IKD15N60RFATMA1 vs IGB30N60H3ATMA1 Perbandingan

Perbandingan bersamaan detil IKD15N60RFATMA1 dari Infineon dan IGB30N60H3ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IKD15N60RFATMA1 IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 ✓ Aktif
Infineon
IGB30N60H3ATMA1 IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon

IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon

IGB30N60H3ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IKD15N60RFATMA1 IGB30N60H3ATMA1
Merek Infineon Infineon
Kategori IGBTs IGBTs
Status Lingkungan Hidup Aktif Aktif
Technology TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) Trench Field Stop
Collector-Emitter Voltage (VCES) 600 V —
Continuous Collector Current (IC at TC=25C) 30 A —
Continuous Collector Current (IC at TC=100C) 15 A —
Pulsed Collector Current (ICM) [DATA_NEEDED: ICM value] —
Gate-Emitter Voltage (VGES) +/-20 V —
Gate-Emitter Threshold (VGE(th)) [DATA_NEEDED: VGE(th) typical value] —
VCE(sat) at IC=15A, VGE=15V 1.5 V (typical) —
Maximum Power Dissipation (Ptot) 250 W —
Suhu Hubung Kerja -40C to +175C -40C to +175C
Integrated Anti-Parallel Diode Yes (RC-Drives Fast, co-packaged) —
Paket PG-TO252-3 (DPAK), 3 pins (2 + tab) PG-TO263-3-2 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Switching Speed Class Hard-switching, RC-Drives Fast —
Target Application Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) —
RoHS Compliance Compliant —
Manufacturer — Infineon Technologies
Product Family — TRENCHSTOP IGBT3
Collector-Emitter Voltage (VCE) — 600 V
Continuous DC Collector Current (IC, TC=25C) — 60 A
Pulsed Collector Current (ICpuls) — [DATA_NEEDED: pulsed collector current value]
Dissipasi Listrik (Ptot) — 187 W
Gate-Emitter Voltage (VGE) — +/- 20 V
Tegangan Saturasi Pemisah-Penjana (Vce(sat)) — 1.95 V (typ, at IC=30 A, VGE=15 V)
Gate-Emitter Threshold Voltage (VGE(th)) — [DATA_NEEDED: VGE(th) typical value]
Turn-Off Time (toff) — 262 ns (nominal)
Configuration — Single IGBT
Storage Temperature — -55C to +150C
Terminal Form — Gull Wing
Jumlah Pin — 3 (2 + Tab)
Status RoHS — Compliant
Switching Behavior — MOSFET-like turn-off

Spek dan Sumber

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