2EDL8034G4CXTMA1 vs 1EDN7146UXTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2EDL8034G4CXTMA1 sa pamamagitan ng Infineon at 1EDN7146UXTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2EDL8034G4CXTMA1 2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 ✓ Nakahanda
Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2EDL8034G4CXTMA1 1EDN7146UXTSA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Driver Type Half-Bridge (High-Side / Low-Side) Single-channel high-side TDI gate driver
Configuration Non-Inverting —
Bootstrap Voltage (Max) 120 V —
Peak Source Current 3 A —
Peak Sink Current 4 A —
Bilang ng Outputs 2 —
Rise Time (Typical) [DATA_NEEDED: rise time ns] —
Fall Time (Typical) [DATA_NEEDED: fall time ns] —
Propagation Delay (Typical) [DATA_NEEDED: propagation delay ns] —
Input Logic Compatibility 3.3 V / 5 V —
VCC Supply Voltage [DATA_NEEDED: VCC range V] —
UVLO Protection Yes (VCC and VBS) —
Isolation Type Junction-isolated (level-shifted) —
ESD Rating (HBM) [DATA_NEEDED: ESD HBM kV] —
Temperature ng Junction na Operasyon -40 C to +125 C —
Packhaging PG-VDSON-10-2 (DSN-10) with exposed pad PG-VSON-1 (6-pin with exposed pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Lead-Free / RoHS Yes (per Infineon product page) —
Level ng MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
Oras ng Pagtaas — [DATA_NEEDED: typical rise time ns]
Time ng Pagbaba — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
Hanay ng Temperature na Operasyon — -40C to +125C
Target Transistor — GaN SG HEMT or power MOSFET
Tindminan RoHS — Compliant
Topology Support — Half-bridge, low-side, high-side

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