2N7002H6327XTSA2 vs 2N7002LT1G Perbandingan

Perbandingan bersamaan detil 2N7002H6327XTSA2 dari Infineon dan 2N7002LT1G dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2N7002H6327XTSA2 2N7002LT1G
Merek Infineon onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS (Planar) MOSFET
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 300 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
On-State Resistance (RDS(on)) 3 ohm max @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Rentang Suhu Kerja -55C to +150C (Tj) [DATA_NEEDED: operating temperature range]
Paket PG-SOT23 (SOT-23-3) SOT-23-3 (TO-236)
Tipe Mounting Surface Mount Surface Mount
Channel Mode Enhancement Enhancement Mode
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Lead-Free Yes —
Qualification Industrial / Commercial Grade —
Polarity — N-Channel
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
Configuration — Single FET
Jumlah Pin — 3
Kategori — Small Signal MOSFET
Manufacturer — onsemi (ON Semiconductor)
Lead Finish — [DATA_NEEDED: lead finish/plating]
Packaging — [DATA_NEEDED: packaging type]

Spek dan Sumber

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