1EDI20N12AFXUMA1 - 1200V Isolated Gate Driver, 4A/3.5A | Infineon
MPN: 1EDI20N12AFXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.1 | $210.00 |
| 500 | $1.78 | $890.00 |
| 1,000 | $1.45 | $1,450.00 |
Drop-in alternatives for 1EDI20N12AFXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
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View Datasheet →2ED21834S06JXUMA1
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View Datasheet →1EDI20N12AFXUMA1 Maximum Ratings & Electrical Characteristics
| Driver Configuration | Single high-side, isolated |
| Isolation Type | Galvanic (coreless transformer), reinforced |
| Number of Channels | 1 |
| Maximum Supply Voltage (Output Side) | 17 V |
| Minimum Supply Voltage (Output Side) | 3.1 V |
| Peak Source Current | 4.0 A (typical) |
| Peak Sink Current | 3.5 A (typical) |
| Working Voltage (Isolation) | 1200 V (high-side rail reference) |
| Propagation Delay | 120 ns (typical) |
| Output Configuration | Separate source and sink pins |
| Short-Circuit Clamping | Yes (built-in) |
| Package | PG-DSO-8-51 (DSO-8, 8-pin, narrow body) |
| Operating Temperature Range | -40 °C to +125 °C |
| Mounting Type | Surface Mount |
| MSL Level | 2 (per JEDEC J-STD-020) |
| RoHS Compliance | Compliant |
| Lead-Free | Yes |
1EDI20N12AFXUMA1 Pin Configuration
| Pin 1 | VCC1 — Input-side supply voltage (3.3 V or 5 V logic domain) |
| Pin 2 | GND1 — Input-side ground (logic domain) |
| Pin 3 | IN+ — Non-inverting PWM input from controller |
| Pin 4 | IN- — Inverting PWM input (tie to IN+ if unused for single-ended drive) |
| Pin 5 | GND2 — Output-side ground (high-side reference) |
| Pin 6 | SINK — Gate pull-down output (3.5 A peak) |
| Pin 7 | SOURCE — Gate pull-up output (4.0 A peak) |
| Pin 8 | VCC2 — Output-side supply voltage (3.1 V to 17 V) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1EDI20N12AFXUMA1 is suitable for 6 applications: Industrial Motor Drives (3-Phase Inverter), Solar String and Central Inverters, EV Charging Infrastructure, Uninterruptible Power Supplies (UPS), Industrial Welding Power Supplies, Induction Heating and Resonant Converters.
Industrial Motor Drives (3-Phase Inverter)
The 1EDI20N12AFXUMA1 is well-matched to industrial motor drive inverters because its 1200 V working voltage comfortably covers 400 V and 690 V AC bus designs with 30-50 % margin. The 4 A source / 3.5 A sink drive strength easily switches high-Qg 1200 V IGBT modules used in 5-50 kW drives, while the separate source and sink pins allow gate-resistor optimization to balance switching loss and EMI. The internal galvanic isolation eliminates the bootstrap supply on the high-side, reducing BOM count and improving reliability under prolonged 100 % duty-cycle braking conditions. Typical placements are one driver per IGBT switch in three-phase bridge topologies (six drivers per drive), or two drivers per half-bridge module.
Recommended
Solar String and Central Inverters
In solar inverters operating from 600 V to 1500 V DC bus, the 1EDI20N12AFXUMA1 provides the high-side floating gate drive for boost, full-bridge, and HERIC topologies. The reinforced isolation per IEC 60747-17 supports the safety path required by IEC 62109 for PV equipment, and the high CMTI of the coreless-transformer barrier rejects the fast dV/dt from SiC MOSFET switching nodes. With 4 A peak source current, the driver can charge the gate of high-current 1200 V SiC MOSFETs within tens of nanoseconds, minimizing switching losses in 50-250 kW string inverters. The 120 ns typical propagation delay is consistent across the part-to-part range, enabling precise dead-time control between complementary switches.
Recommended
EV Charging Infrastructure
The 1EDI20N12AFXUMA1 is widely used as the isolated gate driver for the high-side IGBTs in 3-phase PFC and LLC converters inside 11 kW to 50 kW EV charging modules. Its 1200 V rating handles 800 V battery stacks with margin, and the 4 A/3.5 A peak drive currents directly drive IGBT modules from Infineon, Fuji, or Mitsubishi without external buffer stages. Reinforced galvanic isolation simplifies the safety path under IEC 61851-1 and UL 2202. The driver is also used in DC fast charger stacks where paralleled IGBTs require matched propagation delays; the part-to-part timing skew of the 1EDI20N12AF family is tight enough to ensure balanced current sharing without additional synchronization circuitry.
Recommended
Uninterruptible Power Supplies (UPS)
In online UPS systems rated from 1 kVA to 100 kVA, the 1EDI20N12AFXUMA1 drives the IGBTs in the rectifier and inverter stages with reinforced isolation between the DSP control board and the high-voltage DC bus. The 4 A source / 3.5 A sink drive strength allows switching at 20-50 kHz without external buffers, supporting the high efficiency required for ECO-mode UPS designs. Built-in short-circuit clamping protects the IGBTs during overload events, which is critical for transformer-coupled UPS outputs that experience inrush currents. The PG-DSO-8-51 narrow-body package fits the dense PCB layouts typical of modular UPS power stages.
Recommended
Industrial Welding Power Supplies
Welding inverters operating at 20-100 kHz from a rectified 400-690 V bus use the 1EDI20N12AFXUMA1 to drive the IGBTs in the primary-side full bridge or half bridge. The 4 A source / 3.5 A sink current capability supports the high gate-charge IGBTs typically selected for arc-stability and high peak current handling. Reinforced galvanic isolation is required between the operator-side control (often with touch-panel MCU) and the high-voltage DC bus, and the part's IEC 60747-17 rating meets this need. Short-circuit clamping is essential during arc strike events, where the IGBT must survive momentary desaturation without false triggering.
Recommended
Induction Heating and Resonant Converters
The 1EDI20N12AFXUMA1 is well-suited to induction heating inverters and LLC resonant converters where 1200 V switches operate at 30-300 kHz. The 120 ns propagation delay is symmetric between turn-on and turn-off, ensuring accurate dead-time insertion critical for ZVS operation. The separate source and sink pins let designers tune the gate drive asymmetry to control the resonant tank behaviour and reduce circulating currents. The high CMTI from the coreless-transformer isolation rejects the high dV/dt that occurs at the resonant tank's switching node, avoiding false triggering and maintaining efficiency above 95 % in domestic induction cooktops and industrial RF heating systems.
Recommended
Recommended Products Summary
Engineering reference data for 1EDI20N12AFXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDI20I12AF | 1EDI20H12AF | 1EDB8275FXUMA1 | 2ED21834S06JXUMA1 | 2ED2183S06FXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-8-51 (DSO-8 narrow body) | PG-DSO-8-51 - same | PG-DSO-8-51 - same | PG-DSO-8-51 - same | PG-DSO-8-51 - same | PG-DSO-8-51 - same |
| Isolation Type | Galvanic, coreless transformer (reinforced) | Galvanic, coreless transformer (reinforced) | Galvanic, coreless transformer (reinforced) | Galvanic, coreless transformer (basic) | Galvanic, coreless transformer (reinforced) | Galvanic, coreless transformer (reinforced) |
| Working Voltage | 1200 V (high-side reference) | 1200 V | 1200 V | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Peak Source Current | 4.0 A | 4.0 A | 4.0 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Peak Sink Current | 3.5 A | 3.5 A | 3.5 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Propagation Delay (typ.) | 120 ns | 120 ns | 120 ns | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Output Configuration | Separate source and sink pins | Separate source and sink pins | Separate source and sink pins | Separate source and sink pins | Separate source and sink pins | Separate source and sink pins |
| Short-Circuit Clamping | Yes | Yes | Yes | Yes | Yes | Yes |
| Unit Price (qty 1000) | ~$1.45 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Industry-leading 4 A source / 3.5 A sink in narrow-body DSO-8 (vs 1EDB8275FXUMA1)
- 1200 V reinforced isolation per IEC 60747-17 (vs 1EDI20I12AF)
- Coreless transformer isolation - no LED aging (vs Generic optocoupler-based gate driver (e.g. TLP350))
Design Notes
Place a 1 µF X7R (or X7S) ceramic bypass capacitor directly on the VCC2 pin (pin 8), within 5 mm of the package, plus a 100 nF parallel cap for high-frequency noise suppression. Use a wide, short return path to GND2 (pin 5) - the source/sink return currents can reach 4 A peak with sub-10 ns rise times, and any loop inductance (>5 nH) will cause ringing that may exceed the absolute maximum VCC2 rating. The exposed pad should be soldered to a GND2 copper pour (1 oz minimum, 2 oz preferred) to reduce thermal resistance below the rated 100 K/W.
Estimated thermal dissipation: with 4 A peak source current at 1 MHz into a 10 nC gate charge, the gate-drive power is approximately 0.2 W (P = Qg x Vgs x fsw). At 100 kHz this drops to 20 mW. The PG-DSO-8-51 has a typical theta_JA of ~100 K/W on a standard 4-layer JEDEC test board, so even 0.2 W results in a 20 K rise above ambient - acceptable within the -40 to +125 °C industrial range. For high-frequency SiC MOSFET designs where fsw exceeds 500 kHz, derate the maximum ambient temperature or use additional PCB copper area around the exposed pad to keep the junction below 150 °C.
Do not connect the SOURCE and SINK pins together externally - the separate pins are intentionally provided for independent gate-charge profiling. Tying them together forces the same gate resistor for turn-on and turn-off, which increases switching losses and EMI. Also, do not parallel multiple 1EDI20N12AF outputs to share drive current: the internal output stages are not designed for paralleling and current sharing will be uneven. Finally, ensure the input-side decoupling (VCC1) is independent from the output-side decoupling (VCC2); a common ferrite bead between the two is acceptable but shared ground impedance will inject switching noise into the logic domain.
Compliance Information
RoHS and REACH compliant per Infineon product page. Industrial grade - not AEC-Q100 qualified (automotive versions available separately in the 1EDI20xx family). Lead-free (Sn-based) reflow profile per JEDEC J-STD-020 MSL-2.
