2N7002H6327XTSA2 vs 2N7002LT1G Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2N7002H6327XTSA2 disebabkan oleh Infineon dan 2N7002LT1G disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2N7002H6327XTSA2 2N7002LT1G
Merek Infineon onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS (Planar) MOSFET
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 300 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
On-State Resistance (RDS(on)) 3 ohm max @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Gambaran Suhu Operasi -55C to +150C (Tj) [DATA_NEEDED: operating temperature range]
Kemasan PG-SOT23 (SOT-23-3) SOT-23-3 (TO-236)
Jenis Pemasangan Surface Mount Surface Mount
Channel Mode Enhancement Enhancement Mode
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Lead-Free Yes —
Qualification Industrial / Commercial Grade —
Polarity — N-Channel
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
Configuration — Single FET
Bilangan Pin — 3
Kategori — Small Signal MOSFET
Manufacturer — onsemi (ON Semiconductor)
Lead Finish — [DATA_NEEDED: lead finish/plating]
Packaging — [DATA_NEEDED: packaging type]

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