NT5AD512M16A4-GZ - 8Gb DDR4 SDRAM 512Mx16 | Nanya
Référence : NT5AD512M16A4-GZ ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.7 | $12,70 |
| 10 | $11.5 | $115,00 |
| 100 | $10.2 | $1 020,00 |
| 500 | $9.1 | $4 550,00 |
| 1 000 | $8.5 | $8 500,00 |
NT5AD512M16A4-GZ Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and embedded systems, offering higher bandwidth and lower power consumption than its predecessors. DDR4 operates at lower voltages (1.2V) and supports higher densities, enabling larger memory capacities in compact form factors.
Key features of the NT5AD512M16A4-GZ include a maximum clock frequency of 1200 MHz (DDR4-2400), a 16-bit data bus, and support for interleaved burst lengths of 4 and 8. It incorporates advanced functions such as auto self-refresh, a built-in temperature sensor, auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check), data mask, write leveling, and ZQ calibration. These features enhance signal integrity, reliability, and ease of use in high-speed systems.
The device is designed for commercial and industrial temperature ranges, ensuring reliable operation in demanding environments. It is RoHS compliant and lead-free, meeting environmental standards. The 96-ball TFBGA package provides a compact footprint with excellent thermal and electrical performance, suitable for space-constrained PCB designs.
Typical applications include enterprise servers, data centers, networking equipment, industrial automation, and advanced driver assistance systems (ADAS). The high density and bandwidth make it ideal for memory-intensive tasks such as real-time data processing, AI inference, and high-performance computing.
When designing with this DDR4 SDRAM, ensure proper termination and signal integrity practices are followed, including matched trace lengths and appropriate on-die termination (ODT) settings. The ZQ calibration pin must be connected to a 240-ohm resistor to ground for proper impedance calibration. Additionally, the VTT and VREF supplies should be decoupled with capacitors to minimize noise.
Alternatives de remplacement direct pour NT5AD512M16A4-GZ — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5AD512M16A4-GZ (même facteur de forme et même empreinte) — différant par Package, Data Rate, Operating Temperature Range, Supply Voltage, Density.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5AD512M16C4-JRI
✅ Remplacement direct✓ En stock
$75.58 / unité
Voir la fiche technique →NT5AD512M16A4-HR
✅ Remplacement direct✓ En stock
$8.1 / unité
Voir la fiche technique →NT5AD512M16
✅ Remplacement direct✓ En stock
$73.75 / unité
Voir la fiche technique →MT40A512M16JY-075E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$30.5 / unité
Voir la fiche technique →K4A8G165WB-BCWE
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.55 / unité
Voir la fiche technique →H5AN8G6NDJR
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$35 / unité
Voir la fiche technique →NT5AD512M16A4-GZ Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Organisation de la mémoire | 512M x 16 |
| Density | 8Gb |
| Tension d'alimentation | 1.2V |
| Fréquence d'horloge maximale | 1200 MHz |
| Largeur du bus de données | 16 bits |
| Boîtier | TFBGA-96 |
| Number of Terminals | 96 |
| Interleaved Burst Length | 4, 8 |
| Access Mode | Four Bank Page Burst |
| Plage de température de fonctionnement | Commercial and Industrial |
| RoHS | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| CRC Function | Yes |
| Data Mask Function | Yes |
| Write Leveling Function | Yes |
| ZQ Calibration Function | Yes |
Configuration des broches de NT5AD512M16A4-GZ
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — Power supply for output buffers |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — Ground for output buffers |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
| Broche E1 | VDD — Power supply |
| Broche E2 | DQS0 — Data strobe 0 |
| Broche E3 | DQS0# — Data strobe 0 complement |
| Broche F1 | VSS — Ground |
| Broche F2 | DM0 — Data mask 0 |
| Broche F3 | VDDQ — Power supply for output buffers |
| Broche G1 | VSSQ — Ground for output buffers |
| Broche G2 | CK — Clock input |
| Broche G3 | CK# — Clock input complement |
| Broche H1 | VDD — Power supply |
| Broche H2 | CKE — Clock enable |
| Broche H3 | CS# — Chip select |
| Broche J1 | VSS — Ground |
| Broche J2 | RAS# — Row address strobe |
| Broche J3 | CAS# — Column address strobe |
| Broche K1 | VDDQ — Power supply for output buffers |
| Broche K2 | WE# — Write enable |
| Broche K3 | A0 — Address input 0 |
| Broche L1 | VSSQ — Ground for output buffers |
| Broche L2 | A1 — Address input 1 |
| Broche L3 | A2 — Address input 2 |
| Broche M1 | VDD — Power supply |
| Broche M2 | A3 — Address input 3 |
| Broche M3 | A4 — Address input 4 |
| Broche N1 | VSS — Ground |
| Broche N2 | A5 — Address input 5 |
| Broche N3 | A6 — Address input 6 |
| Broche P1 | VDDQ — Power supply for output buffers |
| Broche P2 | A7 — Address input 7 |
| Broche P3 | A8 — Address input 8 |
| Broche R1 | VSSQ — Ground for output buffers |
| Broche R2 | A9 — Address input 9 |
| Broche R3 | A10/AP — Address input 10 / Auto precharge |
| Broche T1 | VDD — Power supply |
| Broche T2 | A11 — Address input 11 |
| Broche T3 | A12/BC# — Address input 12 / Burst chop |
| Broche U1 | VSS — Ground |
| Broche U2 | A13 — Address input 13 |
| Broche U3 | A14 — Address input 14 |
| Broche V1 | VDDQ — Power supply for output buffers |
| Broche V2 | A15 — Address input 15 |
| Broche V3 | BA0 — Bank address 0 |
| Broche W1 | VSSQ — Ground for output buffers |
| Broche W2 | BA1 — Bank address 1 |
| Broche W3 | BA2 — Bank address 2 |
| Broche Y1 | VDD — Power supply |
| Broche Y2 | BG0 — Bank group 0 |
| Broche Y3 | BG1 — Bank group 1 |
| Broche AA1 | VSS — Ground |
| Broche AA2 | ACT# — Activate command |
| Broche AA3 | PAR — Parity input |
| Broche AB1 | VDDQ — Power supply for output buffers |
| Broche AB2 | ALERT# — Alert output |
| Broche AB3 | RESET# — Reset input |
| Broche AC1 | VSSQ — Ground for output buffers |
| Broche AC2 | TEN — Temperature sensor enable |
| Broche AC3 | ZQ — Calibration reference |
| Broche AD1 | VDD — Power supply |
| Broche AD2 | VREFCA — Reference voltage for command/address |
| Broche AD3 | VTT — Termination voltage |
Applications typiques
NT5AD512M16A4-GZ convient pour 6 applications: Enterprise Servers, Data Center & Enterprise Computing, Networking Equipment, Industrial Automation, Automotive ADAS, Consumer Electronics.
Enterprise Servers
The NT5AD512M16A4-GZ provides high-density, high-bandwidth memory for enterprise servers, supporting virtualization, database management, and cloud computing. Its 8Gb density and DDR4-2400 speed enable fast data access and large memory pools, improving overall system performance. The 1.2V operation reduces power consumption, lowering total cost of ownership in data centers.
Recommandé
Data Center & Enterprise Computing
In data centers, the NT5AD512M16A4-GZ supports high-performance computing, AI inference, and big data analytics. Its high bandwidth and low latency are critical for processing large datasets. The device's industrial temperature range ensures reliable operation in demanding environments. The built-in temperature sensor and auto self-refresh enhance data integrity and power efficiency.
Recommandé
Networking Equipment
The NT5AD512M16A4-GZ is ideal for networking equipment such as routers, switches, and firewalls, where high-speed packet processing and large routing tables require substantial memory. Its 8Gb density and DDR4-2400 speed provide the necessary bandwidth for line-rate forwarding. The compact TFBGA package saves PCB space, and the low 1.2V supply reduces heat generation in dense chassis.
Recommandé
Industrial Automation
In industrial automation, the NT5AD512M16A4-GZ provides reliable memory for PLCs, robotics, and machine vision systems. Its industrial temperature range ensures operation in harsh environments. The device's CRC and data mask functions improve data integrity in noisy industrial settings. The 1.2V operation reduces power consumption, which is beneficial for energy-efficient factory floors.
Recommandé
Automotive ADAS
The NT5AD512M16A4-GZ is used in automotive advanced driver assistance systems (ADAS) for real-time sensor fusion and decision making. Its high bandwidth supports processing of camera, radar, and LiDAR data. The device's industrial temperature range is suitable for automotive environments. The built-in temperature sensor and auto self-refresh enhance reliability in varying thermal conditions.
Recommandé
Consumer Electronics
The NT5AD512M16A4-GZ can be used in high-end consumer electronics such as gaming consoles, set-top boxes, and smart TVs, where high memory bandwidth is needed for graphics and multimedia. Its 8Gb density allows for smooth multitasking and fast app loading. The low 1.2V supply helps extend battery life in portable devices, and the compact TFBGA package fits slim designs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5AD512M16A4-GZ — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5AD512M16C4-JRI | MT40A512M16JY-075E | K4A8G165WB-BCWE |
|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Industrial temperature range support (vs MT40A512M16JY-075E)
- Same-brand availability (vs K4A8G165WB-BCWE)
- Built-in temperature sensor (vs H5AN8G6NDJR)
Notes de conception
For DDR4 routing, maintain matched trace lengths for DQ, DQS, and address/command signals to ensure signal integrity. Use controlled impedance traces (typically 40-50 ohms single-ended, 80-100 ohms differential) and provide proper termination for VTT. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin to minimize power supply noise.
The NT5AD512M16A4-GZ operates over commercial and industrial temperature ranges. Ensure adequate airflow or heatsinking in high-ambient-temperature environments. The TFBGA package has a low thermal resistance, but power dissipation should be considered. Monitor the built-in temperature sensor to implement thermal throttling if necessary.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for proper impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Also, ensure VREFCA and VTT are properly decoupled to avoid reference voltage noise, which can cause data errors.
Informations de conformité
RoHS compliant and lead-free as per distributor listings. AEC-Q100 not applicable as this is a memory IC, not an automotive-qualified part.
