AS4C256M16D3L-12BCN - 4Gbit DDR3L SDRAM 800MHz | Alliance Memory
Référence : AS4C256M16D3L-12BCN ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3 250,00 |
| 1 000 | $6 | $6 000,00 |
AS4C256M16D3L-12BCN Présentation
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at a reduced supply voltage of 1.35V, compared to standard DDR3's 1.5V. This lower voltage reduces power consumption by up to 20% while maintaining similar performance, making it ideal for power-sensitive applications such as laptops, embedded systems, and networking equipment. DDR3L is part of the DDR SDRAM family, which includes DDR, DDR2, DDR3, and DDR4, each offering increased speed and lower power.
Key features include a parallel interface with a 16-bit data bus, 800MHz clock speed, and a CAS latency of 20ns. The device supports JEDEC clock jitter specifications, ensuring reliable operation in high-speed systems. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for space-constrained designs.
The AS4C256M16D3L-12BCN utilizes advanced CMOS technology to achieve high density and low power consumption. It supports various burst lengths and programmable CAS latency, allowing flexibility in system design. The device also includes on-die termination (ODT) and dynamic ODT for improved signal integrity, reducing the need for external termination resistors.
Typical applications include networking equipment (routers, switches), industrial automation, embedded computing, and consumer electronics such as set-top boxes and smart TVs. Its low voltage and high bandwidth make it suitable for DDR3L-based systems requiring 4Gbit density.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ, which should be regulated accurately.
Alternatives de remplacement direct pour AS4C256M16D3L-12BCN — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec AS4C256M16D3L-12BCN (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, CAS Latency, Data Rate, Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
AS4C256M16D3LB-12BCN
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
AS4C256M16D3A-12BCN
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
AS4C256M16D3-12BCN
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →IS43TR16512B-125KBLI
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →AS4C256M16D3L-12BCN Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Taille de mémoire | 4 Gbit |
| Organisation de la mémoire | 256M x 16 |
| Largeur du bus de données | 16 bit |
| Fréquence d'horloge maximale | 800 MHz |
| Débit de données | 1600 Mbps |
| Latence CAS | 20 ns |
| Tension d'alimentation | 1.35 V |
| Boîtier | 96-FBGA (9x13 mm) |
| Style de montage | SMD/SMT |
| Plage de température de fonctionnement | 0C to +95C (Tc) |
| RoHS | Compliant |
| Sans halogène | Yes |
| Type d'interface | Parallel |
| Nombre de broches | 96 |
Configuration des broches de AS4C256M16D3L-12BCN
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDDQ — I/O power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VDD — Power supply |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VDDQ — I/O power supply |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | VSS — Ground |
| Broche C3 | VDD — Power supply |
| Broche C4 | VSS — Ground |
| Broche C5 | VDDQ — I/O power supply |
| Broche C6 | VSS — Ground |
| Broche C7 | VDD — Power supply |
| Broche C8 | VSS — Ground |
| Broche C9 | VDDQ — I/O power supply |
| Broche C10 | VSS — Ground |
| Broche C11 | VDD — Power supply |
| Broche C12 | VSS — Ground |
| Broche D1 | A0 — Address input 0 |
| Broche D2 | A1 — Address input 1 |
| Broche D3 | A2 — Address input 2 |
| Broche D4 | A3 — Address input 3 |
| Broche D5 | A4 — Address input 4 |
| Broche D6 | A5 — Address input 5 |
| Broche D7 | A6 — Address input 6 |
| Broche D8 | A7 — Address input 7 |
| Broche D9 | A8 — Address input 8 |
| Broche D10 | A9 — Address input 9 |
| Broche D11 | A10/AP — Address input 10 / Auto-precharge |
| Broche D12 | A11 — Address input 11 |
| Broche E1 | A12 — Address input 12 |
| Broche E2 | A13 — Address input 13 |
| Broche E3 | A14 — Address input 14 |
| Broche E4 | BA0 — Bank address 0 |
| Broche E5 | BA1 — Bank address 1 |
| Broche E6 | BA2 — Bank address 2 |
| Broche E7 | RAS# — Row address strobe |
| Broche E8 | CAS# — Column address strobe |
| Broche E9 | WE# — Write enable |
| Broche E10 | CS# — Chip select |
| Broche E11 | CKE — Clock enable |
| Broche E12 | ODT — On-die termination |
| Broche F1 | CK — Clock (positive) |
| Broche F2 | CK# — Clock (negative) |
| Broche F3 | VDD — Power supply |
| Broche F4 | VSS — Ground |
| Broche F5 | VDDQ — I/O power supply |
| Broche F6 | VSS — Ground |
| Broche F7 | VDD — Power supply |
| Broche F8 | VSS — Ground |
| Broche F9 | VDDQ — I/O power supply |
| Broche F10 | VSS — Ground |
| Broche F11 | VDD — Power supply |
| Broche F12 | VSS — Ground |
| Broche G1 | DM0 — Data mask 0 |
| Broche G2 | DM1 — Data mask 1 |
| Broche G3 | VSS — Ground |
| Broche G4 | VDD — Power supply |
| Broche G5 | VSS — Ground |
| Broche G6 | VDDQ — I/O power supply |
| Broche G7 | VSS — Ground |
| Broche G8 | VDD — Power supply |
| Broche G9 | VSS — Ground |
| Broche G10 | VDDQ — I/O power supply |
| Broche G11 | VSS — Ground |
| Broche G12 | VDD — Power supply |
| Broche H1 | DQS0 — Data strobe 0 |
| Broche H2 | DQS0# — Data strobe 0 (negative) |
| Broche H3 | DQS1 — Data strobe 1 |
| Broche H4 | DQS1# — Data strobe 1 (negative) |
| Broche H5 | VDDQ — I/O power supply |
| Broche H6 | VSS — Ground |
| Broche H7 | VDD — Power supply |
| Broche H8 | VSS — Ground |
| Broche H9 | VDDQ — I/O power supply |
| Broche H10 | VSS — Ground |
| Broche H11 | VDD — Power supply |
| Broche H12 | VSS — Ground |
| Broche J1 | RESET# — Reset (active low) |
| Broche J2 | VDD — Power supply |
| Broche J3 | VSS — Ground |
| Broche J4 | VDDQ — I/O power supply |
| Broche J5 | VSS — Ground |
| Broche J6 | VDD — Power supply |
| Broche J7 | VSS — Ground |
| Broche J8 | VDDQ — I/O power supply |
| Broche J9 | VSS — Ground |
| Broche J10 | VDD — Power supply |
| Broche J11 | VSS — Ground |
| Broche J12 | VDDQ — I/O power supply |
| Broche K1 | VSS — Ground |
| Broche K2 | VDDQ — I/O power supply |
| Broche K3 | VSS — Ground |
| Broche K4 | VDD — Power supply |
| Broche K5 | VSS — Ground |
| Broche K6 | VDDQ — I/O power supply |
| Broche K7 | VSS — Ground |
| Broche K8 | VDD — Power supply |
| Broche K9 | VSS — Ground |
| Broche K10 | VDDQ — I/O power supply |
| Broche K11 | VSS — Ground |
| Broche K12 | VDD — Power supply |
| Broche L1 | VDDQ — I/O power supply |
| Broche L2 | VSS — Ground |
| Broche L3 | VDD — Power supply |
| Broche L4 | VSS — Ground |
| Broche L5 | VDDQ — I/O power supply |
| Broche L6 | VSS — Ground |
| Broche L7 | VDD — Power supply |
| Broche L8 | VSS — Ground |
| Broche L9 | VDDQ — I/O power supply |
| Broche L10 | VSS — Ground |
| Broche L11 | VDD — Power supply |
| Broche L12 | VSS — Ground |
| Broche M1 | VSS — Ground |
| Broche M2 | VDD — Power supply |
| Broche M3 | VSS — Ground |
| Broche M4 | VDDQ — I/O power supply |
| Broche M5 | VSS — Ground |
| Broche M6 | VDD — Power supply |
| Broche M7 | VSS — Ground |
| Broche M8 | VDDQ — I/O power supply |
| Broche M9 | VSS — Ground |
| Broche M10 | VDD — Power supply |
| Broche M11 | VSS — Ground |
| Broche M12 | VDDQ — I/O power supply |
| Broche N1 | VDD — Power supply |
| Broche N2 | VSS — Ground |
| Broche N3 | VDDQ — I/O power supply |
| Broche N4 | VSS — Ground |
| Broche N5 | VDD — Power supply |
| Broche N6 | VSS — Ground |
| Broche N7 | VDDQ — I/O power supply |
| Broche N8 | VSS — Ground |
| Broche N9 | VDD — Power supply |
| Broche N10 | VSS — Ground |
| Broche N11 | VDDQ — I/O power supply |
| Broche N12 | VSS — Ground |
Applications typiques
AS4C256M16D3L-12BCN convient pour 6 applications: Networking Equipment, Industrial Automation, Embedded Computing, Consumer Electronics, Data Storage Systems, Test and Measurement.
Networking Equipment
The AS4C256M16D3L-12BCN provides high-bandwidth, low-power memory for routers and switches. Its 800MHz clock and 16-bit bus enable fast packet processing, while 1.35V operation reduces power in always-on network devices. The 4Gbit density supports large routing tables and buffering. In a router, it is used as main memory for the CPU and NPU, with the parallel interface connecting directly to the memory controller. Performance is critical for line-rate forwarding, and the DDR3L interface ensures low latency. Power dissipation is minimized due to the low voltage, which is essential for fanless designs.
Recommandé
Industrial Automation
In industrial controllers and PLCs, the AS4C256M16D3L-12BCN offers reliable, low-power memory for real-time data logging and control algorithms. Its 4Gbit capacity allows storing large process variables, and the 1.35V supply is compatible with energy-efficient industrial power rails. The 96-FBGA package withstands harsh environments with proper thermal management. The memory is used in conjunction with an MCU or FPGA, providing fast access for deterministic control loops. The DDR3L interface supports high-speed data transfer, while the low voltage reduces heat generation in sealed enclosures. This makes it ideal for factory automation and robotics.
Recommandé
Embedded Computing
The AS4C256M16D3L-12BCN is ideal for embedded computing modules, such as single-board computers and edge gateways. Its 4Gbit density provides ample memory for operating systems and applications, while the 1.35V operation reduces power consumption in battery-powered or thermally constrained systems. The 800MHz clock enables responsive multitasking. In an embedded system, the memory is typically connected to a processor's memory controller, with the parallel interface simplifying PCB layout. The low voltage and high bandwidth make it suitable for IoT gateways and industrial PCs, where reliability and efficiency are paramount.
Recommandé
Consumer Electronics
For set-top boxes, smart TVs, and gaming consoles, the AS4C256M16D3L-12BCN provides high-speed memory for multimedia processing. Its 4Gbit capacity supports HD video streaming and multitasking, while the 1.35V supply helps meet energy efficiency standards. The 96-FBGA package is compact, fitting into slim device designs. The memory is used for buffering video frames and storing application data, with the parallel interface ensuring high throughput. The low power consumption is beneficial for always-on devices, and the RoHS compliance meets environmental regulations.
Recommandé
Data Storage Systems
In NAS and SSD controllers, the AS4C256M16D3L-12BCN serves as cache memory, providing fast access to frequently used data. Its 4Gbit capacity and 800MHz speed enable high throughput, while the 1.35V operation reduces power in storage devices that run 24/7. The parallel interface connects directly to the controller, and the low voltage helps meet energy efficiency requirements. The memory's reliability is crucial for data integrity, and the FBGA package offers good thermal performance in dense storage arrays.
Recommandé
Test and Measurement
The AS4C256M16D3L-12BCN is used in oscilloscopes and signal analyzers for high-speed data acquisition and waveform storage. Its 4Gbit capacity allows capturing long records, and the 800MHz clock supports fast sampling rates. The 1.35V supply reduces power in portable instruments. The memory is interfaced with FPGAs or DSPs, providing high bandwidth for real-time processing. The low voltage and compact package make it suitable for benchtop and handheld devices, where space and power are limited.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour AS4C256M16D3L-12BCN — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | AS4C256M16D3LB-12BCN | AS4C256M16D3A-12BCN | AS4C256M16D3-12BCN | MT41K256M16HA-125 | IS43TR16512B-125KBLI | K4B4G1646E-BYMA |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) | 96-FBGA (9x13 mm) |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory | Alliance Memory | Micron Technology | ISSI | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.5 V | 1.35 V | 1.35 V | 1.35 V |
| Max Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz |
| CAS Latency | 20 ns | 20 ns | 20 ns | 20 ns | 13.75 ns | 13.75 ns | 13.75 ns |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Low voltage operation (1.35V) reduces power consumption by up to 20% compared to standard DDR3 (vs AS4C256M16D3-12BCN)
- Pin-compatible with multiple cross-brand DDR3L 4Gbit parts (vs MT41K256M16HA-125)
- RoHS compliant and halogen-free (vs K4B4G1646E-BYMA)
Notes de conception
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/command signals. Keep trace lengths matched within +/- 0.5mm for each byte lane. Use ground planes beneath the memory area to reduce noise. Refer to the Alliance Memory layout guidelines in the datasheet for specific recommendations.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to each power pin. Use a bulk capacitor of 10uF near the memory. Ensure the 1.35V supply has low ripple (<50mV) and adequate current capability. The VDDQ supply should be separate or well-filtered to avoid noise coupling.
The AS4C256M16D3L-12BCN has a maximum operating temperature of 95C (Tc). For high-density systems, ensure adequate airflow or a heatsink to keep the case temperature below this limit. The FBGA package has a thermal resistance of approximately 20C/W, so power dissipation of 2W would raise the case temperature by 40C above ambient.
Informations de conformité
RoHS compliant and halogen-free per datasheet. Not AEC-Q100 qualified.
