IKD15N60RFATMA1 vs IGB30N60H3ATMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma IKD15N60RFATMA1 tarafından Infineon ve IGB30N60H3ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Infineon
IKD15N60RFATMA1 IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 ✓ Aktif
Infineon
IGB30N60H3ATMA1 IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon

IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon

IGB30N60H3ATMA1 ✓ Aktif

Özellik Karşılaştırması

Parametre IKD15N60RFATMA1 IGB30N60H3ATMA1
Marka Infineon Infineon
Kategori IGBTs IGBTs
Yaşam Döngüsü Durumu Aktif Aktif
Technology TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) Trench Field Stop
Collector-Emitter Voltage (VCES) 600 V —
Continuous Collector Current (IC at TC=25C) 30 A —
Continuous Collector Current (IC at TC=100C) 15 A —
Pulsed Collector Current (ICM) [DATA_NEEDED: ICM value] —
Gate-Emitter Voltage (VGES) +/-20 V —
Gate-Emitter Threshold (VGE(th)) [DATA_NEEDED: VGE(th) typical value] —
VCE(sat) at IC=15A, VGE=15V 1.5 V (typical) —
Maximum Power Dissipation (Ptot) 250 W —
İşletim Jant Sıcaklığı -40C to +175C -40C to +175C
Integrated Anti-Parallel Diode Yes (RC-Drives Fast, co-packaged) —
Paket PG-TO252-3 (DPAK), 3 pins (2 + tab) PG-TO263-3-2 (D2PAK)
Montaj Türü Surface Mount Surface Mount
Switching Speed Class Hard-switching, RC-Drives Fast —
Target Application Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) —
RoHS Compliance Compliant —
Manufacturer — Infineon Technologies
Product Family — TRENCHSTOP IGBT3
Collector-Emitter Voltage (VCE) — 600 V
Continuous DC Collector Current (IC, TC=25C) — 60 A
Pulsed Collector Current (ICpuls) — [DATA_NEEDED: pulsed collector current value]
Güç Tüketimi (Ptot) — 187 W
Gate-Emitter Voltage (VGE) — +/- 20 V
Toplayıcı-Emisör Doldurma电压 (Vce(sat)) — 1.95 V (typ, at IC=30 A, VGE=15 V)
Gate-Emitter Threshold Voltage (VGE(th)) — [DATA_NEEDED: VGE(th) typical value]
Turn-Off Time (toff) — 262 ns (nominal)
Configuration — Single IGBT
Storage Temperature — -55C to +150C
Terminal Form — Gull Wing
Pin Sayısı — 3 (2 + Tab)
RoHS Durumu — Compliant
Switching Behavior — MOSFET-like turn-off

Dökümanlar & Kaynaklar

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