package, Supply Voltage, Data Rate, Operating Temperature, CAS Latency.
快速对比工具——选择替代料号进行并排对比：
K4B4G1646E-BYK0
✅ 直接替换✓ 有现货
$1.8 / 个
查看数据手册 →K4B4G1646D-BCK00
✅ 直接替换✓ 有现货
$5.9 / 个
查看数据手册 →K4B4G1646D-BMK0
✅ 直接替换✓ 有现货
$5.9 / 个
查看数据手册 →MT41K256M16HA-125
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.3636 / 个
查看数据手册 →MT41K256M16TW-093
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$15.5 / 个
查看数据手册 →IS43TR16256AL-125KBL
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$5.6 / 个
查看数据手册 →K4B4G1646Q 最大额定值与电气特性
| 存储器类型 | DDR3L SDRAM |
| Density | 4Gb |
| 存储组织 | 256M x 16 |
| 数据总线宽度 | 16 bits |
| 电源电压 | 1.35V |
| 数据速率 | 1866 Mbps (PC3-14900) |
| 封装 | 96-ball FBGA |
| Die | Q-die |
| Lead-Free | Yes |
| 无卤 | Yes |
| RoHS Compliant | Yes |
| Burst Length | 8 (BL8) |
| On-Die Termination | Yes (ODT) |
| CAS 延迟 | Programmable |
K4B4G1646Q 引脚配置
| 引脚 A1 | VDD — Power supply |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 B1 | VSS — Ground |
| 引脚 B2 | DQ2 — Data input/output 2 |
| 引脚 B3 | DQ3 — Data input/output 3 |
| 引脚 C1 | VDDQ — I/O power supply |
| 引脚 C2 | DQ4 — Data input/output 4 |
| 引脚 C3 | DQ5 — Data input/output 5 |
| 引脚 D1 | VSSQ — I/O ground |
| 引脚 D2 | DQ6 — Data input/output 6 |
| 引脚 D3 | DQ7 — Data input/output 7 |
典型应用
K4B4G1646Q 适用于 6 应用s: Laptop and Ultrabook Main Memory, Embedded Systems, Networking Equipment, Industrial PCs, Servers and Data Centers, Consumer Electronics.
Laptop and Ultrabook Main Memory
The K4B4G1646Q's low 1.35V operation and 4Gb density make it ideal for laptop and ultrabook main memory. Its 16-bit bus width allows for flexible memory configurations, and the 96-ball FBGA package saves board space. The low power consumption extends battery life, while the 1866 Mbps data rate ensures responsive performance for everyday computing tasks.
推荐
Embedded Systems
In embedded systems, the K4B4G1646Q provides a balance of capacity and power efficiency. Its 4Gb density is sufficient for running operating systems and applications, while the 1.35V supply reduces thermal output. The 96-ball FBGA package is suitable for compact PCB designs, and the device's RoHS compliance meets environmental standards for industrial and consumer products.
推荐
Networking Equipment
The K4B4G1646Q is well-suited for networking equipment such as routers and switches, where high data throughput and reliability are critical. Its 1866 Mbps data rate supports fast packet processing, and the low voltage helps manage power in densely packed chassis. The device's on-die termination improves signal integrity, reducing errors in high-speed data transmission.
推荐
Industrial PCs
For industrial PCs, the K4B4G1646Q offers reliable performance in harsh environments. Its 4Gb capacity supports demanding applications like machine vision and process control, while the 1.35V operation reduces heat generation. The 96-ball FBGA package is robust and suitable for industrial-grade PCBs, and the device's long lifecycle ensures availability for long-term projects.
推荐
Servers and Data Centers
In servers and data centers, the K4B4G1646Q provides a cost-effective memory solution for entry-level servers. Its 4Gb density and 16-bit bus allow for flexible memory configurations, and the low voltage helps reduce overall power consumption. The device's high data rate supports virtualization and cloud computing workloads, making it a practical choice for budget-conscious deployments.
推荐
Consumer Electronics
The K4B4G1646Q is used in consumer electronics like smart TVs and set-top boxes, where low power and compact size are important. Its 4Gb capacity supports multimedia applications, and the 1.35V supply minimizes energy consumption. The 96-ball FBGA package enables slim device designs, and the device's RoHS compliance aligns with consumer product regulations.
推荐
推荐产品汇总
工程参考数据： K4B4G1646Q ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4B4G1646E-BYK0 | K4B4G1646D-BCK00 | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| RoHS Compliant | Yes | Yes | Yes | Yes |
关键差异点
- Q-die process technology （对比 K4B4G1646D-BCK00)
- Low voltage operation （对比 MT41K256M16HA-125)
- Same-brand availability （对比 MT41K256M16HA-125)
设计说明
The K4B4G1646Q operates at 1.35V, which is lower than standard DDR3's 1.5V. Ensure the power supply can provide a stable 1.35V rail with adequate decoupling. Use multiple 0.1uF ceramic capacitors near the VDD and VDDQ pins to filter high-frequency noise, and a bulk capacitor (e.g., 10uF) for transient currents.
For the 96-ball FBGA package, follow the layout guidelines in the datasheet. Maintain controlled impedance for the data and address lines, typically 50 ohms single-ended and 100 ohms differential. Keep the trace lengths matched to minimize skew, and place the device close to the controller to reduce signal degradation.
Ensure the memory controller is configured for DDR3L (1.35V) operation, not standard DDR3 (1.5V), to avoid damage. Also, verify the speed grade matches the system requirements. Incorrect termination settings can cause signal integrity issues, so use the on-die termination (ODT) features as specified in the datasheet.
合规信息
RoHS compliant, lead-free, and halogen-free per datasheet. REACH and conflict minerals status not specified in the provided data.
