2ED21834S06JXUMA1 vs 2ED2108S06FXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED21834S06JXUMA1 disebabkan oleh Infineon dan 2ED2108S06FXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2ED21834S06JXUMA1 2ED2108S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Configuration Half-bridge (high-side + low-side) —
Maximum Offset Voltage (VBS) 650 V —
Typical Sink Current 2.5 A —
Typical Source Current 2.5 A —
Input Logic Non-Inverting —
Integrated Bootstrap Diode Yes Yes
Technology SOI (Silicon-On-Insulator) high-voltage —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Kemasan PG-DSO-14-49 (DSO-14) PG-DSO-8-53 (DSO-8)
Bilangan Pin 14 —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -40 °C to +125 °C —
Status RoHS Compliant Compliant
Standard Reel Quantity 3000 —
Driver Configuration — Half-Bridge
Number of Drivers — 1
Gate Type — N-Channel MOSFET, IGBT
Bilangan Output — 2 (high-side + low-side)
Logic Input — Non-Inverting
Input Voltage (VCC) — 10 V to 20 V
High-Side Bootstrap Voltage Rating — 650 V
Peak Source Current (typ.) — 0.29 A
Peak Sink Current (typ.) — 0.7 A
Undervoltage Lockout (UVLO) — Yes (VCC and VB)
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay ns]
Rise / Fall Time (typ.) — [DATA_NEEDED: tr/tf ns]
Suhu Operasi — -40 C to +125 C
Aras MSL — 1

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