NT5AD512M16A4-GZ - 8Gb DDR4 SDRAM 512Mx16 | Nanya
N.º da peça: NT5AD512M16A4-GZ ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $12.7 | $12,70 |
| 10 | $11.5 | $115,00 |
| 100 | $10.2 | $1.020,00 |
| 500 | $9.1 | $4.550,00 |
| 1.000 | $8.5 | $8.500,00 |
NT5AD512M16A4-GZ Visão geral
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and embedded systems, offering higher bandwidth and lower power consumption than its predecessors. DDR4 operates at lower voltages (1.2V) and supports higher densities, enabling larger memory capacities in compact form factors.
Key features of the NT5AD512M16A4-GZ include a maximum clock frequency of 1200 MHz (DDR4-2400), a 16-bit data bus, and support for interleaved burst lengths of 4 and 8. It incorporates advanced functions such as auto self-refresh, a built-in temperature sensor, auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check), data mask, write leveling, and ZQ calibration. These features enhance signal integrity, reliability, and ease of use in high-speed systems.
The device is designed for commercial and industrial temperature ranges, ensuring reliable operation in demanding environments. It is RoHS compliant and lead-free, meeting environmental standards. The 96-ball TFBGA package provides a compact footprint with excellent thermal and electrical performance, suitable for space-constrained PCB designs.
Typical applications include enterprise servers, data centers, networking equipment, industrial automation, and advanced driver assistance systems (ADAS). The high density and bandwidth make it ideal for memory-intensive tasks such as real-time data processing, AI inference, and high-performance computing.
When designing with this DDR4 SDRAM, ensure proper termination and signal integrity practices are followed, including matched trace lengths and appropriate on-die termination (ODT) settings. The ZQ calibration pin must be connected to a 240-ohm resistor to ground for proper impedance calibration. Additionally, the VTT and VREF supplies should be decoupled with capacitors to minimize noise.
Alternativas drop-in para NT5AD512M16A4-GZ — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com NT5AD512M16A4-GZ (mesmo formato e footprint) — diferindo em Package, Data Rate, Operating Temperature Range, Supply Voltage, Density.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
NT5AD512M16C4-JRI
✅ Drop-In✓ Em estoque
$75.58 / unidade
Ver ficha técnica →NT5AD512M16A4-HR
✅ Drop-In✓ Em estoque
$8.1 / unidade
Ver ficha técnica →NT5AD512M16
✅ Drop-In✓ Em estoque
$73.75 / unidade
Ver ficha técnica →MT40A512M16JY-075E
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$30.5 / unidade
Ver ficha técnica →K4A8G165WB-BCWE
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.55 / unidade
Ver ficha técnica →H5AN8G6NDJR
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$35 / unidade
Ver ficha técnica →NT5AD512M16A4-GZ Classificações máximas e características elétricas
| Tipo de memória | DDR4 SDRAM |
| Organização da memória | 512M x 16 |
| Density | 8Gb |
| Tensão de alimentação | 1.2V |
| Frequência máxima de clock | 1200 MHz |
| Largura do barramento de dados | 16 bits |
| Encapsulamento | TFBGA-96 |
| Number of Terminals | 96 |
| Interleaved Burst Length | 4, 8 |
| Access Mode | Four Bank Page Burst |
| Faixa de temperatura de operação | Commercial and Industrial |
| RoHS | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| CRC Function | Yes |
| Data Mask Function | Yes |
| Write Leveling Function | Yes |
| ZQ Calibration Function | Yes |
Configuração de pinos do NT5AD512M16A4-GZ
| Pino A1 | VDD — Power supply |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ2 — Data input/output 2 |
| Pino B3 | DQ3 — Data input/output 3 |
| Pino C1 | VDDQ — Power supply for output buffers |
| Pino C2 | DQ4 — Data input/output 4 |
| Pino C3 | DQ5 — Data input/output 5 |
| Pino D1 | VSSQ — Ground for output buffers |
| Pino D2 | DQ6 — Data input/output 6 |
| Pino D3 | DQ7 — Data input/output 7 |
| Pino E1 | VDD — Power supply |
| Pino E2 | DQS0 — Data strobe 0 |
| Pino E3 | DQS0# — Data strobe 0 complement |
| Pino F1 | VSS — Ground |
| Pino F2 | DM0 — Data mask 0 |
| Pino F3 | VDDQ — Power supply for output buffers |
| Pino G1 | VSSQ — Ground for output buffers |
| Pino G2 | CK — Clock input |
| Pino G3 | CK# — Clock input complement |
| Pino H1 | VDD — Power supply |
| Pino H2 | CKE — Clock enable |
| Pino H3 | CS# — Chip select |
| Pino J1 | VSS — Ground |
| Pino J2 | RAS# — Row address strobe |
| Pino J3 | CAS# — Column address strobe |
| Pino K1 | VDDQ — Power supply for output buffers |
| Pino K2 | WE# — Write enable |
| Pino K3 | A0 — Address input 0 |
| Pino L1 | VSSQ — Ground for output buffers |
| Pino L2 | A1 — Address input 1 |
| Pino L3 | A2 — Address input 2 |
| Pino M1 | VDD — Power supply |
| Pino M2 | A3 — Address input 3 |
| Pino M3 | A4 — Address input 4 |
| Pino N1 | VSS — Ground |
| Pino N2 | A5 — Address input 5 |
| Pino N3 | A6 — Address input 6 |
| Pino P1 | VDDQ — Power supply for output buffers |
| Pino P2 | A7 — Address input 7 |
| Pino P3 | A8 — Address input 8 |
| Pino R1 | VSSQ — Ground for output buffers |
| Pino R2 | A9 — Address input 9 |
| Pino R3 | A10/AP — Address input 10 / Auto precharge |
| Pino T1 | VDD — Power supply |
| Pino T2 | A11 — Address input 11 |
| Pino T3 | A12/BC# — Address input 12 / Burst chop |
| Pino U1 | VSS — Ground |
| Pino U2 | A13 — Address input 13 |
| Pino U3 | A14 — Address input 14 |
| Pino V1 | VDDQ — Power supply for output buffers |
| Pino V2 | A15 — Address input 15 |
| Pino V3 | BA0 — Bank address 0 |
| Pino W1 | VSSQ — Ground for output buffers |
| Pino W2 | BA1 — Bank address 1 |
| Pino W3 | BA2 — Bank address 2 |
| Pino Y1 | VDD — Power supply |
| Pino Y2 | BG0 — Bank group 0 |
| Pino Y3 | BG1 — Bank group 1 |
| Pino AA1 | VSS — Ground |
| Pino AA2 | ACT# — Activate command |
| Pino AA3 | PAR — Parity input |
| Pino AB1 | VDDQ — Power supply for output buffers |
| Pino AB2 | ALERT# — Alert output |
| Pino AB3 | RESET# — Reset input |
| Pino AC1 | VSSQ — Ground for output buffers |
| Pino AC2 | TEN — Temperature sensor enable |
| Pino AC3 | ZQ — Calibration reference |
| Pino AD1 | VDD — Power supply |
| Pino AD2 | VREFCA — Reference voltage for command/address |
| Pino AD3 | VTT — Termination voltage |
Aplicações típicas
NT5AD512M16A4-GZ é adequado para 6 aplicaçãos: Enterprise Servers, Data Center & Enterprise Computing, Networking Equipment, Industrial Automation, Automotive ADAS, Consumer Electronics.
Enterprise Servers
The NT5AD512M16A4-GZ provides high-density, high-bandwidth memory for enterprise servers, supporting virtualization, database management, and cloud computing. Its 8Gb density and DDR4-2400 speed enable fast data access and large memory pools, improving overall system performance. The 1.2V operation reduces power consumption, lowering total cost of ownership in data centers.
Recomendado
Data Center & Enterprise Computing
In data centers, the NT5AD512M16A4-GZ supports high-performance computing, AI inference, and big data analytics. Its high bandwidth and low latency are critical for processing large datasets. The device's industrial temperature range ensures reliable operation in demanding environments. The built-in temperature sensor and auto self-refresh enhance data integrity and power efficiency.
Recomendado
Networking Equipment
The NT5AD512M16A4-GZ is ideal for networking equipment such as routers, switches, and firewalls, where high-speed packet processing and large routing tables require substantial memory. Its 8Gb density and DDR4-2400 speed provide the necessary bandwidth for line-rate forwarding. The compact TFBGA package saves PCB space, and the low 1.2V supply reduces heat generation in dense chassis.
Recomendado
Industrial Automation
In industrial automation, the NT5AD512M16A4-GZ provides reliable memory for PLCs, robotics, and machine vision systems. Its industrial temperature range ensures operation in harsh environments. The device's CRC and data mask functions improve data integrity in noisy industrial settings. The 1.2V operation reduces power consumption, which is beneficial for energy-efficient factory floors.
Recomendado
Automotive ADAS
The NT5AD512M16A4-GZ is used in automotive advanced driver assistance systems (ADAS) for real-time sensor fusion and decision making. Its high bandwidth supports processing of camera, radar, and LiDAR data. The device's industrial temperature range is suitable for automotive environments. The built-in temperature sensor and auto self-refresh enhance reliability in varying thermal conditions.
Recomendado
Consumer Electronics
The NT5AD512M16A4-GZ can be used in high-end consumer electronics such as gaming consoles, set-top boxes, and smart TVs, where high memory bandwidth is needed for graphics and multimedia. Its 8Gb density allows for smooth multitasking and fast app loading. The low 1.2V supply helps extend battery life in portable devices, and the compact TFBGA package fits slim designs.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para NT5AD512M16A4-GZ — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | NT5AD512M16C4-JRI | MT40A512M16JY-075E | K4A8G165WB-BCWE |
|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principais diferenciais
- Industrial temperature range support (vs MT40A512M16JY-075E)
- Same-brand availability (vs K4A8G165WB-BCWE)
- Built-in temperature sensor (vs H5AN8G6NDJR)
Notas de projeto
For DDR4 routing, maintain matched trace lengths for DQ, DQS, and address/command signals to ensure signal integrity. Use controlled impedance traces (typically 40-50 ohms single-ended, 80-100 ohms differential) and provide proper termination for VTT. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin to minimize power supply noise.
The NT5AD512M16A4-GZ operates over commercial and industrial temperature ranges. Ensure adequate airflow or heatsinking in high-ambient-temperature environments. The TFBGA package has a low thermal resistance, but power dissipation should be considered. Monitor the built-in temperature sensor to implement thermal throttling if necessary.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for proper impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Also, ensure VREFCA and VTT are properly decoupled to avoid reference voltage noise, which can cause data errors.
Informações de conformidade
RoHS compliant and lead-free as per distributor listings. AEC-Q100 not applicable as this is a memory IC, not an automotive-qualified part.
