1EDN6550BXTSA1 vs 1ED3124MU12HXUMA1 Perbandingan

Perbandingan bersamaan detil 1EDN6550BXTSA1 dari Infineon dan 1ED3124MU12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDN6550BXTSA1 1ED3124MU12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Single-channel gate driver IC Single-channel isolated gate driver IC
Driver Configuration High-Side / Low-Side, Non-Inverting —
Jumlah Output 1 —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Minimum Pulse Width 29 ns —
Input Type Differential (TTL-compatible) —
Supply Voltage Range [DATA_NEEDED: VCC range] —
UVLO Protection Yes (integrated) —
Suhu Kerja -40C to +125C —
Paket PG-SOT23-6-3 (SOT-23-6) PG-DSO-8-66 (DSO-8 wide-body)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL level] MSL2 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Jumlah Pin 6 —
Manufacturer Family — EiceDRIVER Compact 1ED31xxMU12H (X3 compact)
Peak Output Current (source/sink) — 14 A typical
Konfigurasi Output — Separate source and sink pins
Galvanic Isolation (rms) — 5.7 kV (UL 1577)
Working Voltage (continuous) — 1200 V
Common-Mode Transient Immunity (CMTI) — 200 kV/us minimum
Propagation Delay (typ.) — 90 ns
UVLO Threshold — 10.5 V
Isolation Technology — Coreless transformer (CT)
Creepage Distance — >8 mm
Rentang Suhu Kerja — -40C to +125C
Target Switch Types — IGBT, power MOSFET, SiC MOSFET
Recommended Switch Class — Up to 2300 V IGBT / SiC modules

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