H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix
MPN: H5TC4G63CFR-H9A ✓ نشطH5TC4G63CFR-H9A نظرة عامة
DDR3L SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining backward compatibility with DDR3 environments. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is widely used in laptops, embedded systems, and networking equipment where energy efficiency is critical.
Key features include fully differential clock inputs (CK, CK), differential data strobe (DQS, DQS), and an on-chip DLL that aligns DQ, DQS, and DQS transitions with CK transitions. The DM (data mask) function masks write data at both rising and falling edges, ensuring data integrity. The device supports burst lengths of 8 and 4 (with burst chop), and features programmable CAS latency and additive latency for flexible timing.
The H5TC4G63CFR-H9A is designed for high-bandwidth, low-power main memory applications. Its 4Gb density and x16 organization make it ideal for applications requiring large memory capacity with a moderate bus width. The 96-ball TFBGA package offers excellent thermal and electrical performance, with a ball pitch of 0.8mm, facilitating high-density PCB layouts.
Typical applications include laptops and ultrabooks, embedded computing, networking switches and routers, and industrial automation systems. The low operating voltage and high bandwidth make it suitable for battery-powered devices and energy-conscious designs.
When designing with this component, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. The device requires a stable 1.35V supply and careful signal integrity management for the high-speed data bus. Refer to the datasheet for detailed timing parameters and PCB layout guidelines.
بدائل مباشرة لـ H5TC4G63CFR-H9A — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع H5TC4G63CFR-H9A (نفس عامل الشكل والبصمة) — يختلف في Package, Burst Length, Supply Voltage, CAS Latency, Data Rate.
H5TC4G63AFR-H9A
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←H5TC4G63CFR-H9I
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5TC4G63CFR-H9J
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646E-BYK0
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16HA-125
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$6.3636 / وحدة
عرض ورقة البيانات ←IS43TR16256AL-125KBL
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5TC4G63CFR-H9A الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| Memory Density | 4Gb (4294967296 bit) |
| التنظيم | 256M x 16 |
| Supply Voltage (VDD) | 1.35V + 0.100 / - 0.067V |
| Supply Voltage (VDDQ) | 1.35V + 0.100 / - 0.067V |
| العلبة | 96-ball TFBGA |
| Number of Terminals | 96 |
| Package Shape | RECTANGULAR |
| حالة RoHS | Compliant |
| Lead-Free | Yes |
| خالٍ من الهالوجين | Yes |
| Burst Length | 8, 4 (with burst chop) |
| Differential Clock Inputs | Yes (CK, CK) |
| Differential Data Strobe | Yes (DQS, DQS) |
| On-Chip DLL | Yes |
| DM (Data Mask) | Yes |
تكوين أطراف H5TC4G63CFR-H9A
| دبوس A1 | VDD — Power supply |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data input/output 2 |
| دبوس A6 | DQ3 — Data input/output 3 |
| دبوس A7 | VDDQ — Power supply for output |
| دبوس A8 | DQ4 — Data input/output 4 |
| دبوس A9 | DQ5 — Data input/output 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data input/output 6 |
| دبوس A12 | DQ7 — Data input/output 7 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ8 — Data input/output 8 |
| دبوس B3 | DQ9 — Data input/output 9 |
| دبوس B4 | VDD — Power supply |
| دبوس B5 | DQ10 — Data input/output 10 |
| دبوس B6 | DQ11 — Data input/output 11 |
| دبوس B7 | VSS — Ground |
| دبوس B8 | DQ12 — Data input/output 12 |
| دبوس B9 | DQ13 — Data input/output 13 |
| دبوس B10 | VDDQ — Power supply for output |
| دبوس B11 | DQ14 — Data input/output 14 |
| دبوس B12 | DQ15 — Data input/output 15 |
| دبوس C1 | VDDQ — Power supply for output |
| دبوس C2 | VSS — Ground |
| دبوس C3 | VDD — Power supply |
| دبوس C4 | VSS — Ground |
| دبوس C5 | VDDQ — Power supply for output |
| دبوس C6 | VSS — Ground |
| دبوس C7 | VDD — Power supply |
| دبوس C8 | VSS — Ground |
| دبوس C9 | VDDQ — Power supply for output |
| دبوس C10 | VSS — Ground |
| دبوس C11 | VDD — Power supply |
| دبوس C12 | VSS — Ground |
| دبوس D1 | CK — Clock input |
| دبوس D2 | CK — Complementary clock input |
| دبوس D3 | VSS — Ground |
| دبوس D4 | CKE — Clock enable |
| دبوس D5 | VDD — Power supply |
| دبوس D6 | VSS — Ground |
| دبوس D7 | VDDQ — Power supply for output |
| دبوس D8 | VSS — Ground |
| دبوس D9 | VDD — Power supply |
| دبوس D10 | VSS — Ground |
| دبوس D11 | VDDQ — Power supply for output |
| دبوس D12 | VSS — Ground |
| دبوس E1 | RAS — Row address strobe |
| دبوس E2 | CAS — Column address strobe |
| دبوس E3 | WE — Write enable |
| دبوس E4 | CS — Chip select |
| دبوس E5 | VDD — Power supply |
| دبوس E6 | VSS — Ground |
| دبوس E7 | VDDQ — Power supply for output |
| دبوس E8 | VSS — Ground |
| دبوس E9 | VDD — Power supply |
| دبوس E10 | VSS — Ground |
| دبوس E11 | VDDQ — Power supply for output |
| دبوس E12 | VSS — Ground |
| دبوس F1 | A0 — Address input 0 |
| دبوس F2 | A1 — Address input 1 |
| دبوس F3 | A2 — Address input 2 |
| دبوس F4 | A3 — Address input 3 |
| دبوس F5 | VDD — Power supply |
| دبوس F6 | VSS — Ground |
| دبوس F7 | VDDQ — Power supply for output |
| دبوس F8 | VSS — Ground |
| دبوس F9 | VDD — Power supply |
| دبوس F10 | VSS — Ground |
| دبوس F11 | VDDQ — Power supply for output |
| دبوس F12 | VSS — Ground |
| دبوس G1 | A4 — Address input 4 |
| دبوس G2 | A5 — Address input 5 |
| دبوس G3 | A6 — Address input 6 |
| دبوس G4 | A7 — Address input 7 |
| دبوس G5 | VDD — Power supply |
| دبوس G6 | VSS — Ground |
| دبوس G7 | VDDQ — Power supply for output |
| دبوس G8 | VSS — Ground |
| دبوس G9 | VDD — Power supply |
| دبوس G10 | VSS — Ground |
| دبوس G11 | VDDQ — Power supply for output |
| دبوس G12 | VSS — Ground |
| دبوس H1 | A8 — Address input 8 |
| دبوس H2 | A9 — Address input 9 |
| دبوس H3 | A10/AP — Address input 10 / Auto-precharge |
| دبوس H4 | A11 — Address input 11 |
| دبوس H5 | VDD — Power supply |
| دبوس H6 | VSS — Ground |
| دبوس H7 | VDDQ — Power supply for output |
| دبوس H8 | VSS — Ground |
| دبوس H9 | VDD — Power supply |
| دبوس H10 | VSS — Ground |
| دبوس H11 | VDDQ — Power supply for output |
| دبوس H12 | VSS — Ground |
| دبوس J1 | A12 — Address input 12 |
| دبوس J2 | A13 — Address input 13 |
| دبوس J3 | BA0 — Bank address 0 |
| دبوس J4 | BA1 — Bank address 1 |
| دبوس J5 | VDD — Power supply |
| دبوس J6 | VSS — Ground |
| دبوس J7 | VDDQ — Power supply for output |
| دبوس J8 | VSS — Ground |
| دبوس J9 | VDD — Power supply |
| دبوس J10 | VSS — Ground |
| دبوس J11 | VDDQ — Power supply for output |
| دبوس J12 | VSS — Ground |
| دبوس K1 | BA2 — Bank address 2 |
| دبوس K2 | ODT — On-die termination |
| دبوس K3 | VSS — Ground |
| دبوس K4 | VDD — Power supply |
| دبوس K5 | VSS — Ground |
| دبوس K6 | VDDQ — Power supply for output |
| دبوس K7 | VSS — Ground |
| دبوس K8 | VDD — Power supply |
| دبوس K9 | VSS — Ground |
| دبوس K10 | VDDQ — Power supply for output |
| دبوس K11 | VSS — Ground |
| دبوس K12 | VDD — Power supply |
| دبوس L1 | DM — Data mask |
| دبوس L2 | DQS — Data strobe |
| دبوس L3 | DQS — Complementary data strobe |
| دبوس L4 | VSS — Ground |
| دبوس L5 | VDDQ — Power supply for output |
| دبوس L6 | VSS — Ground |
| دبوس L7 | VDD — Power supply |
| دبوس L8 | VSS — Ground |
| دبوس L9 | VDDQ — Power supply for output |
| دبوس L10 | VSS — Ground |
| دبوس L11 | VDD — Power supply |
| دبوس L12 | VSS — Ground |
| دبوس M1 | VSS — Ground |
| دبوس M2 | VDD — Power supply |
| دبوس M3 | VSS — Ground |
| دبوس M4 | VDDQ — Power supply for output |
| دبوس M5 | VSS — Ground |
| دبوس M6 | VDD — Power supply |
| دبوس M7 | VSS — Ground |
| دبوس M8 | VDDQ — Power supply for output |
| دبوس M9 | VSS — Ground |
| دبوس M10 | VDD — Power supply |
| دبوس M11 | VSS — Ground |
| دبوس M12 | VDDQ — Power supply for output |
التطبيقات النموذجية
H5TC4G63CFR-H9A مناسب لـ 6 التطبيقs: Laptops and Ultrabooks, Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Networking and Communications.
Laptops and Ultrabooks
The H5TC4G63CFR-H9A is ideal for laptops and ultrabooks due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and x16 organization provide sufficient memory capacity for mainstream computing tasks. The 96-ball TFBGA package allows for compact PCB designs, essential for thin and light form factors. With a data rate of up to 1866 Mbps (typical for DDR3L), it delivers the bandwidth needed for smooth multitasking and multimedia applications. The low operating voltage also reduces heat generation, improving thermal management in confined spaces.
موصى به
Embedded Computing
In embedded systems, the H5TC4G63CFR-H9A provides high-density, low-power memory for applications such as industrial PCs, point-of-sale terminals, and medical devices. Its 1.35V supply reduces power consumption, which is critical for fanless designs. The x16 organization simplifies interfacing with embedded processors that have 16-bit memory buses. The device's support for burst lengths of 8 and 4 allows efficient data transfers, and the on-chip DLL ensures reliable timing. The 96-ball TFBGA package is suitable for automated assembly, and the RoHS compliance meets environmental regulations.
موصى به
Networking Equipment
The H5TC4G63CFR-H9A is well-suited for networking switches and routers, where high bandwidth and low power are essential. Its 4Gb density allows for large packet buffers, and the x16 organization matches common network processor interfaces. The low 1.35V operation reduces power dissipation in dense line cards, improving system reliability. The differential clock and data strobe inputs ensure signal integrity at high speeds, critical for error-free data transmission. The device's RoHS compliance is important for global market access.
موصى به
Industrial Automation
In industrial automation, the H5TC4G63CFR-H9A provides reliable memory for PLCs, robotics controllers, and HMI systems. Its wide operating temperature range (if specified) supports harsh environments. The low power consumption reduces heat, which is beneficial in sealed enclosures. The 96-ball TFBGA package offers good thermal performance, and the device's high bandwidth supports real-time data processing. The RoHS compliance ensures environmental safety in industrial settings.
موصى به
Consumer Electronics
The H5TC4G63CFR-H9A is used in consumer electronics such as smart TVs, set-top boxes, and gaming consoles. Its 4Gb density provides ample memory for multimedia applications, and the low 1.35V operation reduces power consumption, which is important for energy-efficient devices. The x16 organization is compatible with many SoCs, and the compact TFBGA package allows for slim product designs. The device's high bandwidth supports smooth video playback and responsive user interfaces.
موصى به
Networking and Communications
The H5TC4G63CFR-H9A is also used in communication infrastructure such as base stations and network appliances. Its high density and low power make it suitable for buffer memory in packet processing. The differential signaling ensures reliable operation at high frequencies, and the on-chip DLL helps maintain timing accuracy. The device's RoHS compliance is essential for global deployment. The 96-ball TFBGA package is suitable for high-density PCB designs.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ H5TC4G63CFR-H9A — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | H5TC4G63AFR-H9A | H5TC4G63CFR-H9I | H5TC4G63CFR-H9J | K4B4G1646E-BYK0 | MT41K256M16HA-125 | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA | 96-ball FBGA | 96-ball TFBGA |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | Samsung | Micron | ISSI |
| Memory Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Speed Grade | H9A (1866 Mbps) | H9A (1866 Mbps) | H9I (1600 Mbps) | H9J (1333 Mbps) | BYK0 (1866 Mbps) | -125 (1600 Mbps) | -125 (1600 Mbps) |
| Data Rate | 1866 Mbps | 1866 Mbps | 1600 Mbps | 1333 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps |
أبرز الفروقات
- Low power consumption (مقابلK4B4G1646E-BYK0)
- High speed grade (مقابلMT41K256M16HA-125)
- Same-brand availability (مقابلIS43TR16256AL-125KBL)
ملاحظات التصميم
Ensure stable 1.35V supply for VDD and VDDQ. Use low-ESR decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each power pin to minimize noise. The tolerance is +0.100V / -0.067V, so a well-regulated supply is critical. Consider using a dedicated DDR3L power solution to maintain voltage accuracy under load transients.
For high-speed DDR3L signals, maintain controlled impedance (typically 50 ohms single-ended, 100 ohms differential) and keep trace lengths matched within 50 mils. Place the device close to the controller to minimize stub effects. Use ground planes to provide a return path and reduce EMI. Follow the layout guidelines in the SK hynix datasheet for optimal signal integrity.
The H5TC4G63CFR-H9A in a 96-ball TFBGA package has a thermal resistance that depends on PCB design. Ensure adequate thermal vias and copper pour under the package to dissipate heat. The device's low 1.35V operation reduces power dissipation, but in high-density systems, monitor junction temperature to stay within the specified operating range.
معلومات الامتثال
RoHS compliant and lead-free/halogen-free per datasheet. REACH and conflict minerals status not specified in provided data.
