IKD15N60RFATMA1 vs IGB30N60H3ATMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IKD15N60RFATMA1 بواسطة Infineon و IGB30N60H3ATMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IKD15N60RFATMA1 | IGB30N60H3ATMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | IGBTs | IGBTs |
| حالة دورة الحياة | نشط | نشط |
| Technology | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) | Trench Field Stop |
| Collector-Emitter Voltage (VCES) | 600 V | — |
| Continuous Collector Current (IC at TC=25C) | 30 A | — |
| Continuous Collector Current (IC at TC=100C) | 15 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | — |
| Gate-Emitter Voltage (VGES) | +/-20 V | — |
| Gate-Emitter Threshold (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| VCE(sat) at IC=15A, VGE=15V | 1.5 V (typical) | — |
| Maximum Power Dissipation (Ptot) | 250 W | — |
| درجة حرارة الوصلة التشغيلية | -40C to +175C | -40C to +175C |
| Integrated Anti-Parallel Diode | Yes (RC-Drives Fast, co-packaged) | — |
| العلبة | PG-TO252-3 (DPAK), 3 pins (2 + tab) | PG-TO263-3-2 (D2PAK) |
| نوع التركيب | Surface Mount | Surface Mount |
| Switching Speed Class | Hard-switching, RC-Drives Fast | — |
| Target Application | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) | — |
| RoHS Compliance | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | TRENCHSTOP IGBT3 |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous DC Collector Current (IC, TC=25C) | — | 60 A |
| Pulsed Collector Current (ICpuls) | — | [DATA_NEEDED: pulsed collector current value] |
| تبديد القدرة (Ptot) | — | 187 W |
| Gate-Emitter Voltage (VGE) | — | +/- 20 V |
| جهد التشبع للمجمّع-الباعث (Vce(sat)) | — | 1.95 V (typ, at IC=30 A, VGE=15 V) |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th) typical value] |
| Turn-Off Time (toff) | — | 262 ns (nominal) |
| Configuration | — | Single IGBT |
| Storage Temperature | — | -55C to +150C |
| Terminal Form | — | Gull Wing |
| عدد الأطراف | — | 3 (2 + Tab) |
| حالة RoHS | — | Compliant |
| Switching Behavior | — | MOSFET-like turn-off |