K4B4G1646Q - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
Référence : K4B4G1646Q ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3 400,00 |
| 1 000 | $6.5 | $6 500,00 |
K4B4G1646Q Présentation
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a reduced I/O voltage of 1.35V, compared to standard DDR3's 1.5V. This lower voltage reduces power consumption by approximately 15-20%, making it ideal for power-sensitive devices such as laptops, servers, and industrial systems. DDR3L is part of the DDR3 memory family, which uses an 8n-prefetch architecture to achieve high data rates, and is a predecessor to DDR4.
Key features of the K4B4G1646Q include a 16-bit data bus, a data rate of up to 1866 Mbps (PC3-14900), and a 96-ball FBGA package. It is lead-free and halogen-free, and RoHS compliant. The device supports a burst length of 8 (BL8) and on-die termination (ODT) for improved signal integrity. It also features programmable CAS latency and additive latency, allowing system designers to optimize performance.
Technically, the K4B4G1646Q uses Samsung's Q-die process technology, which is a 20nm-class DRAM process. This advanced process node enables higher density and lower power consumption compared to older D-die or E-die variants. The device includes an internal temperature sensor for self-refresh rate control, which helps manage power in thermally constrained environments.
Typical applications include main memory for laptops and ultrabooks, embedded systems, networking equipment, and industrial PCs. Its low voltage and high density make it suitable for designs where power efficiency and board space are critical.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins, and follow the layout guidelines in the datasheet for the 96-ball FBGA package to maintain signal integrity at high data rates.
Alternatives de remplacement direct pour K4B4G1646Q — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4B4G1646Q (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, Data Rate, Operating Temperature, CAS Latency.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4B4G1646E-BYK0
✅ Remplacement direct✓ En stock
$1.8 / unité
Voir la fiche technique →K4B4G1646D-BCK00
✅ Remplacement direct✓ En stock
$5.9 / unité
Voir la fiche technique →K4B4G1646D-BMK0
✅ Remplacement direct✓ En stock
$5.9 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →MT41K256M16TW-093
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$15.5 / unité
Voir la fiche technique →IS43TR16256AL-125KBL
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$5.6 / unité
Voir la fiche technique →K4B4G1646Q Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4Gb |
| Organisation de la mémoire | 256M x 16 |
| Largeur du bus de données | 16 bits |
| Tension d'alimentation | 1.35V |
| Débit de données | 1866 Mbps (PC3-14900) |
| Boîtier | 96-ball FBGA |
| Die | Q-die |
| Lead-Free | Yes |
| Sans halogène | Yes |
| RoHS Compliant | Yes |
| Burst Length | 8 (BL8) |
| On-Die Termination | Yes (ODT) |
| Latence CAS | Programmable |
Configuration des broches de K4B4G1646Q
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — I/O ground |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
Applications typiques
K4B4G1646Q convient pour 6 applications: Laptop and Ultrabook Main Memory, Embedded Systems, Networking Equipment, Industrial PCs, Servers and Data Centers, Consumer Electronics.
Laptop and Ultrabook Main Memory
The K4B4G1646Q's low 1.35V operation and 4Gb density make it ideal for laptop and ultrabook main memory. Its 16-bit bus width allows for flexible memory configurations, and the 96-ball FBGA package saves board space. The low power consumption extends battery life, while the 1866 Mbps data rate ensures responsive performance for everyday computing tasks.
Recommandé
Embedded Systems
In embedded systems, the K4B4G1646Q provides a balance of capacity and power efficiency. Its 4Gb density is sufficient for running operating systems and applications, while the 1.35V supply reduces thermal output. The 96-ball FBGA package is suitable for compact PCB designs, and the device's RoHS compliance meets environmental standards for industrial and consumer products.
Recommandé
Networking Equipment
The K4B4G1646Q is well-suited for networking equipment such as routers and switches, where high data throughput and reliability are critical. Its 1866 Mbps data rate supports fast packet processing, and the low voltage helps manage power in densely packed chassis. The device's on-die termination improves signal integrity, reducing errors in high-speed data transmission.
Recommandé
Industrial PCs
For industrial PCs, the K4B4G1646Q offers reliable performance in harsh environments. Its 4Gb capacity supports demanding applications like machine vision and process control, while the 1.35V operation reduces heat generation. The 96-ball FBGA package is robust and suitable for industrial-grade PCBs, and the device's long lifecycle ensures availability for long-term projects.
Recommandé
Servers and Data Centers
In servers and data centers, the K4B4G1646Q provides a cost-effective memory solution for entry-level servers. Its 4Gb density and 16-bit bus allow for flexible memory configurations, and the low voltage helps reduce overall power consumption. The device's high data rate supports virtualization and cloud computing workloads, making it a practical choice for budget-conscious deployments.
Recommandé
Consumer Electronics
The K4B4G1646Q is used in consumer electronics like smart TVs and set-top boxes, where low power and compact size are important. Its 4Gb capacity supports multimedia applications, and the 1.35V supply minimizes energy consumption. The 96-ball FBGA package enables slim device designs, and the device's RoHS compliance aligns with consumer product regulations.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4B4G1646Q — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4B4G1646E-BYK0 | K4B4G1646D-BCK00 | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| RoHS Compliant | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Q-die process technology (vs K4B4G1646D-BCK00)
- Low voltage operation (vs MT41K256M16HA-125)
- Same-brand availability (vs MT41K256M16HA-125)
Notes de conception
The K4B4G1646Q operates at 1.35V, which is lower than standard DDR3's 1.5V. Ensure the power supply can provide a stable 1.35V rail with adequate decoupling. Use multiple 0.1uF ceramic capacitors near the VDD and VDDQ pins to filter high-frequency noise, and a bulk capacitor (e.g., 10uF) for transient currents.
For the 96-ball FBGA package, follow the layout guidelines in the datasheet. Maintain controlled impedance for the data and address lines, typically 50 ohms single-ended and 100 ohms differential. Keep the trace lengths matched to minimize skew, and place the device close to the controller to reduce signal degradation.
Ensure the memory controller is configured for DDR3L (1.35V) operation, not standard DDR3 (1.5V), to avoid damage. Also, verify the speed grade matches the system requirements. Incorrect termination settings can cause signal integrity issues, so use the on-die termination (ODT) features as specified in the datasheet.
Informations de conformité
RoHS compliant, lead-free, and halogen-free per datasheet. REACH and conflict minerals status not specified in the provided data.
