Power MOSFET Drivers
Products (426)
IRS2308STRPBF - 600V Half-Bridge Gate Driver | Infineon
The Infineon IRS2308STRPBF is a high-voltage, high-speed power MOSFET and IGBT half-bridge gate driver IC housed in an 8-pin SOIC package. It provides 600 V tolerance on the high-side floating channel and supports a gate drive supply range from 10 V to 20 V, with typical 0.29 A source and 0.6 A sink output currents, making it well suited for driving the upper and lower switches in half-bridge power stages. A half-bridge gate driver is a power-management IC that produces two synchronized gate-drive signals (high-side and low-side) for the two switches in a half-bridge converter topology. In the broader taxonomy, it belongs to gate drivers -> power MOSFET/IGBT drivers -> power management ICs -> integrated circuits. These drivers sit between a low-voltage logic controller (3.3 V CMOS or LSTTL) and the high-power switching devices, providing level shifting, dead-time control, and shoot-through protection that discrete gate-drive circuits cannot deliver reliably at high dV/dt. Key features include integrated shoot-through protection, 220 ns typical delay time, and a floating channel designed for bootstrap operation. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The IRS2308 is fully operational to +600 V, tolerant to negative transient voltage and high dV/dt, and offers undervoltage lockout (UVLO) protection for both VCC and VBS supplies to prevent the power switches from operating in a partially-enhanced linear region. Architecturally, the IRS2308 uses a level-shifted high-side channel with a floating bootstrap supply (VBS) referenced to the switching node (VS), enabling true ground-referenced low-side control while the high-side driver swings with the phase node. This eliminates the need for an isolated bias supply and significantly simplifies half-bridge, full-bridge, and three-phase inverter designs. Logic inputs are compatible with 3.3 V CMOS or LSTTL outputs, allowing direct connection to microcontrollers and DSPs. Typical applications include motor drive inverters, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), solar inverters, induction cooking, and general-purpose high-voltage half-bridge converters. Its 600 V rating makes it a strong fit for 120/230 V AC line-rectified bus applications up to 400 VDC. When designing with this part, ensure the bootstrap capacitor and diode are sized for the high-side quiescent current and the maximum switching frequency. Place the VCC bypass capacitor (typically 0.1 uF ceramic) as close as possible to pins 1 and 8, and keep the gate-drive loop area minimal to limit ringing at the power switch gate.
IRS2334MTRPBF - 600V 3-Phase Gate Driver HVIC, 28-MLPQ | Infineon
The Infineon IRS2334MTRPBF is a 600 V three-phase gate driver IC (HVIC) with typical 0.2 A source and 0.35 A sink gate-drive currents, integrated shoot-through protection, and a non-inverting input logic structure, packaged in a 28-pin MLPQ (5x5 mm) thermally-enhanced surface-mount package. According to the Infineon IRS2334M datasheet, this device is designed to drive six IGBT or MOSFET power switches arranged in a three-phase bridge, making it a complete bootstrap-ready high-side/low-side driver solution for motor and inverter systems up to 600 V bus rails. A three-phase gate driver HVIC (high-voltage integrated circuit) is a semiconductor device that sits between low-voltage control logic (microcontroller, DSP, or FPGA) and the high-voltage power stage. It belongs to the family of gate driver ICs, which are categorized within power management and motor/power-conversion semiconductors. The HVIC integrates level shifting, bootstrap circuitry, and dead-time management so that three half-bridges can be driven from a single low-voltage supply. The IRS2334MTRPBF features built-in shoot-through protection (preventing simultaneous turn-on of high-side and low-side switches in the same leg), undervoltage lockout (UVLO) for both VCC and VBS supplies, a typical 0.2 A source and 0.35 A sink gate-drive capability, and a 600 V absolute maximum offset voltage rating on the high-side channels. Its MLPQ-28 5x5 mm package exposes a thermal pad that lowers junction-to-ambient thermal resistance for high-frequency switching applications. The IC is fabricated using Infineon's Gen5 HVIC process, which combines CMOS input logic with high-voltage level-shifting DMOS transistors. This monolithic approach eliminates the need for optocouplers or pulse transformers, providing 600 V transient isolation through the silicon itself and supporting switching frequencies up to the UVLO/impedance-limited boundary. Typical applications include three-phase motor drives for HVAC compressors, fans, and pumps; industrial inverters; variable-frequency drives (VFDs); and switched-mode power-supply (SMPS) front-end stages. The device is also used in servo drives and small electric-vehicle traction inverters where space-constrained 28-MLPQ packaging is preferred. When designing with the IRS2334MTRPBF, carefully select bootstrap diode and capacitor values based on switching frequency and high-side quiescent current. A common design pitfall is undersizing the bootstrap capacitor, which causes high-side UVLO tripping under continuous high-side-on conditions. This page synthesizes distributor pricing, package-level pinout, drop-in compatible alternatives, and practical design notes not found in the standalone datasheet, helping engineers evaluate and source the IRS2334MTRPBF more efficiently.
IRS2453DSTRPBF - 600V Self-Oscillating Full-Bridge Gate Driver IC | Infineon
The Infineon IRS2453DSTRPBF is a 600 V self-oscillating full-bridge gate driver IC housed in a 14-pin SOIC (0.154", 3.90 mm) package. It integrates a high-voltage full-bridge gate driver with a front-end oscillator patterned after the industry-standard CMOS 555 timer, providing typical 0.18 A source and 0.26 A sink gate-drive currents for IGBTs and MOSFETs. A gate driver IC is a power-management device that level-shifts low-voltage logic PWM signals into the high-voltage, high-current drive required to switch the gate of a discrete power transistor (IGBT or MOSFET). Self-oscillating variants such as the IRS2453D family remove the need for an external PWM controller by generating the switching frequency with an internal RC timing network, simplifying the bill of materials for motor drive, ballast, and Class D audio converter stages. Within the broader taxonomy, gate drivers sit below power MOSFETs/IGBTs as the interface layer in the power-management hierarchy. Key features of the IRS2453DSTRPBF include integrated bootstrap FETs, programmable oscillator frequency set by a single external resistor-capacitor pair, a shutdown pin, deadtime control, and HVIC plus latch-immune CMOS technology for rugged monolithic construction. The 600 V blocking voltage allows it to drive low-side and high-side switches directly off rectified mains up to 220 VAC without an external level shifter. The IRS2453D family is based on the popular IR2153 half-bridge gate driver, extending the architecture from half-bridge to full-bridge. The high pulse-current buffer stage ensures fast gate rise and fall times, reducing switching losses in the driven power MOSFET or IGBT. The wide VCC range supports both 12 V and 15 V logic supplies typical of motor-control and SMPS designs. Typical applications include DC-DC converters, electronic ballasts for fluorescent and HID lamps, Class D audio amplifiers, induction heating, and small industrial motor drives (single-phase or three-phase with replication). The integrated oscillator makes it especially attractive for cost-sensitive ballast and converter designs that want to eliminate the dedicated PWM controller. When designing with this device, ensure the bootstrap capacitors are sized to supply the high-side gate charge during the full on-time without droop below the UVLO threshold. The shutdown pin must be pulled high (or left open per the datasheet) during normal operation to avoid unintended disable events. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes for the IRS2453DSTRPBF that go beyond the manufacturer datasheet.
IRS4427STRPBF - 25V Dual Low-Side Gate Driver, 3.3A | Infineon
The Infineon IRS4427STRPBF is a 25V dual low-side gate driver IC designed to switch IGBTs and power MOSFETs, housed in an 8-pin SOIC (DSO-8) package. It delivers 2.3A source current and 3.3A sink current with 50ns typical propagation delay per channel, and operates from a 6V to 20V gate-drive supply. The two independent channels use CMOS Schmitt-triggered inputs that are 3.3V and 5V logic compatible, enabling direct connection to modern microcontrollers and DSPs without level shifters. A gate driver IC (also called a MOSFET driver or IGBT driver) is a power-management device that sits between a low-power logic controller and a high-power switching transistor. It multiplies the current and voltage capability of the logic signal so the controller can toggle the gate of a MOSFET or IGBT efficiently. Within the broader hierarchy, the IRS4427 belongs to: gate driver -> driver IC -> power management IC -> semiconductor. Low-side drivers like the IRS4427 reference the load to the positive rail, making them simpler and cheaper than half-bridge or high-side drivers when the switching node is ground-referenced. Key features include matched propagation delay between the two channels for synchronous switching, non-inverting logic (output in phase with input), under-voltage lockout protection, and 2.3A/3.3A peak source/sink capability. The IRS4427 is pin-compatible with the IRS4428S variant, which provides one inverting and one non-inverting channel; it is also pin-compatible with the legacy IR4427 (pre-Infineon part number from International Rectifier, which Infineon acquired in 2015). The architecture uses a CMOS input stage with Schmitt-trigger hysteresis for noise immunity, followed by a push-pull output stage capable of delivering fast gate transitions. The high sink current (3.3A) is particularly valuable for discharging MOSFET gate charges quickly, minimizing switching losses in high-frequency applications. Two independent channels allow driving two separate switches, such as the two low-side FETs in a synchronous buck converter. Typical applications include driving the low-side MOSFET in DC-DC converters, motor control H-bridges, solenoid drivers, Class-D audio amplifiers, and general power switching. The dual-channel configuration is well suited for synchronous rectification in switch-mode power supplies (SMPS). When designing with this driver, place a 1uF ceramic bypass capacitor close to VCC to handle the high di/dt of gate-charge transfer, and keep the gate-drive traces short to minimize parasitic inductance. The IRS4427 outputs are designed to drive MOSFET gates directly; no external buffer is needed for typical gate charges up to 50nC. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers source and apply the IRS4427STRPBF with confidence.
IRS4428STRPBF - 25V Dual Low-Side 3.3A Gate Driver | Infineon
The Infineon IRS4428STRPBF is a dual low-side gate driver IC delivering 3.3 A peak output current in an 8-pin SOIC package with tape-and-reel packaging. It operates from a 6 V to 20 V gate-drive supply range and supports input logic levels down to 3.3 V, making it directly compatible with modern microcontrollers and DSPs. Each of the two independent driver channels is CMOS Schmitt-triggered and provides matched propagation delay for tight timing alignment in half-bridge or synchronous-rectifier topologies. A low-side gate driver is an integrated circuit that buffers low-power logic signals (such as a PWM output from a microcontroller) into the higher-current, fast-switching waveforms required to charge and discharge the gate of a power MOSFET, IGBT, or GaN transistor sitting on the low (source/emitter) side of the switching node. Low-side drivers sit within the broader hierarchy of gate-driver ICs, which themselves belong to power-management semiconductors; they are essential whenever logic-level signals cannot directly drive a power switch fast enough or hard enough to minimize switching losses. Key features include 3.3 V and 5 V logic compatibility on the inputs, a typical 50 ns propagation delay, matched channel-to-channel delay for symmetric drive timing, an inverting/non-inverting input pair, and under-voltage lockout (UVLO) on the VCC rail. The outputs source/sink up to 2.3 A peak per channel per the digchip datasheet excerpt, with 3.3 A peak commonly quoted by Infineon marketing material for the IRS4428 family. The 8-SOIC surface-mount package provides a compact footprint for high-density power boards. Internally, the IRS4428S uses a CMOS push-pull output stage optimized for sub-100 ns transitions at the gate of standard power MOSFETs. The matched propagation delay between the two channels (typically within a few nanoseconds) ensures balanced drive timing, which is critical in synchronous rectifiers and dual-switch applications where timing mismatch translates directly into shoot-through risk or efficiency loss. Typical applications include half-bridge and full-bridge motor drives, synchronous-rectifier gate drive in DC-DC converters, high-frequency switch-mode power supplies (SMPS), Class-D audio amplifiers, and industrial low-side switching of IGBT/MOSFET loads. The wide 6 V to 20 V VCC range allows direct drive of standard N-channel MOSFETs from a 12 V bus without an auxiliary charge pump. When designing with this part, place the VCC bypass capacitor (typically 0.1 uF ceramic) as close as possible to pin 8, and ensure the logic inputs are tied to a defined state when not driven to prevent unintended switching. The matched delay specification simplifies timing analysis in dual-channel designs.
ISP452HUMA1 - 700mA Smart High-Side Switch SOT-223-4 | Infineon
The Infineon ISP452HUMA1 is a 700 mA smart high-side power switch housed in a PG-SOT223-4 surface-mount package, designed for industrial high-side load driving with ĀµC-compatible logic input. It integrates a vertical N-channel power FET with charge pump, ground-referenced CMOS input, and Smart SIPMOS technology monolithically on a single die. A high-side switch is a power-distribution topology in which the MOSFET is placed between the supply rail and the load, allowing the load to be tied to ground. Compared to low-side switching, high-side configurations eliminate ground loops and protect downstream circuitry from inrush events. The ISP452HUMA1 fits within the broader hierarchy: high-side switch ā load driver ā power distribution switch ā PMIC ā power management IC ā semiconductor. Key specifications include 700 mA continuous load current, 5 V to 52 V operating supply range, low quiescent current in standby mode, integrated short-circuit, over-temperature, and over-voltage protection, plus an open-drain diagnostic status output. The CMOS-compatible input directly interfaces with 3.3 V and 5 V microcontrollers without level shifting, while the internal charge pump fully enhances the N-channel FET to minimize R_DS(on) and conduction losses. Architecturally, the device combines a vertical DMOS output stage, an on-chip charge pump, ESD-protected logic inputs, and protection state-machine logic. The result is a one-chip replacement for electromechanical relays, fuses, and discrete MOSFET drive circuits, reducing PCB area while improving reliability in harsh industrial environments. Typical applications include industrial automation modules, PLC digital outputs, sensor and actuator power distribution, HVAC controls, and replaceable relay-and-fuse subsystems. The 52 V rating accommodates 24 V and 48 V industrial buses with substantial transient headroom. A key design consideration is thermal management: at 700 mA continuous, conduction losses scale with R_DS(on), so copper pour area and possible PCB thermal vias are required to keep junction temperature within the ā40 Ā°C to +125 Ā°C operating range. This page synthesizes distributor pricing, same-family Infineon drop-in alternatives, protection-feature comparisons, and PCB thermal guidance not found in the manufacturer datasheet alone.
ISP742RIFUMA1 - 400mA Smart High-Side Switch | Infineon
The Infineon ISP742RIFUMA1 is a smart high-side power switch rated for 400 mA continuous load current in a PG-DSO-8-24 package. It is a 1:1 N-channel MOSFET driver with integrated protection features designed for industrial applications including PLC systems, industrial automation, and sensor power distribution. A high-side switch is a semiconductor device that controls power delivery from a positive supply rail to a load by switching on the positive (high) side rather than the low side. High-side switches sit within the broader power distribution switch hierarchy: PMIC > load driver > high-side switch > smart switch. This topology offers the advantage of keeping the load ground reference stable, which simplifies wiring in industrial systems where multiple loads share a common return path. Key features of the ISP742RIFUMA1 include a logic-level input compatible with 3.3V and 5V microcontrollers, built-in overcurrent and overtemperature protection, reverse battery robustness, and ESD protection. The device integrates a charge pump to drive the N-channel MOSFET fully on, achieving low Rds(on) and minimal power dissipation. Diagnostic feedback through a status output enables fault monitoring by the host controller. Typical applications include PLC digital output modules, industrial sensor power rails, actuator drivers, and process control systems. The device is qualified for the harsh electrical environments typical of industrial 24V systems, including load dump and jump-start transients on 12V/24V automotive-style buses. When designing with this device, ensure the status pin pull-up is connected to a logic-level supply independent of the load supply to maintain fault visibility during overload events.
ISP752TFUMA1 - 1.3A Smart High-Side Switch 200mOhm 6-52V | Infineon
The Infineon ISP752TFUMA1 is a Smart High-Side Power Switch from the PROFETā¢ Industrial family, integrating a single N-channel power MOSFET with 200 mOhm on-resistance and a 1:1 channel ratio, housed in a PG-DSO-8-24 (DSO-8 with exposed pad) surface-mount package. It is rated for 1.3 A continuous load current and operates across a 6 V to 52 V supply range, with logic-level input on the IN pin. A High-Side Switch is a power distribution switch placed between the supply rail and the load, controlling current flow on the high (positive) side of the circuit. Compared with a low-side switch, the high-side topology keeps the load referenced to ground during fault conditions, improving short-circuit behavior and making it ideal for chassis-grounded industrial loads such as solenoids, valves, lamps, and relay coils. Within the system hierarchy, it belongs to power distribution switches -> load drivers -> power management ICs -> semiconductors. Key features of the ISP752TFUMA1 include integrated protective functions - overcurrent protection, short-circuit protection, overtemperature shutdown, overvoltage clamp (load-dump), and reverse-battery / reverse-voltage protection. According to the Infineon datasheet, the part also provides diagnostic feedback through a status flag pin, enabling fault detection in safety-critical applications. Typical quiescent current is in the microampere range, and the logic input is TTL/CMOS-compatible. The PG-DSO-8-24 package exposes the die pad for improved thermal dissipation, supporting continuous operation at 1.3 A with proper board layout. Architecturally, the device combines a vertical N-channel DMOS output stage with CMOS control logic and a charge pump that drives the gate above the supply rail. This single-chip integration is what gives the PROFET family its name (PROtected FET) and replaces discrete MOSFET-plus-fuse-plus-TVS designs with one part. Typical applications include 24 V industrial automation loads (PLCs, sensor actuators, solenoid valves), automotive body electronics (lamp drivers, motor drivers, relay replacement), process-control field I/O, and any 12 V/24 V/48 V load requiring eFuse-style protection. Designers favor this part for its high integration, small footprint, and the diagnostic output that supports functional-safety architectures. When designing with the ISP752TFUMA1, observe the input pin (IN) debounce requirements, place a 100 nF bypass capacitor close to Vbb, and ensure the exposed pad is soldered to a sufficient copper area for thermal relief. Inductive loads should use a free-wheeling diode or rely on the integrated clamp. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
ITS4035SEPDXUMA1 - 35mĪ© Smart High-Side Switch 13.2A | Infineon
The Infineon ITS4035SEPDXUMA1 is a 35 mĪ© single-channel smart high-side power switch in a PG-TSDSO-14 (exposed pad) package, designed for industrial PROFET applications. It delivers a continuous output current up to 13.2 A from a single N-channel MOSFET topology, with a programmable current limit range of 3 A to 13.2 A and an operating supply range of 5 V to 28 V. A smart high-side switch is a type of power distribution switch that sits between the system supply and the load, providing both load-driving capability and integrated protection features (overcurrent, overtemperature, short-circuit, ground-loss, and reverse-polarity protection). It belongs to the broader category of power management ICs, sitting hierarchically under power switches -> load drivers -> power distribution ICs -> semiconductor. Compared to discrete MOSFET designs, the smart high-side switch integrates diagnostic feedback, slew-rate control, and protection in a single die, simplifying PCB layout and reducing BOM. Key features include a typical R<sub>DS(ON)</sub> of 35 mĪ© at 25 Ā°C, an active-high logic-level enable input, open-drain status flag output, integrated thermal shutdown with auto-restart, and Infineon's PROFETā¢ protection suite including overvoltage clamp and current limitation. The PG-TSDSO-14 package features an exposed thermal pad (PG-EP) providing low thermal resistance for sustained high-current operation. The architecture uses an N-channel MOSFET configured as a high-side switch with charge-pump gate drive, supporting a wide logic-level input interface for direct connection to microcontrollers. Its 35 mĪ© on-resistance minimises conduction losses at full load, while the built-in current-limit and temperature monitoring ensure robust operation in fault conditions. Typical applications include industrial PLCs, factory automation loads, programmable logic controllers, solenoid and valve drivers, lighting relay replacements, and protected 24 V power distribution in building automation. The wide operating voltage range also makes it suitable for 12 V/24 V battery-driven systems in commercial vehicles and rugged industrial equipment. When designing with this device, ensure the input capacitor (typically 100 nF close to Vbb) and sufficient PCB copper area on the exposed pad are provided for thermal dissipation. The status output requires a pull-up resistor to logic high, and the enable logic must be observed during system power-up sequencing to avoid inrush glitches. This page synthesises distributor pricing, PROFET family variants, and practical design notes for the ITS4035S-EP family not found in the manufacturer datasheet alone.
ITS4040DEPDXUMA1 - 40mĪ© Dual Smart High-Side Switch | Infineon
The Infineon ITS4040DEPDXUMA1 is a 40 mĪ© dual-channel smart high-side power switch from the PROFETā¢ (Protected FET) family, providing two independent channels each capable of more than 2 A continuous load current, integrated protection functions, and digital diagnosis feedback. Housed in a PG-TSDSO-14 exposed-pad package, the device is designed for 24 V and 48 V automotive and industrial load driving applications with a wide operating voltage range of -0.3 V to 45 V (load-dump tolerant). Each channel is built around an N-channel vertical power MOSFET that supports 1:1 (high-side) switching topologies with a typical on-state resistance of 60 mĪ© at TJ = 125 Ā°C. A high-side switch (HSS) is a power-distribution switch placed between the supply rail and the load, allowing a low-voltage microcontroller to energize or de-energize a load such as a lamp, solenoid, valve, relay coil, or motor winding. The "smart" qualifier means protection, current sensing, and fault feedback are integrated on-die, eliminating discrete fuses, sense resistors, and gate drivers. PROFET devices fit the hierarchy: power MOSFET -> high-side switch -> smart power switch -> power management IC -> semiconductor. Key features include two independent 2.6 A-rated channels (4.1 A combined peak capability per datasheet summary), typical RDS(ON) of 60 mĪ© per channel at TJ = 125 Ā°C, integrated reverse-battery, over-voltage, over-current, over-temperature, and short-to-ground/short-to-battery protection, plus a current-sense diagnostic pin (IS) proportional to load current. The exposed-pad PG-TSDSO-14 package enables low thermal resistance and direct PCB heat spreading. A logic-level 3.3 V/5 V-compatible input interface allows direct GPIO control from microcontrollers. Typical applications include automotive body and chassis ECUs, 24 V truck and 48 V mild-hybrid loads, industrial PLC outputs, relay and valve drivers, LED lighting modules, and any 24 V/48 V system requiring protected, diagnosable high-side switching. The dual-channel architecture saves board space by replacing two discrete PROFET parts with a single IC while sharing the exposed pad for cooling. Design considerations include adequate copper area on the PCB to keep TJ below the thermal-shutdown threshold under worst-case load and ambient conditions, decoupling of the VCC logic supply near the IC, and protection against fast load-dump transients beyond the 45 V absolute maximum. Designers must also de-bounce the IS sense signal when used for PWM-driven loads to avoid false fault triggers. This page synthesizes distributor pricing as of 2026-09-14, parametric drop-in alternatives in the same PG-TSDSO-14 footprint, and practical PCB design guidance not found in a single manufacturer datasheet, providing information gain over DigiKey/Mouser catalog pages.
ITS4075QEPDXUMA1 - 75mĪ© Quad Smart High-Side Switch | Infineon
The Infineon ITS4075QEPDXUMA1 is a 75 mĪ© quad-channel smart high-side power switch in a PG-TSDSO-14 exposed-pad package, integrating four independent channels each capable of more than 2 A continuous load current with typical on-state resistance of 120 mĪ© at Tj = 125 Ā°C. Designed for industrial automation and automotive body electronics, it provides integrated protection functions (overcurrent, short-circuit, over-temperature, overvoltage, undervoltage lockout) plus a current-sensed diagnostic feedback pin per channel. The 4-channel integration minimizes PCB area versus discrete MOSFET solutions while simplifying the host MCU interface to a single analog/feedback rail. A smart high-side switch is a semiconductor relay built around one or more N-channel power MOSFETs that connect a load to the positive supply rail under logic-level control. Within the broader power management taxonomy, the ITS4075Q-EP-D belongs to the family of high-side switches (also called load switches or PROFETs), which sit between the load driver IC hierarchy and discrete MOSFETs. Infineon's PROFET+ family specifically targets harsh 24 V industrial and 12 V automotive environments with on-state resistance values in the 30 mĪ© to 200 mĪ© range, four protective functions plus diagnosis, and reverse-polarity support through external components. Key features include a wide 5 V to 45 V operating supply range, 2.6 A peak current capability, built-in charge pump for full N-channel drive, and per-channel current proportional sensing via the IS pin. The exposed-pad PG-TSDSO-14 package achieves RthJA values appropriate for 2 A continuous operation on standard JEDEC 1s0p test boards, and the 150 Ā°C maximum junction temperature allows high transient handling for inductive loads. Slew-rate control at each output reduces EMI on switch edges. Typical applications include industrial PLC digital outputs, 24 V solenoid and valve drivers, body control modules (BCM) for lighting and seat motors, and ground-isolated load multiplexing in process control. The PG-TSDSO-14 (TSSOP-14 with exposed pad) footprint is JEDEC-compatible with standard 14-pin SMD placement. When designing with this part, reserve headroom for the charge-pump supply and ensure the 150 Ī© GND resistor (for reverse-polarity operation) or reverse-current diode is sized correctly per datasheet guidance. Multi-channel synchronization requires careful ground layout to prevent cross-talk on the shared IS sense line.
ITS4080SEPDXUMA1 - 8A Smart High-Side Switch | Infineon PROFET
The Infineon ITS4080SEPDXUMA1 is a 1-channel smart high-side N-channel power switch from the PROFET Industrial family, rated for 8 A continuous load current with a typical on-state resistance of 80 mĪ© and housed in a PG-TSDSO-14 surface-mount package. The part integrates a vertical N-channel power MOSFET with CMOS control logic and offers comprehensive diagnostic and protection features including overcurrent, overtemperature, short-circuit, and overvoltage clamping, all within a single 14-pin device. A high-side power switch is a type of power distribution switch that connects a load to the positive supply rail and is controlled by a low-voltage logic-level signal from a microcontroller. It belongs to the broader category of power management ICs (PMICs) and, more specifically, the smart switch / load driver subcategory. Unlike a discrete MOSFET driven by a gate resistor network, a smart high-side switch such as ITS4080SEPDXUMA1 includes built-in charge pump, current sensing, status feedback, and fault protection, dramatically simplifying the BOM and improving system reliability in industrial automation, building control, and automotive body modules. Key features include 80 mĪ© typical RDS(on), a 45 V load-dump tolerant supply rating suitable for 24 V industrial buses, slew-rate controlled turn-on for reduced EMC emissions, a diagnostic feedback pin that reports open-load and overtemperature conditions, and a ground-loss tolerant logic interface. The integrated charge pump drives the internal N-channel MOSFET gate above the supply rail, achieving true low-loss switching without external bootstrap components. The device uses a vertical DMOS output stage combined with a bipolar-CMOS-DMOS (BCD) mixed-signal control block. A sense-FET inside the package mirrors load current into a current sense output pin (IS pin), enabling real-time load monitoring and short-circuit detection with a programmable threshold set by an external resistor. Typical applications include 24 V industrial PLC digital outputs, programmable logic controller (PLC) actuator drivers, solenoid and valve control, lighting relays, HVAC damper drivers, and replacement of electromechanical relays in body electronics modules. The 45 V rating comfortably covers the worst-case load-dump transient on a 24 V industrial bus. When designing with the ITS4080SEPDXUMA1, ensure the IS sense resistor is sized for the application-specific trip current, and use a TVS or reverse-battery protection diode on VBB to survive automotive-grade transients if used in vehicle applications. Note that this is the standard PROFET grade, not the AEC-Q100 qualified automotive grade. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing a single source of truth for engineers evaluating PROFET-based high-side switches.
ITS4100SSJNXUMA1 - 2A Smart High-Side Power Switch | Infineon
The Infineon ITS4100SSJNXUMA1 is a 2 A smart high-side power switch with an integrated N-channel vertical power MOSFET, housed in a PG-DSO-8 (exposed pad) package. Designed as a single-channel 1:1 power distribution switch, it delivers up to 2 A continuous load current with built-in overload, short-circuit, thermal shutdown (with auto-restart), overvoltage (including load dump), and reverse-battery protection. The device operates across a wide supply range typical of 12 V automotive systems and is part of Infineon's MINI-PROFET family. What is a high-side power switch? A high-side power switch is a semiconductor that sits between the load and the positive supply rail, controlling current flow using an N-channel MOSFET in a high-side configuration. It belongs to the broader category of Power Distribution Switches (PDSw) under Power Management ICs (PMIC). The MINI-PROFET family from Infineon integrates the FET, gate driver, and protection logic into one IC, replacing discrete MOSFET + driver + fuses + TVS solutions and reducing PCB area while improving diagnostic capability. Key features include a typical on-state resistance (RDS(on)) optimized for low conduction loss, current limitation with auto-retry, fast demagnetization of inductive loads (suitable for solenoids, relays, valves), and an analog/digital status feedback pin for fault reporting to the host microcontroller. The PG-DSO-8 exposed-pad package provides a low thermal resistance path, enabling sustained 2 A operation without external heatsinking in typical 12 V automotive loads. Architecturally, the ITS4100SSJNXUMA1 uses a vertical DMOS output structure co-packaged with CMOS control logic. The vertical FET topology minimizes specific on-resistance per unit area versus lateral MOSFETs, while the integrated charge pump generates the gate drive voltage required by the N-channel high-side configuration. Built-in thermal sensors cycle the output off and on (restart behavior) when junction temperature exceeds the shutdown threshold, preventing catastrophic failure during prolonged short-circuit events. Typical applications include automotive body electronics (door modules, seat control, lighting drivers), industrial 24 V PLC outputs, relay and solenoid replacement, heating elements, and any 12 V/24 V load requiring eFuse-style protection. The diagnostic output enables OBD-II-style fault reporting in automotive networks. When designing with this part, ensure the load's inrush current stays below the current-limit threshold or use the soft-start feature (if enabled by external configuration). The exposed pad must be soldered to a sufficient copper pour to achieve rated thermal performance; per JEDEC JESD51, a minimum 1 sq. inch of 1 oz copper on a 4-layer board is typical. This page synthesizes distributor pricing, drop-in alternative cross-references, and practical design notes that complement the official Infineon datasheet, offering information gain not available on any single distributor product page.
ITS4130QEPDXUMA1 - 650mA Quad Smart High-Side Switch | Infineon
The Infineon ITS4130QEPDXUMA1 is a 130 mĪ© quad-channel smart high-side power switch from Infineon's PROFETā¢ Industrial family, rated at 650 mA per channel, housed in a 14-pin PG-TSDSO-14 exposed-pad package. The device integrates four independent high-side switches with on-state resistance of 205 mĪ© typical at Tj=125Ā°C, supporting 45 V load-dump tolerance for harsh industrial and automotive 24V/48V environments. A high-side power switch is a semiconductor switch that sits between the supply rail and the load, controlling current flow from the high side of the load to ground. The quad-channel topology integrates four switches in a single IC, allowing independent control of multiple loads (relays, solenoids, lamps, LEDs) while sharing a common drain-to-source protection infrastructure. Compared with discrete MOSFETs and discrete fuses, a smart high-side switch adds integrated protection: over-current, over-temperature, over-voltage, reverse-polarity (with external components), and ground-loss detection, eliminating the BOM, PCB area, and design effort of discrete protection. Key features include a single supply operating range, per-channel diagnostic feedback, very low typical RDS(ON) of 205 mĪ© at Tj=125Ā°C, integrated protection functions, and reverse-polarity protection achievable with an external 150 Ī© power resistor between GND and ground. The PG-TSDSO-14 package provides an exposed thermal pad that lowers ĪøJA, enabling sustained quad-channel operation at 650 mA per channel without external heatsinking in typical industrial ambient conditions. The ITS4130QEPDXUMA1 uses an N-channel power MOSFET as the switching element, driven by a charge pump and control logic that handles gate rise/fall times, slew-rate limiting, and fault latching. The IC operates from a logic-level input and provides a status feedback pin, enabling the microcontroller to diagnose open-load, short-to-battery, short-to-ground, and over-temperature events in real time. Typical applications include industrial automation PLCs, process control distributed I/O modules, building automation relays, programmable logic controllers, HVAC actuators, and 24V sensor/actuator power distribution. The 45 V load-dump tolerance also makes it suitable for 24V truck, bus, and agricultural machinery electrical systems where transient voltages exceed nominal 24V. When designing with this device, ensure that the GND pin is correctly referenced because reverse-polarity protection requires an external 150 Ī© resistor or a reverse current diode plus 27 Ī© series resistor in the GND path. Use a 100 nF decoupling capacitor close to the Vbb supply pin and respect the maximum total simultaneous channel current to avoid tripping the thermal shutdown. This page synthesizes distributor pricing from DigiKey, LCSC and Octopart, drop-in alternatives within the PROFET family, and practical design notes not found in the manufacturer datasheet.
ITS4140NHUMA1 - 200mA High-Side Smart Switch | Infineon
The Infineon ITS4140NHUMA1 is a 200 mA high-side power switch with an integrated vertical N-channel power FET, housed in a 4-pin PG-SOT223-4 (3+Tab) surface-mount package. The device operates from 4.9 V to 60 V supply, supports a 1:1 input-to-output topology, and embeds short-circuit protection, current limitation, overload protection, overvoltage protection (including load dump), and negative-voltage output clamping for inductive loads. A high-side switch is a power-distribution IC that controls a load by switching the positive supply rail rather than ground return; this topology, also called a smart power switch or PROFET, sits in the PMIC (Power Management IC) hierarchy between discrete MOSFETs and fully-integrated system-basis chips. Compared with an electromechanical relay, a high-side switch provides silent, bounce-free switching, integrated diagnostics, and far faster fault response; compared with a discrete MOSFET plus fuse, it self-protects without external components. The ITS4140N integrates a charge pump that drives the internal N-channel FET, a precise current limit, thermal shutdown, and ground-loss detection. Diagnostic feedback is provided through the IN/status pin, simplifying wire harness troubleshooting. Switching inductive loads such as solenoids, relays, and small motors is handled with internal active clamping that absorbs the back-EMF without external freewheeling diodes, simplifying PCB layout. Designed for 12 V and 24 V industrial environments, the part withstands load-dump transients per ISO 7637-2 and is suitable for automotive and truck body electronics where the supply bus can swing well above nominal. Its 200 mA continuous current limit makes it ideal for driving small lamps, signal LEDs, sensors, and logic-level loads without external heatsinking. When designing with this device, observe maximum input voltage (60 V) under worst-case load-dump, derate current with ambient temperature above 25C, and place the input capacitor within 5 mm of the Vbb pin. The exposed tab is the power-dissipation path and must be soldered to a copper pour of at least 100 mm squared. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
ITS4141NHUMA1 - 700mA Smart High-Side Switch | Infineon PROFET
The Infineon ITS4141NHUMA1 is a 700 mA single-channel smart high-side power switch housed in a PG-SOT223-4 (TO-261-4) surface-mount package with integrated vertical N-channel power FET, embedded protection, and diagnostic feedback. It operates from a load supply range of -10 V to 48 V (extended to 12 V to 45 V in PROFET Industrial datasheet specification) with a typical on-state resistance of 200 mĪ©, and is intended for industrial automation, process control, and PLC digital output modules. What is a high-side power switch? A high-side power switch is a type of power distribution switch (sub-category: load driver) that sits between the positive supply rail and the load, controlling current flow by turning the integrated MOSFET on and off in response to a logic-level input. Within the broader taxonomy, the high-side switch belongs to: PMIC -> Power Distribution Switch -> Load Driver -> High-Side Switch. Infineon's PROFET family is the industry-leading implementation using a vertical N-channel FET for low R_DS(on) and high energy robustness. Key features include short-circuit protection with current limitation, overload protection, overvoltage protection including load-dump, undervoltage shutdown with auto-restart and hysteresis, plus an open-drain status diagnostic pin. The 200 mĪ© R_DS(on) at 25 Ā°C minimizes conduction losses, while the integrated charge pump drives the gate of the N-channel FET for true high-side switching with a standard 3.3 V or 5 V CMOS logic input. PG-SOT223-4 provides a low thermal resistance path via the central tab, enabling continuous 700 mA operation without external heatsinking. The architecture is built on Infineon's Smart Power technology - a vertical DMOS output stage with monolithic CMOS control logic. The diagnostic pin reports open-load, overtemperature, and overcurrent events back to the microcontroller, while the auto-restart behavior allows the part to recover automatically once a fault clears, reducing firmware complexity in PLC and process-control applications. Typical applications include 24 V industrial PLC digital outputs, factory-automation I/O modules, sensor and actuator power distribution, building-automation relay drivers, and battery-protected low-side-of-24V systems. The wide V_S range with load-dump tolerance makes it especially suited for 24 V truck and bus body-controller applications. When designing with this part, respect the 700 mA continuous current limit and place the tab solder pad on at least 1 cmĀ² of copper pour to keep R_thJA low enough for the SOA. The status pin requires a pull-up resistor and is open-drain; ensure input transitions are below 5 V CMOS thresholds for noise-immune switching. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
ITS4142NHUMA1 - 1.4A Smart High-Side Switch SOT-223 | Infineon
The Infineon ITS4142NHUMA1 is a single-channel smart high-side power switch with an integrated vertical N-channel power FET, housed in a 4-pin SOT-223 (PG-SOT223-4) surface-mount package. It delivers up to 1.4 A continuous load current and replaces electromechanical relays and discrete switching circuits with a robust solid-state solution that includes embedded protection and diagnostic functions. What is a high-side power switch? A high-side power switch is a semiconductor device placed between the positive supply rail and the load. By switching on the high side, the load is referenced to ground when off, eliminating ground loops and improving safety in industrial automation. High-side switches belong to the broader category of power distribution switches within power management ICs. Compared to low-side switches or electromechanical relays, smart high-side switches provide on-resistance control, fault feedback, and protection features in a single monolithic IC. The ITS4142N integrates short-circuit protection with current limitation, overload protection, overvoltage protection including load-dump transients, undervoltage shutdown with auto-restart and hysteresis, and inductive-load switching capability. These features enable it to drive resistive, inductive, and capacitive loads in harsh 12 V and 24 V automotive and industrial environments. The logic-level input is compatible with 3.3 V and 5 V microcontrollers, simplifying digital control. Architecturally, the device uses Infineon's SIPMOS vertical power MOSFET technology, which minimizes on-state conduction losses versus lateral MOSFETs. The integrated charge pump drives the gate of the N-channel FET to provide a true low-resistance path from supply to load. An onboard thermal shutdown circuit protects the die during overload events, while open-drain diagnostic feedback signals fault conditions to the host microcontroller. Typical applications include 24 V industrial PLC outputs, automotive body-control modules, relay replacement in HVAC and lighting systems, programmable logic controller digital outputs, and solenoid or valve drivers. With its wide operating voltage range and embedded protection, the ITS4142N is well suited for IEC 61131-2 compliant industrial digital outputs. When designing with this part, ensure that input debouncing and proper TVS protection are applied to the load lines for long-term reliability, and verify junction temperature under worst-case continuous load. A key design trade-off is RDS(on) versus quiescent current; the ITS4142N favors low on-resistance for minimal load-side dissipation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, supporting both new designs and relay-replacement retrofits.
ITS41K0SMENHUMA1 - 1Ī© 60V 200mA Smart High-Side Switch | Infineon
The Infineon ITS41K0SMENHUMA1 (ITS41K0S-ME-N) is a 200 mA smart high-side N-channel power switch housed in a PG-SOT223-4 surface-mount package. It integrates a 1 Ī© typical on-state MOSFET channel with full protection features for industrial load driving. The device operates from 4.9 V to 60 V supply rails and is part of the PROFET Industrial MINI-PROFET family. A high-side power switch (also called a load switch or smart switch) is a semiconductor device that controls power delivery to a downstream load by switching the positive supply rail. Compared with a discrete MOSFET plus fuse arrangement, a smart high-side switch integrates the switching transistor, gate driver, current limit, thermal protection, ESD protection, and diagnostic feedback into one IC. This integration reduces PCB area, eliminates external fuses, and provides fault reporting to the host microcontroller. The ITS41K0S family belongs to the broader Infineon PROFET (Protected MOSFET) product hierarchy used in industrial, home appliance, and building automation systems. Key features include a 60 V maximum load-dump tolerant supply rating, 800 mĪ© maximum on-resistance (R_DS(on)), and 200 mA continuous load current capability. Built-in protection includes thermal shutdown with auto-restart, overcurrent protection with current limiting, overvoltage clamp (active clamp against automotive load-dump transients), ESD protection on the IN/DEN pins, and reverse-battery robustness with ground-loss tolerance. The PG-SOT223-4 package provides a thermal pad for PCB heat spreading and supports up to approximately 1 W dissipation with proper layout. Technically, the ITS41K0SMENHUMA1 uses an N-channel vertical power MOSFET with a charge pump to drive the gate above the supply rail, allowing true low-R_DS(on) high-side switching. A status feedback pin provides diagnostic information to the microcontroller. The device is qualified for industrial environments, supporting -40Ā°C to +125Ā°C junction operation. Typical applications include industrial PLC digital outputs, relay and solenoid replacement, building automation controls, home appliance driver stages (washing machines, dishwashers, white goods), and small motor or valve drivers. The 60 V rating makes it well suited for 24 V industrial bus systems with significant transient margin. When designing with this part, ensure the input capacitor (typically 100 nF close to the Vbb pin) and output capacitor are sized according to the application load profile. The exposed pad must be soldered to a copper pour of at least 1 cmĀ² to keep junction temperature within safe limits at sustained loads. The diagnostic output requires proper pull-up configuration per the datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers select and source the ITS41K0SMENHUMA1 with confidence.
ITS4200SMENHUMA1 - 700mA 41V Smart High-Side Switch | Infineon
The Infineon ITS4200SMENHUMA1 is a protected single-channel Smart High-Side NMOS Power Switch in a SOT-223-4 (PG-SOT223-4) package with charge pump and CMOS-compatible input, monolithically integrated in Infineon Smart technology (PROFETā¢ Industrial family). The device delivers up to 0.7 A continuous load current, 41 V overvoltage protection (including load-dump), and embedded thermal shutdown, short-circuit protection with current limitation, and undervoltage shutdown. The logic-level CMOS input enables direct MCU GPIO control without level shifters. A high-side power switch (also called a smart high-side driver) is a power distribution IC that sits between a positive supply rail and a load, providing controlled turn-on, protection, and diagnostic feedback. Unlike a low-side switch (which switches the load to ground), a high-side switch returns load current directly to ground when the FET is on, eliminating ground-shift noise and offering short-to-ground protection by default. The high-side switch family sits inside the broader taxonomy: power switch IC -> power management IC -> semiconductor device. Related Infineon families include PROFETā¢, HITFETā¢, and SPOCā¢ for various current ranges. Key features include 0.7 A nominal load current, 41 V load-dump overvoltage protection, embedded thermal shutdown with restart, short-circuit current limitation, open-load detection in OFF state, and very low quiescent current (microamp range) for always-on applications. The CMOS-compatible input pin provides a clean logic interface with pull-down current. The monolithic Smart technology integration puts the vertical power FET, charge pump, and protection logic on a single die. The ITS4200S-ME-N variant (its full part designation behind the SP-number ITS4200SMENHUMA1) is targeted at industrial-grade applications requiring robust protection. The internal charge pump drives the gate of the N-channel MOSFET above the supply rail so the device behaves as an ideal high-side switch. Diagnostic feedback via the status pin supports advanced fault handling. According to the manufacturer datasheet, the part is not qualified for automotive use per Infineon policy. Typical applications include industrial PLC digital outputs, building automation relay replacement, USB downstream power switching, sensor and actuator power distribution, and small DC load control in 12 V and 24 V industrial systems. The wide operating voltage range (5 V to 41 V) covers 12 V and 24 V nominal buses including load-dump transients. When designing with this part, ensure the load current stays below 0.7 A nominal (1 A peak) and respect the SOT-223-4 thermal resistance (around 70 C/W on a standard 2-layer 1 oz PCB) by adding a copper pour under the tab. The status pin needs a pull-up resistor if diagnostics are required; leave it floating otherwise to minimize quiescent current. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
ITS4200SMEOHUMA1 - 700mA Smart High-Side Switch | Infineon
The Infineon ITS4200SMEOHUMA1 is a 700 mA smart high-side N-channel MOSFET power switch housed in a 4-pin PG-SOT223-4 (3 leads + tab) surface-mount package, monolithically integrated in Infineon's SMART technology. It delivers a typical on-state resistance of 150 mOhm, supports nominal operating voltages up to 45 V with load-dump protection, and provides an embedded CMOS-compatible input pin with internal charge pump for true logic-level gate drive. A smart high-side switch (also called a high-side driver, smart power switch, or PROFET) is a power-distribution IC that sits between an upstream supply and a downstream load, replacing a discrete MOSFET plus discrete protection circuitry. It belongs to the broader power-management category: high-side switch -> power distribution switch -> power management IC -> semiconductor. By placing the switch on the high side of the load, the device allows loads (such as lamps, solenoids, relays, or resistive heaters) to share a common ground return, simplifying PCB routing and improving system safety because fault currents flow back through the chassis ground. Key features include fixed current limiting, overtemperature shutdown with auto-restart, short-circuit protection with shutdown, overvoltage protection including load dump, ground-loss protection, and ESD protection on the input pin and the load output. The CMOS-compatible input is current-controlled, allowing direct drive from a microcontroller GPIO without level shifting. Reverse-battery protection is achieved through the body diode of the internal power MOSFET in conjunction with an external resistor. The architecture combines a vertical power DMOS output stage, a charge pump to generate the gate-drive voltage above the supply rail, and analog protection blocks for current sense, thermal sense, and voltage monitoring. This monolithic integration is what differentiates ITS-class parts from discrete FET-plus-driver solutions: it eliminates layout-induced parasitic inductance issues and provides guaranteed, tested protection thresholds rather than discrete-component tolerances. Typical applications include PLC digital outputs, sensor and actuator power distribution in industrial automation, body-control modules in automotive systems, LED driver switching, relay and solenoid drivers, and general 24 V industrial bus switching. Its 700 mA continuous current limit and 45 V transient rating make it especially suited to 24 V PLC and truck/bus 24 V systems where load-dump transients up to 45 V must be tolerated without damage. When designing with this device, place a reverse-polarity protection diode or P-MOSFET at the supply input to handle full-load reverse-battery events, and ensure adequate copper area on the tab (pin 4) for thermal dissipation. The current-controlled input means a single series resistor sets both the input current and the logic threshold; do not drive the input with a hard voltage source without this resistor. This page synthesizes distributor pricing, drop-in alternatives from authorized sources, and practical design notes not found in the manufacturer datasheet alone.
ITS4200SMEPHUMA1 - 1.4A Smart High-Side Power Switch | Infineon
The Infineon ITS4200SMEPHUMA1 is a single-channel Smart High-Side N-Channel MOSFET power switch in a 4-pin PG-SOT223-4 package, providing 1.4A continuous load current capability with embedded protection and diagnostic functions. The device operates across a -3V to 45V supply range and integrates a vertical power FET monolithically fabricated in Infineon's Smart Power technology, with a charge pump and CMOS-compatible input. A high-side power switch is a type of power distribution switch (also called a load switch or eFuse) that sits between the supply rail and the load, providing controlled turn-on/turn-off, inrush current limiting, and comprehensive fault protection. Smart high-side switches belong to the broader family of power management ICs (PMICs) and are increasingly replacing discrete fuses, MOSFETs, and relays in 12V/24V automotive and industrial applications. The ITS4200S-ME-P is part of the MINI-PROFET family from Infineon, optimized for high-current drive capability in compact SOT-223-4 footprints. Key features of this part include a typical on-state resistance of 150 milliohms (Rdson), current-controlled input, current limitation, short circuit protection, shutdown under undervoltage, overvoltage protection including load-dump resilience, thermal shutdown with auto-restart, and the ability to switch inductive loads. The CMOS-compatible logic input makes it directly compatible with 3.3V and 5V microcontrollers without level shifting, simplifying GPIO interface design. Architecturally, the device integrates a vertical N-channel DMOS output stage, charge pump for gate drive generation, current sense amplifier, and a state machine for protection logic. This monolithic integration delivers a clean CMOS logic interface while maintaining the robustness required for harsh electrical environments, replacing traditional electromechanical relays with a solid-state, surface-mountable alternative. Typical applications include automotive body electronics (lighting, seat control, mirror heating), industrial automation (PLC outputs, solenoid drivers), and any 12V/24V bus system requiring high-side switching. The AEC-Q100 qualification makes the part suitable for under-hood and passenger-compartment automotive environments. When designing with this device, ensure adequate PCB copper area on the tab/heat-sink pad to dissipate I^2R losses. The ITS4200SMEPHUMA1 includes built-in protection, but designers should still validate fault-recovery behavior in their specific load profile. This page synthesizes distributor pricing, drop-in alternatives from the same Infineon MINI-PROFET family, and practical design notes not found on the manufacturer datasheet alone.
ITS4200SSJDXUMA1 - 1.2A Smart High-Side Switch | Infineon PROFET
The Infineon ITS4200SSJDXUMA1 is a 200 mOhm single-channel smart high-side power switch built on Infineon's PROFET (Protected MOSFET) platform, housed in a PG-DSO-8 package. It delivers 1.2 A continuous load current with 6 V to 52 V operating supply range, integrating a vertical N-channel power MOSFET with comprehensive embedded protection and diagnostic functions for industrial and automotive 24 V loads. A smart high-side switch is a power distribution switch that sits between the supply rail and the load, providing controlled turn-on/turn-off, current limiting, and fault feedback. Within the broader taxonomy, this part belongs to the PROFET family -> intelligent power switch (IPS) -> high-side driver -> load driver -> power management IC. Compared to a discrete MOSFET plus fuse, the ITS4200SSJDXUMA1 eliminates external protection components, simplifies PCB layout, and provides real-time status feedback to the microcontroller. Key specifications include 200 mOhm typical on-state resistance (R_DS(on)), 1.2 A continuous drain current, 6 V to 52 V supply range, and 0.8 mA quiescent supply current. The device features overload protection, current limitation, short-circuit protection with thermal shutdown and auto-restart, overvoltage protection including load-dump transient tolerance, undervoltage shutdown, and fast demagnetization of inductive loads. A diagnostic status output flags open-load and overtemperature conditions back to the host MCU. The ITS4200SSJDXUMA1 uses Infineon's vertical DMOS process for low R_DS(on) per area and integrates charge pump, gate driver, sense-FET, and protection logic on a single die. The 8-pin DSO footprint exposes IN, OUT, GND, Vbb, and a single status pin, simplifying PCB routing versus multi-channel PROFET alternatives. Maximum power dissipation is 1400 mW. Typical applications include 24 V industrial relay and solenoid drivers, PLC digital outputs, automotive body electronics (lighting, door modules, seat controllers), and resistive/inductive load management. The 52 V load-dump tolerance makes it directly compatible with 12 V and 24 V automotive buses. When designing with the ITS4200SSJDXUMA1, place a 100 nF ceramic bypass capacitor close to Vbb and verify heatsinking for continuous 1.2 A loads above 25 C ambient. Use the status pin to flag fault conditions to the host MCU rather than relying on software polling of the output voltage. This page synthesizes Infineon distributor pricing, PROFET family drop-in alternatives (ITS4100SSJNXUMA1, BTS462TATMA1), and practical design guidance for 24 V load switching that the manufacturer datasheet alone does not consolidate.
ITS428L2ATMA1 - 5.8A Smart High-Side Power Switch | Infineon
The Infineon ITS428L2ATMA1 is a 5.8A single-channel smart high-side power switch in a PG-TO252-5-11 (TO-252-5 / DPAK-4 leads + tab) surface-mount package. It monolithically integrates a vertical N-channel power MOSFET with a charge pump, ground-referenced CMOS-compatible input, and diagnostic feedback, and is fabricated using Infineon's Smart SIPMOS technology. The part targets 5 V, 12 V, and 24 V DC grounded industrial loads and is part of the PROFET Industrial family. A high-side switch is a power-distribution topology in which the load is tied to ground and the switch sits between the positive supply rail and the load. Compared with low-side switching, high-side architecture eliminates a permanent ground path, simplifies fault detection, and protects downstream wiring from shorts to ground. Smart high-side switches add on-chip protection (overload, short-circuit, overvoltage/load-dump, overtemperature) and a status/diagnostic output that the microcontroller can read for fault handling. Key features of the ITS428L2ATMA1 include a typical on-resistance in the low milli-ohm range for low conduction loss, a continuous load current capability up to approximately 5.8 A, CMOS-compatible logic input for direct 3.3 V or 5 V micro-controller drive, integrated overvoltage protection including load dump via an external resistor, and a diagnostic feedback pin for open-load, short-to-ground, short-to-battery, and overtemperature reporting. The PROFET family is engineered to handle high inrush currents typical of lamps, solenoids, motors, and capacitive loads. Typical applications include industrial 24 V PLC digital outputs, relay and solenoid replacement, automotive body and chassis modules (12 V), building automation, and any general resistive, inductive, or capacitive 5 V - 24 V load. When designing with this part, ensure the supply voltage stays within the supported range, add the recommended external resistor for overvoltage/load-dump clamping, and observe thermal limits at maximum continuous current. The TO-252-5 package requires sufficient copper pad area for heat dissipation. This page aggregates distributor pricing, drop-in PROFET family alternatives, and practical design notes beyond the manufacturer datasheet.
ITS42K5DLDFXUMA1 - Dual 250mA PROFET High-Side Switch | Infineon
The Infineon ITS42K5DLDFXUMA1 is a dual-channel high-side power switch from the PROFET (Protected MOSFET) 24V/48V family, delivering two independent 250 mA channels in a compact 10-pin PG-TSON-10-2 (TSON EP) exposed-pad package. Each channel integrates a P-channel power MOSFET with on-state resistance of 2.5 ohm and a built-in freewheeling diode, providing clamped inductive-load switching up to 13.5 V supply operation. A PROFET high-side switch is a smart power switch that combines a MOSFET output stage, gate driver, and comprehensive protection circuitry in one IC. It belongs to the power distribution switch category within the broader power management IC (PMIC) hierarchy, sitting between discrete MOSFETs (which need external drivers and protection) and fully-integrated system basis chips (which add CAN/LIN transceivers). PROFET switches are commonly used in automotive body and powertrain modules where they replace discrete relays with PCB-mountable, diagnostically-rich equivalents. Key features include dual 250 mA continuous current per channel, 2.5 ohm Rds(on) typical, integrated freewheeling diode per output, status feedback, and protection functions (overload, short-circuit, thermal shutdown, overvoltage clamp). The 1:1 input-to-output switch topology provides simple logic-level control from a microcontroller GPIO. Operating voltage range supports both 12 V and 24 V automotive buses with reverse-battery robustness. Architecturally, each channel uses a vertical P-channel DMOS output transistor driven by a charge-pump-derived gate drive, with current-sensing and temperature-sensing blocks feeding back into a fault-management state machine. The exposed thermal pad on the bottom of the TSON-10-2 package provides a low thermal-resistance path (~30 C/W typical) to the PCB copper, enabling sustained operation at the rated current without external heatsinking. Typical applications include automotive body control modules (BCM), HVAC actuators, LED lighting drivers, sensor power distribution, and industrial 24V PLC outputs. The dual-channel design is particularly efficient for paired loads such as bidirectional motors or two indicator lamps sharing one IC. When designing with this part, place the exposed pad on a copper pour of at least 1 square centimeter to keep junction temperature within rating at full load. The status pin requires a pull-up resistor; consult the datasheet for diagnostic truth-table behavior in fault conditions. This page synthesizes Infineon datasheet parameters, distributor pricing, drop-in alternatives, and practical design notes not found on a single distributor product page, giving engineers a one-stop reference for evaluation and BOM decisions.