2ED21834S06JXUMA1 vs 2ED2108S06FXUMA1 Perbandingan

Perbandingan bersamaan detil 2ED21834S06JXUMA1 dari Infineon dan 2ED2108S06FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED21834S06JXUMA1 2ED2108S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Configuration Half-bridge (high-side + low-side) —
Maximum Offset Voltage (VBS) 650 V —
Typical Sink Current 2.5 A —
Typical Source Current 2.5 A —
Input Logic Non-Inverting —
Integrated Bootstrap Diode Yes Yes
Technology SOI (Silicon-On-Insulator) high-voltage —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Paket PG-DSO-14-49 (DSO-14) PG-DSO-8-53 (DSO-8)
Jumlah Pin 14 —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -40 °C to +125 °C —
Status RoHS Compliant Compliant
Standard Reel Quantity 3000 —
Driver Configuration — Half-Bridge
Number of Drivers — 1
Gate Type — N-Channel MOSFET, IGBT
Jumlah Output — 2 (high-side + low-side)
Logic Input — Non-Inverting
Input Voltage (VCC) — 10 V to 20 V
High-Side Bootstrap Voltage Rating — 650 V
Peak Source Current (typ.) — 0.29 A
Peak Sink Current (typ.) — 0.7 A
Undervoltage Lockout (UVLO) — Yes (VCC and VB)
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay ns]
Rise / Fall Time (typ.) — [DATA_NEEDED: tr/tf ns]
Suhu Kerja — -40 C to +125 C
Level MSL — 1

Spek dan Sumber

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