AS4C256M16D3L-12BCN - 4Gbit DDR3L SDRAM 800MHz | Alliance Memory
MPN: AS4C256M16D3L-12BCN ✓ Hoạt độngAS4C256M16D3L-12BCN Tóm tắt
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at a reduced supply voltage of 1.35V, compared to standard DDR3's 1.5V. This lower voltage reduces power consumption by up to 20% while maintaining similar performance, making it ideal for power-sensitive applications such as laptops, embedded systems, and networking equipment. DDR3L is part of the DDR SDRAM family, which includes DDR, DDR2, DDR3, and DDR4, each offering increased speed and lower power.
Key features include a parallel interface with a 16-bit data bus, 800MHz clock speed, and a CAS latency of 20ns. The device supports JEDEC clock jitter specifications, ensuring reliable operation in high-speed systems. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for space-constrained designs.
The AS4C256M16D3L-12BCN utilizes advanced CMOS technology to achieve high density and low power consumption. It supports various burst lengths and programmable CAS latency, allowing flexibility in system design. The device also includes on-die termination (ODT) and dynamic ODT for improved signal integrity, reducing the need for external termination resistors.
Typical applications include networking equipment (routers, switches), industrial automation, embedded computing, and consumer electronics such as set-top boxes and smart TVs. Its low voltage and high bandwidth make it suitable for DDR3L-based systems requiring 4Gbit density.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ, which should be regulated accurately.
Bộ thay thế dễ dàng lắp đặt cho AS4C256M16D3L-12BCN — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với AS4C256M16D3L-12BCN (cùng hình factor và footprint) — khác nhau ở Package, Supply Voltage, CAS Latency, Data Rate, Operating Temperature.
AS4C256M16D3LB-12BCN
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
AS4C256M16D3A-12BCN
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
AS4C256M16D3-12BCN
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT41K256M16HA-125
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$6.3636 / Đơn vị
Xem tài liệu →IS43TR16512B-125KBLI
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
K4B4G1646E-BYMA
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$14.3182 / Đơn vị
Xem tài liệu →AS4C256M16D3L-12BCN Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR3L SDRAM |
| Kích thước bộ nhớ | 4 Gbit |
| Tổ chức | 256M x 16 |
| Bề rộng đường dữ liệu | 16 bit |
| Tần số xung maksimum | 800 MHz |
| Tốc độ dữ liệu | 1600 Mbps |
| Latency CAS | 20 ns |
| Điện áp cung cấp | 1.35 V |
| Hộp | 96-FBGA (9x13 mm) |
| Kiểu lắp đặt | SMD/SMT |
| Khoảng nhiệt độ hoạt động | 0C to +95C (Tc) |
| RoHS | Compliant |
| Đông trùng haogen | Yes |
| Loại giao diện | Parallel |
| Số lượng chân | 96 |
Cấu hình chân AS4C256M16D3L-12BCN
| Chân A1 | VDD — Power supply (1.35V) |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân A4 | VSS — Ground |
| Chân A5 | DQ2 — Data input/output 2 |
| Chân A6 | DQ3 — Data input/output 3 |
| Chân A7 | VDDQ — I/O power supply |
| Chân A8 | DQ4 — Data input/output 4 |
| Chân A9 | DQ5 — Data input/output 5 |
| Chân A10 | VSS — Ground |
| Chân A11 | DQ6 — Data input/output 6 |
| Chân A12 | DQ7 — Data input/output 7 |
| Chân B1 | VSS — Ground |
| Chân B2 | DQ8 — Data input/output 8 |
| Chân B3 | DQ9 — Data input/output 9 |
| Chân B4 | VDD — Power supply |
| Chân B5 | DQ10 — Data input/output 10 |
| Chân B6 | DQ11 — Data input/output 11 |
| Chân B7 | VSS — Ground |
| Chân B8 | DQ12 — Data input/output 12 |
| Chân B9 | DQ13 — Data input/output 13 |
| Chân B10 | VDDQ — I/O power supply |
| Chân B11 | DQ14 — Data input/output 14 |
| Chân B12 | DQ15 — Data input/output 15 |
| Chân C1 | VDDQ — I/O power supply |
| Chân C2 | VSS — Ground |
| Chân C3 | VDD — Power supply |
| Chân C4 | VSS — Ground |
| Chân C5 | VDDQ — I/O power supply |
| Chân C6 | VSS — Ground |
| Chân C7 | VDD — Power supply |
| Chân C8 | VSS — Ground |
| Chân C9 | VDDQ — I/O power supply |
| Chân C10 | VSS — Ground |
| Chân C11 | VDD — Power supply |
| Chân C12 | VSS — Ground |
| Chân D1 | A0 — Address input 0 |
| Chân D2 | A1 — Address input 1 |
| Chân D3 | A2 — Address input 2 |
| Chân D4 | A3 — Address input 3 |
| Chân D5 | A4 — Address input 4 |
| Chân D6 | A5 — Address input 5 |
| Chân D7 | A6 — Address input 6 |
| Chân D8 | A7 — Address input 7 |
| Chân D9 | A8 — Address input 8 |
| Chân D10 | A9 — Address input 9 |
| Chân D11 | A10/AP — Address input 10 / Auto-precharge |
| Chân D12 | A11 — Address input 11 |
| Chân E1 | A12 — Address input 12 |
| Chân E2 | A13 — Address input 13 |
| Chân E3 | A14 — Address input 14 |
| Chân E4 | BA0 — Bank address 0 |
| Chân E5 | BA1 — Bank address 1 |
| Chân E6 | BA2 — Bank address 2 |
| Chân E7 | RAS# — Row address strobe |
| Chân E8 | CAS# — Column address strobe |
| Chân E9 | WE# — Write enable |
| Chân E10 | CS# — Chip select |
| Chân E11 | CKE — Clock enable |
| Chân E12 | ODT — On-die termination |
| Chân F1 | CK — Clock (positive) |
| Chân F2 | CK# — Clock (negative) |
| Chân F3 | VDD — Power supply |
| Chân F4 | VSS — Ground |
| Chân F5 | VDDQ — I/O power supply |
| Chân F6 | VSS — Ground |
| Chân F7 | VDD — Power supply |
| Chân F8 | VSS — Ground |
| Chân F9 | VDDQ — I/O power supply |
| Chân F10 | VSS — Ground |
| Chân F11 | VDD — Power supply |
| Chân F12 | VSS — Ground |
| Chân G1 | DM0 — Data mask 0 |
| Chân G2 | DM1 — Data mask 1 |
| Chân G3 | VSS — Ground |
| Chân G4 | VDD — Power supply |
| Chân G5 | VSS — Ground |
| Chân G6 | VDDQ — I/O power supply |
| Chân G7 | VSS — Ground |
| Chân G8 | VDD — Power supply |
| Chân G9 | VSS — Ground |
| Chân G10 | VDDQ — I/O power supply |
| Chân G11 | VSS — Ground |
| Chân G12 | VDD — Power supply |
| Chân H1 | DQS0 — Data strobe 0 |
| Chân H2 | DQS0# — Data strobe 0 (negative) |
| Chân H3 | DQS1 — Data strobe 1 |
| Chân H4 | DQS1# — Data strobe 1 (negative) |
| Chân H5 | VDDQ — I/O power supply |
| Chân H6 | VSS — Ground |
| Chân H7 | VDD — Power supply |
| Chân H8 | VSS — Ground |
| Chân H9 | VDDQ — I/O power supply |
| Chân H10 | VSS — Ground |
| Chân H11 | VDD — Power supply |
| Chân H12 | VSS — Ground |
| Chân J1 | RESET# — Reset (active low) |
| Chân J2 | VDD — Power supply |
| Chân J3 | VSS — Ground |
| Chân J4 | VDDQ — I/O power supply |
| Chân J5 | VSS — Ground |
| Chân J6 | VDD — Power supply |
| Chân J7 | VSS — Ground |
| Chân J8 | VDDQ — I/O power supply |
| Chân J9 | VSS — Ground |
| Chân J10 | VDD — Power supply |
| Chân J11 | VSS — Ground |
| Chân J12 | VDDQ — I/O power supply |
| Chân K1 | VSS — Ground |
| Chân K2 | VDDQ — I/O power supply |
| Chân K3 | VSS — Ground |
| Chân K4 | VDD — Power supply |
| Chân K5 | VSS — Ground |
| Chân K6 | VDDQ — I/O power supply |
| Chân K7 | VSS — Ground |
| Chân K8 | VDD — Power supply |
| Chân K9 | VSS — Ground |
| Chân K10 | VDDQ — I/O power supply |
| Chân K11 | VSS — Ground |
| Chân K12 | VDD — Power supply |
| Chân L1 | VDDQ — I/O power supply |
| Chân L2 | VSS — Ground |
| Chân L3 | VDD — Power supply |
| Chân L4 | VSS — Ground |
| Chân L5 | VDDQ — I/O power supply |
| Chân L6 | VSS — Ground |
| Chân L7 | VDD — Power supply |
| Chân L8 | VSS — Ground |
| Chân L9 | VDDQ — I/O power supply |
| Chân L10 | VSS — Ground |
| Chân L11 | VDD — Power supply |
| Chân L12 | VSS — Ground |
| Chân M1 | VSS — Ground |
| Chân M2 | VDD — Power supply |
| Chân M3 | VSS — Ground |
| Chân M4 | VDDQ — I/O power supply |
| Chân M5 | VSS — Ground |
| Chân M6 | VDD — Power supply |
| Chân M7 | VSS — Ground |
| Chân M8 | VDDQ — I/O power supply |
| Chân M9 | VSS — Ground |
| Chân M10 | VDD — Power supply |
| Chân M11 | VSS — Ground |
| Chân M12 | VDDQ — I/O power supply |
| Chân N1 | VDD — Power supply |
| Chân N2 | VSS — Ground |
| Chân N3 | VDDQ — I/O power supply |
| Chân N4 | VSS — Ground |
| Chân N5 | VDD — Power supply |
| Chân N6 | VSS — Ground |
| Chân N7 | VDDQ — I/O power supply |
| Chân N8 | VSS — Ground |
| Chân N9 | VDD — Power supply |
| Chân N10 | VSS — Ground |
| Chân N11 | VDDQ — I/O power supply |
| Chân N12 | VSS — Ground |
Ứng dụng tiêu biểu
AS4C256M16D3L-12BCN phù hợp cho 6 Áp dụngs: Networking Equipment, Industrial Automation, Embedded Computing, Consumer Electronics, Data Storage Systems, Test and Measurement.
Networking Equipment
The AS4C256M16D3L-12BCN provides high-bandwidth, low-power memory for routers and switches. Its 800MHz clock and 16-bit bus enable fast packet processing, while 1.35V operation reduces power in always-on network devices. The 4Gbit density supports large routing tables and buffering. In a router, it is used as main memory for the CPU and NPU, with the parallel interface connecting directly to the memory controller. Performance is critical for line-rate forwarding, and the DDR3L interface ensures low latency. Power dissipation is minimized due to the low voltage, which is essential for fanless designs.
Được đề xuất
Industrial Automation
In industrial controllers and PLCs, the AS4C256M16D3L-12BCN offers reliable, low-power memory for real-time data logging and control algorithms. Its 4Gbit capacity allows storing large process variables, and the 1.35V supply is compatible with energy-efficient industrial power rails. The 96-FBGA package withstands harsh environments with proper thermal management. The memory is used in conjunction with an MCU or FPGA, providing fast access for deterministic control loops. The DDR3L interface supports high-speed data transfer, while the low voltage reduces heat generation in sealed enclosures. This makes it ideal for factory automation and robotics.
Được đề xuất
Embedded Computing
The AS4C256M16D3L-12BCN is ideal for embedded computing modules, such as single-board computers and edge gateways. Its 4Gbit density provides ample memory for operating systems and applications, while the 1.35V operation reduces power consumption in battery-powered or thermally constrained systems. The 800MHz clock enables responsive multitasking. In an embedded system, the memory is typically connected to a processor's memory controller, with the parallel interface simplifying PCB layout. The low voltage and high bandwidth make it suitable for IoT gateways and industrial PCs, where reliability and efficiency are paramount.
Được đề xuất
Consumer Electronics
For set-top boxes, smart TVs, and gaming consoles, the AS4C256M16D3L-12BCN provides high-speed memory for multimedia processing. Its 4Gbit capacity supports HD video streaming and multitasking, while the 1.35V supply helps meet energy efficiency standards. The 96-FBGA package is compact, fitting into slim device designs. The memory is used for buffering video frames and storing application data, with the parallel interface ensuring high throughput. The low power consumption is beneficial for always-on devices, and the RoHS compliance meets environmental regulations.
Được đề xuất
Data Storage Systems
In NAS and SSD controllers, the AS4C256M16D3L-12BCN serves as cache memory, providing fast access to frequently used data. Its 4Gbit capacity and 800MHz speed enable high throughput, while the 1.35V operation reduces power in storage devices that run 24/7. The parallel interface connects directly to the controller, and the low voltage helps meet energy efficiency requirements. The memory's reliability is crucial for data integrity, and the FBGA package offers good thermal performance in dense storage arrays.
Được đề xuất
Test and Measurement
The AS4C256M16D3L-12BCN is used in oscilloscopes and signal analyzers for high-speed data acquisition and waveform storage. Its 4Gbit capacity allows capturing long records, and the 800MHz clock supports fast sampling rates. The 1.35V supply reduces power in portable instruments. The memory is interfaced with FPGAs or DSPs, providing high bandwidth for real-time processing. The low voltage and compact package make it suitable for benchtop and handheld devices, where space and power are limited.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho AS4C256M16D3L-12BCN — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | AS4C256M16D3LB-12BCN | AS4C256M16D3A-12BCN | AS4C256M16D3-12BCN | MT41K256M16HA-125 | IS43TR16512B-125KBLI | K4B4G1646E-BYMA |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory | Alliance Memory | Micron Technology | ISSI | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.5 V | 1.35 V | 1.35 V | 1.35 V |
| Max Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz |
| CAS Latency | 20 ns | 20 ns | 20 ns | 20 ns | 13.75 ns | 13.75 ns | 13.75 ns |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- Low voltage operation (1.35V) reduces power consumption by up to 20% compared to standard DDR3 (vsAS4C256M16D3-12BCN)
- Pin-compatible with multiple cross-brand DDR3L 4Gbit parts (vsMT41K256M16HA-125)
- RoHS compliant and halogen-free (vsK4B4G1646E-BYMA)
Ghi chú thiết kế
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/command signals. Keep trace lengths matched within +/- 0.5mm for each byte lane. Use ground planes beneath the memory area to reduce noise. Refer to the Alliance Memory layout guidelines in the datasheet for specific recommendations.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to each power pin. Use a bulk capacitor of 10uF near the memory. Ensure the 1.35V supply has low ripple (<50mV) and adequate current capability. The VDDQ supply should be separate or well-filtered to avoid noise coupling.
The AS4C256M16D3L-12BCN has a maximum operating temperature of 95C (Tc). For high-density systems, ensure adequate airflow or a heatsink to keep the case temperature below this limit. The FBGA package has a thermal resistance of approximately 20C/W, so power dissipation of 2W would raise the case temperature by 40C above ambient.
Thông tin tuân thủ
RoHS compliant and halogen-free per datasheet. Not AEC-Q100 qualified.
