2EDL8034G4CXTMA1 vs 1EDN7146UXTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDL8034G4CXTMA1 disebabkan oleh Infineon dan 1EDN7146UXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 2EDL8034G4CXTMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Driver Type | Half-Bridge (High-Side / Low-Side) | Single-channel high-side TDI gate driver |
| Configuration | Non-Inverting | — |
| Bootstrap Voltage (Max) | 120 V | — |
| Peak Source Current | 3 A | — |
| Peak Sink Current | 4 A | — |
| Bilangan Output | 2 | — |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | — |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | — |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | — |
| Input Logic Compatibility | 3.3 V / 5 V | — |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | — |
| UVLO Protection | Yes (VCC and VBS) | — |
| Isolation Type | Junction-isolated (level-shifted) | — |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | — |
| Suhu Hubungan Operasi | -40 C to +125 C | — |
| Kemasan | PG-VDSON-10-2 (DSN-10) with exposed pad | PG-VSON-1 (6-pin with exposed pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| Aras MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Masa Pertambahan | — | [DATA_NEEDED: typical rise time ns] |
| Masa jatuh | — | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Gambaran Suhu Operasi | — | -40C to +125C |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| Status RoHS | — | Compliant |
| Topology Support | — | Half-bridge, low-side, high-side |