IKD15N60RFATMA1 vs IGB30N60H3ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IKD15N60RFATMA1 sa pamamagitan ng Infineon at IGB30N60H3ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IKD15N60RFATMA1 | IGB30N60H3ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | IGBTs | IGBTs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) | Trench Field Stop |
| Collector-Emitter Voltage (VCES) | 600 V | — |
| Continuous Collector Current (IC at TC=25C) | 30 A | — |
| Continuous Collector Current (IC at TC=100C) | 15 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | — |
| Gate-Emitter Voltage (VGES) | +/-20 V | — |
| Gate-Emitter Threshold (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| VCE(sat) at IC=15A, VGE=15V | 1.5 V (typical) | — |
| Maximum Power Dissipation (Ptot) | 250 W | — |
| Temperature ng Junction na Operasyon | -40C to +175C | -40C to +175C |
| Integrated Anti-Parallel Diode | Yes (RC-Drives Fast, co-packaged) | — |
| Packhaging | PG-TO252-3 (DPAK), 3 pins (2 + tab) | PG-TO263-3-2 (D2PAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Switching Speed Class | Hard-switching, RC-Drives Fast | — |
| Target Application | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) | — |
| RoHS Compliance | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | TRENCHSTOP IGBT3 |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous DC Collector Current (IC, TC=25C) | — | 60 A |
| Pulsed Collector Current (ICpuls) | — | [DATA_NEEDED: pulsed collector current value] |
| Pwersang Pinahihigpit (Ptot) | — | 187 W |
| Gate-Emitter Voltage (VGE) | — | +/- 20 V |
| Voltage ng Collector-Emitter na Naging饱和 (Vce(sat)) | — | 1.95 V (typ, at IC=30 A, VGE=15 V) |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th) typical value] |
| Turn-Off Time (toff) | — | 262 ns (nominal) |
| Configuration | — | Single IGBT |
| Storage Temperature | — | -55C to +150C |
| Terminal Form | — | Gull Wing |
| Bilang ng Pin | — | 3 (2 + Tab) |
| Tindminan RoHS | — | Compliant |
| Switching Behavior | — | MOSFET-like turn-off |