AS4C256M16D3L-12BCN - 4Gbit DDR3L SDRAM 800MHz | Alliance Memory
MPN: AS4C256M16D3L-12BCN ✓ نشطAS4C256M16D3L-12BCN نظرة عامة
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at a reduced supply voltage of 1.35V, compared to standard DDR3's 1.5V. This lower voltage reduces power consumption by up to 20% while maintaining similar performance, making it ideal for power-sensitive applications such as laptops, embedded systems, and networking equipment. DDR3L is part of the DDR SDRAM family, which includes DDR, DDR2, DDR3, and DDR4, each offering increased speed and lower power.
Key features include a parallel interface with a 16-bit data bus, 800MHz clock speed, and a CAS latency of 20ns. The device supports JEDEC clock jitter specifications, ensuring reliable operation in high-speed systems. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for space-constrained designs.
The AS4C256M16D3L-12BCN utilizes advanced CMOS technology to achieve high density and low power consumption. It supports various burst lengths and programmable CAS latency, allowing flexibility in system design. The device also includes on-die termination (ODT) and dynamic ODT for improved signal integrity, reducing the need for external termination resistors.
Typical applications include networking equipment (routers, switches), industrial automation, embedded computing, and consumer electronics such as set-top boxes and smart TVs. Its low voltage and high bandwidth make it suitable for DDR3L-based systems requiring 4Gbit density.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ, which should be regulated accurately.
بدائل مباشرة لـ AS4C256M16D3L-12BCN — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع AS4C256M16D3L-12BCN (نفس عامل الشكل والبصمة) — يختلف في Package, Supply Voltage, CAS Latency, Data Rate, Operating Temperature.
AS4C256M16D3LB-12BCN
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
AS4C256M16D3A-12BCN
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
AS4C256M16D3-12BCN
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
MT41K256M16HA-125
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←IS43TR16512B-125KBLI
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها📋 بديل مرجعي (غير موجود في الكتالوج)
K4B4G1646E-BYMA
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←AS4C256M16D3L-12BCN الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| حجم الذاكرة | 4 Gbit |
| التنظيم | 256M x 16 |
| عرض ناقل البيانات | 16 bit |
| أقصى تردد للساعة | 800 MHz |
| معدل البيانات | 1600 Mbps |
| زمن الوصول CAS | 20 ns |
| جهد التغذية | 1.35 V |
| العلبة | 96-FBGA (9x13 mm) |
| نمط التركيب | SMD/SMT |
| نطاق درجة حرارة التشغيل | 0C to +95C (Tc) |
| RoHS | Compliant |
| خالٍ من الهالوجين | Yes |
| نوع الواجهة | Parallel |
| عدد الدبابيس | 96 |
تكوين أطراف AS4C256M16D3L-12BCN
| دبوس A1 | VDD — Power supply (1.35V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data input/output 2 |
| دبوس A6 | DQ3 — Data input/output 3 |
| دبوس A7 | VDDQ — I/O power supply |
| دبوس A8 | DQ4 — Data input/output 4 |
| دبوس A9 | DQ5 — Data input/output 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data input/output 6 |
| دبوس A12 | DQ7 — Data input/output 7 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ8 — Data input/output 8 |
| دبوس B3 | DQ9 — Data input/output 9 |
| دبوس B4 | VDD — Power supply |
| دبوس B5 | DQ10 — Data input/output 10 |
| دبوس B6 | DQ11 — Data input/output 11 |
| دبوس B7 | VSS — Ground |
| دبوس B8 | DQ12 — Data input/output 12 |
| دبوس B9 | DQ13 — Data input/output 13 |
| دبوس B10 | VDDQ — I/O power supply |
| دبوس B11 | DQ14 — Data input/output 14 |
| دبوس B12 | DQ15 — Data input/output 15 |
| دبوس C1 | VDDQ — I/O power supply |
| دبوس C2 | VSS — Ground |
| دبوس C3 | VDD — Power supply |
| دبوس C4 | VSS — Ground |
| دبوس C5 | VDDQ — I/O power supply |
| دبوس C6 | VSS — Ground |
| دبوس C7 | VDD — Power supply |
| دبوس C8 | VSS — Ground |
| دبوس C9 | VDDQ — I/O power supply |
| دبوس C10 | VSS — Ground |
| دبوس C11 | VDD — Power supply |
| دبوس C12 | VSS — Ground |
| دبوس D1 | A0 — Address input 0 |
| دبوس D2 | A1 — Address input 1 |
| دبوس D3 | A2 — Address input 2 |
| دبوس D4 | A3 — Address input 3 |
| دبوس D5 | A4 — Address input 4 |
| دبوس D6 | A5 — Address input 5 |
| دبوس D7 | A6 — Address input 6 |
| دبوس D8 | A7 — Address input 7 |
| دبوس D9 | A8 — Address input 8 |
| دبوس D10 | A9 — Address input 9 |
| دبوس D11 | A10/AP — Address input 10 / Auto-precharge |
| دبوس D12 | A11 — Address input 11 |
| دبوس E1 | A12 — Address input 12 |
| دبوس E2 | A13 — Address input 13 |
| دبوس E3 | A14 — Address input 14 |
| دبوس E4 | BA0 — Bank address 0 |
| دبوس E5 | BA1 — Bank address 1 |
| دبوس E6 | BA2 — Bank address 2 |
| دبوس E7 | RAS# — Row address strobe |
| دبوس E8 | CAS# — Column address strobe |
| دبوس E9 | WE# — Write enable |
| دبوس E10 | CS# — Chip select |
| دبوس E11 | CKE — Clock enable |
| دبوس E12 | ODT — On-die termination |
| دبوس F1 | CK — Clock (positive) |
| دبوس F2 | CK# — Clock (negative) |
| دبوس F3 | VDD — Power supply |
| دبوس F4 | VSS — Ground |
| دبوس F5 | VDDQ — I/O power supply |
| دبوس F6 | VSS — Ground |
| دبوس F7 | VDD — Power supply |
| دبوس F8 | VSS — Ground |
| دبوس F9 | VDDQ — I/O power supply |
| دبوس F10 | VSS — Ground |
| دبوس F11 | VDD — Power supply |
| دبوس F12 | VSS — Ground |
| دبوس G1 | DM0 — Data mask 0 |
| دبوس G2 | DM1 — Data mask 1 |
| دبوس G3 | VSS — Ground |
| دبوس G4 | VDD — Power supply |
| دبوس G5 | VSS — Ground |
| دبوس G6 | VDDQ — I/O power supply |
| دبوس G7 | VSS — Ground |
| دبوس G8 | VDD — Power supply |
| دبوس G9 | VSS — Ground |
| دبوس G10 | VDDQ — I/O power supply |
| دبوس G11 | VSS — Ground |
| دبوس G12 | VDD — Power supply |
| دبوس H1 | DQS0 — Data strobe 0 |
| دبوس H2 | DQS0# — Data strobe 0 (negative) |
| دبوس H3 | DQS1 — Data strobe 1 |
| دبوس H4 | DQS1# — Data strobe 1 (negative) |
| دبوس H5 | VDDQ — I/O power supply |
| دبوس H6 | VSS — Ground |
| دبوس H7 | VDD — Power supply |
| دبوس H8 | VSS — Ground |
| دبوس H9 | VDDQ — I/O power supply |
| دبوس H10 | VSS — Ground |
| دبوس H11 | VDD — Power supply |
| دبوس H12 | VSS — Ground |
| دبوس J1 | RESET# — Reset (active low) |
| دبوس J2 | VDD — Power supply |
| دبوس J3 | VSS — Ground |
| دبوس J4 | VDDQ — I/O power supply |
| دبوس J5 | VSS — Ground |
| دبوس J6 | VDD — Power supply |
| دبوس J7 | VSS — Ground |
| دبوس J8 | VDDQ — I/O power supply |
| دبوس J9 | VSS — Ground |
| دبوس J10 | VDD — Power supply |
| دبوس J11 | VSS — Ground |
| دبوس J12 | VDDQ — I/O power supply |
| دبوس K1 | VSS — Ground |
| دبوس K2 | VDDQ — I/O power supply |
| دبوس K3 | VSS — Ground |
| دبوس K4 | VDD — Power supply |
| دبوس K5 | VSS — Ground |
| دبوس K6 | VDDQ — I/O power supply |
| دبوس K7 | VSS — Ground |
| دبوس K8 | VDD — Power supply |
| دبوس K9 | VSS — Ground |
| دبوس K10 | VDDQ — I/O power supply |
| دبوس K11 | VSS — Ground |
| دبوس K12 | VDD — Power supply |
| دبوس L1 | VDDQ — I/O power supply |
| دبوس L2 | VSS — Ground |
| دبوس L3 | VDD — Power supply |
| دبوس L4 | VSS — Ground |
| دبوس L5 | VDDQ — I/O power supply |
| دبوس L6 | VSS — Ground |
| دبوس L7 | VDD — Power supply |
| دبوس L8 | VSS — Ground |
| دبوس L9 | VDDQ — I/O power supply |
| دبوس L10 | VSS — Ground |
| دبوس L11 | VDD — Power supply |
| دبوس L12 | VSS — Ground |
| دبوس M1 | VSS — Ground |
| دبوس M2 | VDD — Power supply |
| دبوس M3 | VSS — Ground |
| دبوس M4 | VDDQ — I/O power supply |
| دبوس M5 | VSS — Ground |
| دبوس M6 | VDD — Power supply |
| دبوس M7 | VSS — Ground |
| دبوس M8 | VDDQ — I/O power supply |
| دبوس M9 | VSS — Ground |
| دبوس M10 | VDD — Power supply |
| دبوس M11 | VSS — Ground |
| دبوس M12 | VDDQ — I/O power supply |
| دبوس N1 | VDD — Power supply |
| دبوس N2 | VSS — Ground |
| دبوس N3 | VDDQ — I/O power supply |
| دبوس N4 | VSS — Ground |
| دبوس N5 | VDD — Power supply |
| دبوس N6 | VSS — Ground |
| دبوس N7 | VDDQ — I/O power supply |
| دبوس N8 | VSS — Ground |
| دبوس N9 | VDD — Power supply |
| دبوس N10 | VSS — Ground |
| دبوس N11 | VDDQ — I/O power supply |
| دبوس N12 | VSS — Ground |
التطبيقات النموذجية
AS4C256M16D3L-12BCN مناسب لـ 6 التطبيقs: Networking Equipment, Industrial Automation, Embedded Computing, Consumer Electronics, Data Storage Systems, Test and Measurement.
Networking Equipment
The AS4C256M16D3L-12BCN provides high-bandwidth, low-power memory for routers and switches. Its 800MHz clock and 16-bit bus enable fast packet processing, while 1.35V operation reduces power in always-on network devices. The 4Gbit density supports large routing tables and buffering. In a router, it is used as main memory for the CPU and NPU, with the parallel interface connecting directly to the memory controller. Performance is critical for line-rate forwarding, and the DDR3L interface ensures low latency. Power dissipation is minimized due to the low voltage, which is essential for fanless designs.
موصى به
Industrial Automation
In industrial controllers and PLCs, the AS4C256M16D3L-12BCN offers reliable, low-power memory for real-time data logging and control algorithms. Its 4Gbit capacity allows storing large process variables, and the 1.35V supply is compatible with energy-efficient industrial power rails. The 96-FBGA package withstands harsh environments with proper thermal management. The memory is used in conjunction with an MCU or FPGA, providing fast access for deterministic control loops. The DDR3L interface supports high-speed data transfer, while the low voltage reduces heat generation in sealed enclosures. This makes it ideal for factory automation and robotics.
موصى به
Embedded Computing
The AS4C256M16D3L-12BCN is ideal for embedded computing modules, such as single-board computers and edge gateways. Its 4Gbit density provides ample memory for operating systems and applications, while the 1.35V operation reduces power consumption in battery-powered or thermally constrained systems. The 800MHz clock enables responsive multitasking. In an embedded system, the memory is typically connected to a processor's memory controller, with the parallel interface simplifying PCB layout. The low voltage and high bandwidth make it suitable for IoT gateways and industrial PCs, where reliability and efficiency are paramount.
موصى به
Consumer Electronics
For set-top boxes, smart TVs, and gaming consoles, the AS4C256M16D3L-12BCN provides high-speed memory for multimedia processing. Its 4Gbit capacity supports HD video streaming and multitasking, while the 1.35V supply helps meet energy efficiency standards. The 96-FBGA package is compact, fitting into slim device designs. The memory is used for buffering video frames and storing application data, with the parallel interface ensuring high throughput. The low power consumption is beneficial for always-on devices, and the RoHS compliance meets environmental regulations.
موصى به
Data Storage Systems
In NAS and SSD controllers, the AS4C256M16D3L-12BCN serves as cache memory, providing fast access to frequently used data. Its 4Gbit capacity and 800MHz speed enable high throughput, while the 1.35V operation reduces power in storage devices that run 24/7. The parallel interface connects directly to the controller, and the low voltage helps meet energy efficiency requirements. The memory's reliability is crucial for data integrity, and the FBGA package offers good thermal performance in dense storage arrays.
موصى به
Test and Measurement
The AS4C256M16D3L-12BCN is used in oscilloscopes and signal analyzers for high-speed data acquisition and waveform storage. Its 4Gbit capacity allows capturing long records, and the 800MHz clock supports fast sampling rates. The 1.35V supply reduces power in portable instruments. The memory is interfaced with FPGAs or DSPs, providing high bandwidth for real-time processing. The low voltage and compact package make it suitable for benchtop and handheld devices, where space and power are limited.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ AS4C256M16D3L-12BCN — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | AS4C256M16D3LB-12BCN | AS4C256M16D3A-12BCN | AS4C256M16D3-12BCN | MT41K256M16HA-125 | IS43TR16512B-125KBLI | K4B4G1646E-BYMA |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory | Alliance Memory | Micron Technology | ISSI | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.5 V | 1.35 V | 1.35 V | 1.35 V |
| Max Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz |
| CAS Latency | 20 ns | 20 ns | 20 ns | 20 ns | 13.75 ns | 13.75 ns | 13.75 ns |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
أبرز الفروقات
- Low voltage operation (1.35V) reduces power consumption by up to 20% compared to standard DDR3 (مقابلAS4C256M16D3-12BCN)
- Pin-compatible with multiple cross-brand DDR3L 4Gbit parts (مقابلMT41K256M16HA-125)
- RoHS compliant and halogen-free (مقابلK4B4G1646E-BYMA)
ملاحظات التصميم
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/command signals. Keep trace lengths matched within +/- 0.5mm for each byte lane. Use ground planes beneath the memory area to reduce noise. Refer to the Alliance Memory layout guidelines in the datasheet for specific recommendations.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to each power pin. Use a bulk capacitor of 10uF near the memory. Ensure the 1.35V supply has low ripple (<50mV) and adequate current capability. The VDDQ supply should be separate or well-filtered to avoid noise coupling.
The AS4C256M16D3L-12BCN has a maximum operating temperature of 95C (Tc). For high-density systems, ensure adequate airflow or a heatsink to keep the case temperature below this limit. The FBGA package has a thermal resistance of approximately 20C/W, so power dissipation of 2W would raise the case temperature by 40C above ambient.
معلومات الامتثال
RoHS compliant and halogen-free per datasheet. Not AEC-Q100 qualified.
