1EDN6550BXTSA1 vs 1ED3124MU12HXUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN6550BXTSA1 disebabkan oleh Infineon dan 1ED3124MU12HXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3124MU12HXUMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | 1EDN6550BXTSA1 | 1ED3124MU12HXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Product Type | Single-channel gate driver IC | Single-channel isolated gate driver IC |
| Driver Configuration | High-Side / Low-Side, Non-Inverting | — |
| Bilangan Output | 1 | — |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 8 A | — |
| Minimum Pulse Width | 29 ns | — |
| Input Type | Differential (TTL-compatible) | — |
| Supply Voltage Range | [DATA_NEEDED: VCC range] | — |
| UVLO Protection | Yes (integrated) | — |
| Suhu Operasi | -40C to +125C | — |
| Kemasan | PG-SOT23-6-3 (SOT-23-6) | PG-DSO-8-66 (DSO-8 wide-body) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | [DATA_NEEDED: MSL level] | MSL2 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Kiraan Pin | 6 | — |
| Manufacturer Family | — | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) |
| Peak Output Current (source/sink) | — | 14 A typical |
| Konfigurasi Output | — | Separate source and sink pins |
| Galvanic Isolation (rms) | — | 5.7 kV (UL 1577) |
| Working Voltage (continuous) | — | 1200 V |
| Common-Mode Transient Immunity (CMTI) | — | 200 kV/us minimum |
| Propagation Delay (typ.) | — | 90 ns |
| UVLO Threshold | — | 10.5 V |
| Isolation Technology | — | Coreless transformer (CT) |
| Creepage Distance | — | >8 mm |
| Gambaran Suhu Operasi | — | -40C to +125C |
| Target Switch Types | — | IGBT, power MOSFET, SiC MOSFET |
| Recommended Switch Class | — | Up to 2300 V IGBT / SiC modules |